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Photographic diagnosis of crystalline silicon solar cells utilizing electroluminescence

Applied physics. A, Materials science & processing, 2009-07, Vol.96 (1), p.189-196

2009

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Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

Applied physics letters, 2010-05, Vol.96 (20)

2010

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Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

Applied physics letters, 2005-06, Vol.86 (26), p.262108-262108-3

2005

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Analytic findings in the electroluminescence characterization of crystalline silicon solar cells

Journal of applied physics, 2007-01, Vol.101 (2)

2007

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Low-temperature photoluminescence of 8H-SiC homoepitaxial layer

Japanese Journal of Applied Physics, 2016-02, Vol.55 (2), p.20303

2016

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Nonvolatile Flash Memory Based on Biologically Integrated Hierarchical Nanostructures

Langmuir, 2013-10, Vol.29 (40), p.12483-12489

2013

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Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Solar energy materials and solar cells, 2005-01, Vol.85 (3), p.429-436

2005

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Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices

Materials science forum, 2013-01, Vol.740-742, p.695-698

2013

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Surface polarity control to reinforce dopant adhesion in laser doping of textured silicon

Japanese Journal of Applied Physics, 2014-05, Vol.53 (5), p.56501-1-056501-4

2014

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Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Materials science forum, 2012-05, Vol.717-720, p.739-742

2012

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Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs

IEEE transactions on electron devices, 2008-08, Vol.55 (8), p.2013-2020

2008

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Thermal Degradation Under Pulse Operation in Low-Temperature p-Channel Poly-Si Thin-Film Transistors

IEEE transactions on electron devices, 2007-02, Vol.54 (2), p.297-300

2007

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Enhancements of photoluminescence intensity in high-quality floating-zone Si by thermal annealing in vacuum

Japanese Journal of Applied Physics, 2016-11, Vol.55 (11), p.110308

2016

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Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

IEEE electron device letters, 2010-07, Vol.31 (7), p.710-712

2010

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Effect of hydrogen plasma treatment on grain boundaries in polycrystalline silicon solar cell evaluated by laser-beam-induced current

Solar energy materials and solar cells, 2007-01, Vol.91 (1), p.1-5

2007

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Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment

Materials science forum, 2012-05, Vol.717-720, p.881-884

2012

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Improved Electronic Properties of Laser-Doped Emitters by Reducing Surface Roughness

Japanese Journal of Applied Physics, 2012-10, Vol.51 (10), p.10NA15-10NA15-4

2012

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High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication

Nano research, 2014-07, Vol.7 (7), p.998-1006

2014

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Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

IEEE transactions on electron devices, 2015-02, Vol.62 (2), p.324-332

2015

Volltextzugriff (PDF)

Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping Technique

Materials science forum, 2013-01, Vol.740-742, p.541-544

2013

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Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal--Oxide--Semiconductor Field-Effect Transistors on Off-Axis Substrates

Japanese Journal of Applied Physics, 2012-11, Vol.51 (11), p.110201-110201-3

2012

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Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein

Applied physics letters, 2006-01, Vol.88 (2), p.023108-023108-3

2006

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Comprehensive study of electroluminescence in multicrystalline silicon solar cells

Journal of applied physics, 2009-08, Vol.106 (4), p.043717-043717-4

2009

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Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity

Materials science forum, 2012-05, Vol.717-720, p.869-872

2012

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Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node

Japanese Journal of Applied Physics, 2006-01, Vol.45 (1L), p.L1

2006

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Photographic diagnosis of crystalline silicon solar cells utilizing electroluminescence

Removal of near-interface traps at SiO2/4H–SiC (0001) interfaces by phosphorus incorporation

Photographic surveying of minority carrier diffusion length in polycrystalline silicon solar cells by electroluminescence

Analytic findings in the electroluminescence characterization of crystalline silicon solar cells

Low-temperature photoluminescence of 8H-SiC homoepitaxial layer

Nonvolatile Flash Memory Based on Biologically Integrated Hierarchical Nanostructures

Evaluation of temperature characteristics of high-efficiency InGaP/InGaAs/Ge triple-junction solar cells under concentration

Effect of Interfacial Localization of Phosphorus on Electrical Properties and Reliability of 4H-SiC MOS Devices

Surface polarity control to reinforce dopant adhesion in laser doping of textured silicon

Effect of POCl3 Annealing on Reliability of Thermal Oxides Grown on 4H-SiC

Analysis of Anomalous Charge-Pumping Characteristics on 4H-SiC MOSFETs

Thermal Degradation Under Pulse Operation in Low-Temperature p-Channel Poly-Si Thin-Film Transistors

Enhancements of photoluminescence intensity in high-quality floating-zone Si by thermal annealing in vacuum

Improved Inversion Channel Mobility in 4H-SiC MOSFETs on Si Face Utilizing Phosphorus-Doped Gate Oxide

Effect of hydrogen plasma treatment on grain boundaries in polycrystalline silicon solar cell evaluated by laser-beam-induced current

Clearance of 4H-SiC Sub-Trench in Hot Chlorine Treatment

Improved Electronic Properties of Laser-Doped Emitters by Reducing Surface Roughness

High-precision transfer-printing and integration of vertically oriented semiconductor arrays for flexible device fabrication

Threshold Voltage Instability in 4H-SiC MOSFETs With Phosphorus-Doped and Nitrided Gate Oxides

Characterization of POCl3-Annealed 4H-Sic Mosfets by Charge Pumping Technique

Origin of Anisotropic Electrical Properties of 4H-SiC Trench Metal--Oxide--Semiconductor Field-Effect Transistors on Off-Axis Substrates

Electron confinement in a metal nanodot monolayer embedded in silicon dioxide produced using ferritin protein

Comprehensive study of electroluminescence in multicrystalline silicon solar cells

Curious Relationship between Orientation of SiC Substrates and Chemical Reactivity

Floating Nanodot Gate Memory Devices Based on Biomineralized Inorganic Nanodot Array as a Storage Node

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