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Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

IEEE transactions on electron devices, 2022-11, Vol.69 (11), p.1-6

2022

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Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers

IEEE transactions on electron devices, 2019-10, Vol.66 (10), p.4156-4163

2019

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Thermal response and correlation between mobility and kink effect in GaN HEMTs

Microelectronic engineering, 2020-01, Vol.219, p.111148, Article 111148

2020

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Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

IEEE transactions on microwave theory and techniques, 2022-01, Vol.70 (1), p.444-452

2022

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AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Journal of applied physics, 2010, Vol.107 (2), p.024504-024504-4

2010

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Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

Microelectronic engineering, 2019-03, Vol.209, p.53-59

2019

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ESD mm-Wave-Circuit Protection: 3-dB Couplers

IEEE transactions on electron devices, 2021-12, Vol.68 (12), p.5989-5994

2021

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On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

Semiconductor science and technology, 2019-07, Vol.34 (7), p.75014

2019

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On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

IEEE microwave and wireless components letters, 2018-09, Vol.28 (9), p.831-833

2018

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Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Current Applied Physics, 2017, 17(12), , pp.1601-1608

2017

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Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2284-2291

2017

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Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Applied physics letters, 2018-07, Vol.113 (4)

2018

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Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

Applied physics letters, 2014-02, Vol.104 (7)

2014

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

IEEE electron device letters, 2010-01, Vol.31 (1), p.11-13

2010

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Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Nanotechnology, 2020-10, Vol.31 (40), p.405204-405204

2020

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Neutron Irradiation Effects on the Electrical Properties of Previously Electrically Stressed AlInN/GaN HEMTs

IEEE transactions on nuclear science, 2019-05, Vol.66 (5), p.810-819

2019

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Low-loss broadband (DC to 220 GHz) S-CPW to S-CPS transition for S-CPS coplanar probing

Electronics letters, 2019-10, Vol.55 (21), p.1137-1139

2019

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GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Semiconductor science and technology, 2018-09, Vol.33 (9), p.95016

2018

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Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

Journal of applied physics, 2014-11, Vol.116 (18)

2014

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InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

IEEE electron device letters, 2009-11, Vol.30 (11), p.1131-1133

2009

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Searching for THz Gunn oscillations in GaN planar nanodiodes

Journal of applied physics, 2012-06, Vol.111 (11), p.113705-113705-9

2012

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Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Microelectronics and reliability, 2023-11, Vol.150, p.115156, Article 115156

2023

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Terahertz detection by GaN/AlGaN transistors

Electronics letters, 2006, Vol.42 (23), p.1342-1344

2006

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Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

Solid-state electronics, 2015-02, Vol.104 (Feb), p.79-85

2015

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Self-Heating Characterization of SiGe:C HBTs by Extracting Thermal Impedances

IEEE electron device letters, 2012-12, Vol.33 (12), p.1762-1764

2012

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Trapping Effect in AlInN/GaN HEMTs: A Study Based on Photoionization and Pulsed Electrical Measurements

Measurement of Self-Heating Temperature in AlGaN/GaN HEMTs by Using Cerium Oxide Micro-Raman Thermometers

Thermal response and correlation between mobility and kink effect in GaN HEMTs

Load-Pull Setup Development at 185 GHz for On-Wafer Characterization of SiGe HBT in BiCMOS 55 nm Technology

AlGaN/GaN high electron mobility transistors as a voltage-tunable room temperature terahertz sources

Thermal response for intermodulation distortion components of GaN HEMT for low and high frequency applications

ESD mm-Wave-Circuit Protection: 3-dB Couplers

On the correlation between intermodulation distortion and RF transconductance for microwave GaN HEMT

On-Wafer Series-Through Broadband Measurement of Sub-fF55-nm MOS RF Voltage-Tunable Capacitors

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Influence of Neutron Irradiation on Electron Traps Induced by NGB Stress in AlInN/GaN HEMTs

Voltage controlled sub-THz detection with gated planar asymmetric nanochannels

Optimized V-shape design of GaN nanodiodes for the generation of Gunn oscillations

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

Trap-related frequency dispersion of zero-bias microwave responsivity at low temperature in GaN-based self-switching diodes

Neutron Irradiation Effects on the Electrical Properties of Previously Electrically Stressed AlInN/GaN HEMTs

Low-loss broadband (DC to 220 GHz) S-CPW to S-CPS transition for S-CPS coplanar probing

GaN nanodiode arrays with improved design for zero-bias sub-THz detection

Metal-oxide-semiconductor capacitors and Schottky diodes studied with scanning microwave microscopy at 18 GHz

InAlN/GaN MOSHEMT With Self-Aligned Thermally Generated Oxide Recess

Searching for THz Gunn oscillations in GaN planar nanodiodes

Time-resolved self-heating temperature measurements of AlInN/GaN HEMTs using CeO2 Raman micro-thermometers

Terahertz detection by GaN/AlGaN transistors

Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

Self-Heating Characterization of SiGe:C HBTs by Extracting Thermal Impedances

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