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High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor

IEEE transactions on electron devices, 2001-10, Vol.48 (10), p.2221-2227

2001

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A 2.5 kV Isolation 35 kV/us CMR 250 Mbps Digital Isolator in Standard CMOS With a Small Transformer Driving Technique

IEEE journal of solid-state circuits, 2012-02, Vol.47 (2), p.435-443

2012

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A signal-processing CMOS image sensor using a simple analog operation

IEEE journal of solid-state circuits, 2003-01, Vol.38 (1), p.101-106

2003

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Matching characteristics of metal resistors

2011 IEEE ICMTS International Conference on Microelectronic Test Structures, 2011, p.189-193

2011

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Size-dependent radiative decay time of confined excitons in CuCl microcrystals

Solid state communications, 1990, Vol.73 (4), p.271-274

1990

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A 1/3-in 1.3 M-pixel single-layer electrode CCD with a high-frame-rate skip mode

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1915-1921

2001

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A signal-processing CMOS image sensor using a simple analog operation

2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177), 2001, p.98-99

2001

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Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

IEEE transactions on electron devices, 2000-08, Vol.47 (8), p.1566-1572

2000

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Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

IEEE transactions on electron devices, 2000-09, Vol.47 (9), p.1700-1706

2000

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A 30 frames/s 2/3-in 1.3 M-pixel progressive scan IT-CCD image sensor

IEEE transactions on electron devices, 2001-09, Vol.48 (9), p.1922-1928, Article 1922

2001

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A 1/2-in 1.3 M-pixel progressive-scan IT-CCD for digital still camera applications

IEEE transactions on electron devices, 2001-02, Vol.48 (2), p.222-230

2001

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On-chip vertically coiled solenoid inductors and transformers for RF SoC using 90nm CMOS interconnect technology

2011 IEEE Radio Frequency Integrated Circuits Symposium, 2011, p.1-4

2011

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A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-μm gap single-layer poly-Si electrodes

IEEE journal of solid-state circuits, 1999-12, Vol.34 (12), p.1835-1842

1999

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A 1/3-inch 1.3Mpixel single-layer electrode CCD with a high-frame-rate skip mode

Digest of technical papers - IEEE International Solid-State Circuits Conference, 2000

2000

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Case study on evaluating the groundwater seepage flow by using a 3D ground model prepared from soil borehole and GIS data

Computer Methods and Recent Advances in Geomechanics : Proceedings of the 14th International Conference of International Association for Computer Methods and Recent Advances in Geomechanics, 2014 (IACMAG 2014), 2015, p.841-845

2015

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Optical limitations to cell size reduction in IT-CCD image sensors

IEEE transactions on electron devices, 1997-10, Vol.44 (10), p.1599-1603

1997

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A structure of millimeter-wave on-chip transmission line using redistributed copper wire and ground shield

2012 IEEE Radio Frequency Integrated Circuits Symposium, 2012, p.363-366

2012

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A 1/4-inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode

IEEE transactions on electron devices, 1995-10, Vol.42 (10), p.1783-1788

1995

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Novel scalable TDDB model for large-area MIM decoupling capacitors in high performance LSIs

2009 IEEE International Interconnect Technology Conference, 2009, p.191-194

2009

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Size-dependent homogeneous broadening of confined excitons in CuCl microcrystals

Journal of luminescence, 1991, Vol.48, p.704-708

1991

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A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-/spl mu/m gap single-layer poly-Si electrodes

IEEE journal of solid-state circuits, 1999-12, Vol.34 (12), p.1835-1842

1999

Volltextzugriff (PDF)

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing0.25-mu m gap single-layer poly-Si electrodes

IEEE journal of solid-state circuits, 1999-12, Vol.34 (12), p.1835-1842

1999

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High sensitivity and no-cross-talk pixel technology for embedded CMOS image sensor

International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138), 2000, p.701-704

2000

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Development of a CMOS imager LSI with focal-plane motion detectors

Electronics & communications in Japan. Part 2, Electronics, 2001-09, Vol.84 (9), p.28-35

2001

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Optimization of metal layers and substrate loss for the 3D solenoid structure inductors

2012 Asia Pacific Microwave Conference Proceedings, 2012, p.1268-1270

2012

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High-sensitivity and no-crosstalk pixel technology for embedded CMOS image sensor

A 2.5 kV Isolation 35 kV/us CMR 250 Mbps Digital Isolator in Standard CMOS With a Small Transformer Driving Technique

A signal-processing CMOS image sensor using a simple analog operation

Matching characteristics of metal resistors

Size-dependent radiative decay time of confined excitons in CuCl microcrystals

A 1/3-in 1.3 M-pixel single-layer electrode CCD with a high-frame-rate skip mode

A signal-processing CMOS image sensor using a simple analog operation

Technologies to improve photo-sensitivity and reduce VOD shutter voltage for CCD image sensors

Dynamic range improvement by narrow-channel effect suppression and smear reduction technologies in small pixel IT-CCD image sensors

A 30 frames/s 2/3-in 1.3 M-pixel progressive scan IT-CCD image sensor

A 1/2-in 1.3 M-pixel progressive-scan IT-CCD for digital still camera applications

On-chip vertically coiled solenoid inductors and transformers for RF SoC using 90nm CMOS interconnect technology

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-μm gap single-layer poly-Si electrodes

A 1/3-inch 1.3Mpixel single-layer electrode CCD with a high-frame-rate skip mode

Case study on evaluating the groundwater seepage flow by using a 3D ground model prepared from soil borehole and GIS data

Optical limitations to cell size reduction in IT-CCD image sensors

A structure of millimeter-wave on-chip transmission line using redistributed copper wire and ground shield

A 1/4-inch 380 k pixel IT-CCD image sensor employing gate-assisted punchthrough read-out mode

Novel scalable TDDB model for large-area MIM decoupling capacitors in high performance LSIs

Size-dependent homogeneous broadening of confined excitons in CuCl microcrystals

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing 0.25-/spl mu/m gap single-layer poly-Si electrodes

A 1/2-in, 1.3 M-pixel progressive-scan CCD image sensor employing0.25-mu m gap single-layer poly-Si electrodes

High sensitivity and no-cross-talk pixel technology for embedded CMOS image sensor

Development of a CMOS imager LSI with focal-plane motion detectors

Optimization of metal layers and substrate loss for the 3D solenoid structure inductors

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