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Infants' perceptions of cooperation between a human and robot

Infant and child development, 2020-03, Vol.29 (2), p.n/a

2020

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The development of gaze behaviors in response to biological motion displays

Infant behavior & development, 2015-02, Vol.38, p.97-106

2015

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Effect of Presentation Position on the Visibility of Dynamic Signs

Proceedings of the International Display Workshops, 2022-12, p.663

2022

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Epitaxial growth mechanism of high-crystallinity lanthanum hexaboride (001) thin films on silicon (001) by electron beam deposition

Applied physics express, 2020-05, Vol.13 (5), p.55504

2020

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Standardization of “Dynamic Sign” for Comfort and Safe Society

Proceedings of the 20th Congress of the International Ergonomics Association (IEA 2018), p.147-151

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Standardization of ergonomics requirements for ‘Dynamics Sign’ in ISO

Proceedings of the International Display Workshops, 2019-11, p.1181

2019

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Standardization of ergonomics requirements for ‘Dynamics Sign’ in ISO

Proceedings of the International Display Workshops, 2019-11, p.1181

2019

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Improvement in Electrical Properties at an n-GaAs/n-GaAs Regrown Interface Using Ammonium Sulfide Treatment

Japanese Journal of Applied Physics, 1998-01, Vol.37 (1R), p.10

1998

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Selective growth mechanism of GaAs in metalorganic molecular beam epitaxy

Journal of crystal growth, 1991-05, Vol.112 (1), p.1-6

1991

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Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

Journal of applied physics, 1988-11, Vol.64 (9), p.4692-4695

1988

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A prelude to the We-mode Science

The Proceedings of the Annual Convention of the Japanese Psychological Association, 2015-09, Vol.79, p.SS-073-SS-073

2015

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Dynamic Signs: Field Test to Install Signs Around the Stairs

Proceedings of the 21st Congress of the International Ergonomics Association (IEA 2021), p.762-769

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Dynamic Signs: Multiple Attributes Determining Visibility

Proceedings of the 21st Congress of the International Ergonomics Association (IEA 2021), p.783-790

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Formation of an [formula omitted] regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma

Journal of crystal growth, 1997-05, Vol.175-176, p.441-446

1997

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Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors

Journal of crystal growth, 1997-12, Vol.182 (3), p.255-265

1997

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Vibrational modes of carbon-aluminum complexes in Al x Ga1− x As grown by metalorganic molecular beam epitaxy

Applied physics letters, 1991-10, Vol.59 (15), p.1881-1883

1991

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Delay time analysis of AlGaAs/In sub(x)Ga sub(1-x)As (0.15 less than or equal to x less than or equal to 0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed in-surface segregation conditions

Solid-state electronics, 1998-11, Vol.42 (11), p.1911-1916

1998

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Performance of a p-channel heterojunction FET with p super(+)-GaAs selectively grown contact layers for GaAs complementary ICs

Solid-state electronics, 1998-06, Vol.42 (6), p.1049-1055

1998

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Delay time analysis of AlGaAs/InxGa1−xAs (0.15≤×≤0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed In-surface segregation conditions

Solid-state electronics, 1998-11, Vol.42 (11), p.1911-1916

1998

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Delay time analysis of AlGaAs/In xGa 1− xAs (0.15≤×≤0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed In-surface segregation conditions

Solid-state electronics, 1998, Vol.42 (11), p.1911-1916

1998

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0.1- mu m p super(+)-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques

IEEE transactions on electron devices, 1998-06, Vol.45 (6), p.1183-1188

1998

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Performance of a p-channel heterojunction fet with p +-GaAs selectively grown contact layers for GaAs complementary ICs

Solid-state electronics, 1998-06, Vol.42 (6), p.1049-1055

1998

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Ohmic contacts to p-GAaS with p+/p regrown structures formed by metalorganic molecular beam epitaxy

Journal of applied physics, 1991-06, Vol.69 (11), p.7939-7941

1991

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High purity GaAs and Al xGa 1-xAs grown by metalorganic molecular beam epitaxy

Journal of crystal growth, 1990, Vol.102 (4), p.814-818

1990

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High purity GaAs and AlxGa1-xAs grown by metalorganic molecular beam epitaxy

Journal of crystal growth, 1990-06, Vol.102 (4), p.814-818

1990

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Infants' perceptions of cooperation between a human and robot

The development of gaze behaviors in response to biological motion displays

Effect of Presentation Position on the Visibility of Dynamic Signs

Epitaxial growth mechanism of high-crystallinity lanthanum hexaboride (001) thin films on silicon (001) by electron beam deposition

Standardization of “Dynamic Sign” for Comfort and Safe Society

Standardization of ergonomics requirements for ‘Dynamics Sign’ in ISO

Standardization of ergonomics requirements for ‘Dynamics Sign’ in ISO

Improvement in Electrical Properties at an n-GaAs/n-GaAs Regrown Interface Using Ammonium Sulfide Treatment

Selective growth mechanism of GaAs in metalorganic molecular beam epitaxy

Heavily Si-doped GaAs grown by metalorganic chemical vapor deposition

A prelude to the We-mode Science

Dynamic Signs: Field Test to Install Signs Around the Stairs

Dynamic Signs: Multiple Attributes Determining Visibility

Formation of an [formula omitted] regrowth interface without carrier depletion using electron cyclotron resonance hydrogen plasma

Selective-area metalorganic molecular beam epitaxy of GaAs using metalorganic chloride gallium precursors

Vibrational modes of carbon-aluminum complexes in Al x Ga1− x As grown by metalorganic molecular beam epitaxy

Delay time analysis of AlGaAs/In sub(x)Ga sub(1-x)As (0.15 less than or equal to x less than or equal to 0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed in-surface segregation conditions

Performance of a p-channel heterojunction FET with p super(+)-GaAs selectively grown contact layers for GaAs complementary ICs

Delay time analysis of AlGaAs/InxGa1−xAs (0.15≤×≤0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed In-surface segregation conditions

Delay time analysis of AlGaAs/In xGa 1− xAs (0.15≤×≤0.45) pseudomorphic HJFETs with InGaAs channel grown under suppressed In-surface segregation conditions

0.1- mu m p super(+)-GaAs gate HJFET's fabricated using two-step dry-etching and selective MOMBE growth techniques

Performance of a p-channel heterojunction fet with p +-GaAs selectively grown contact layers for GaAs complementary ICs

Ohmic contacts to p-GAaS with p+/p regrown structures formed by metalorganic molecular beam epitaxy

High purity GaAs and Al xGa 1-xAs grown by metalorganic molecular beam epitaxy

High purity GaAs and AlxGa1-xAs grown by metalorganic molecular beam epitaxy

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