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Direct observation of sintering mechanics of a single grain boundary

Acta materialia, 2012-01, Vol.60 (2), p.507-516

2012

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Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs

IEEE transactions on electron devices, 2006-11, Vol.53 (11), p.2755-2763

2006

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Effects of Gate Line Width Roughness on Threshold-Voltage Fluctuation Among Short-Channel Transistors at High Drain Voltage

IEEE electron device letters, 2010-03, Vol.31 (3), p.240-242

2010

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Sub-30-nm FUSI CMOS Transistors Fabricated by Simple Method Without Additional CMP Process

IEEE electron device letters, 2008-07, Vol.29 (7), p.765-767

2008

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Demonstration of Logic-Block Performance-Power Gain by 1st Generation Back Side Power Delivery Network for SoC and HPC Applications Beyond 2nm Node

2024 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2024, p.1-2

2024

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Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

2016 IEEE Symposium on VLSI Technology, 2016, p.1-2

2016

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Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint

2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits), 2022, p.369-370

2022

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Direct measurement of effects of shallow-trench isolation on carrier profiles in sub-50 nm N-MOSFETs

Digest of Technical Papers. 2005 Symposium on VLSI Technology, 2005, 2005, p.140-141

2005

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Theory of resonating quantum fluctuations in a fermion system. Resonating Hartree-Fock approximation

Progress of theoretical physics, 1988-09, Vol.80 (3), p.417-432

FUKUTOME, H

1988

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Design of Donor Oligomers To Produce Parallel Spins upon Electron Transfer

Journal of the American Chemical Society, 1995-03, Vol.117 (11), p.3260-3269

1995

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Electron correlations in the ions of Meta-Phenylenebis-carbenes

Synthetic metals, 1997-03, Vol.85 (1), p.1769-1770

1997

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The SDW-CDW phase transition and quantum fluctuations in the one dimensional extended Hubbard model

Synthetic metals, 1995-03, Vol.69 (1), p.679-680

1995

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Hartree-Fock calculations for the electronic and lattice structures in heavily sodium doped polyacetylene

Synthetic metals, 1997-03, Vol.85 (1), p.1061-1064

1997

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New method of photonic band calculation and its application

Journal of luminescence, 1997-06, Vol.72, p.867-868

1997

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Ionic state of meta-triphenyl-dicarbene

Synthetic metals, 1995-04, Vol.71 (1), p.1785-1786

1995

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Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2004-01, Vol.22 (1), p.358-363

2004

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Application of the resonating Hartree-Bogoliubov theory to a description of multiple shapes coexistence in nuclei

Journal of physics. G, Nuclear and particle physics, 1992-02, Vol.18 (2), p.317-328

1992

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Halfon excitations connecting SDW and CDW

Synthetic metals, 1993-04, Vol.56 (2), p.2761-2766

1993

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Quantum fluctuations in the one dimensional Hubbard model with a less than half filling

Synthetic metals, 1995-03, Vol.69 (1), p.709-710

1995

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Electronic and lattice structures in potassium doped stage-1 polyacetylene

Synthetic metals, 1995-03, Vol.69 (1), p.645-646

1995

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Theory of excitations in a Fermion system with large quantum fluctuations: resonating random phase approximation

Progress of theoretical physics, 1989-02, Vol.81 (2), p.342-359

FUKUTOME, H

1989

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The resonating SDW solitons and breathers in the one-dimensional Hubbard model

Synthetic metals, 1991-06, Vol.43 (3), p.3705-3708

1991

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3 dimensional scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond

2013 Symposium on VLSI Technology, 2013, p.T88-T89

2013

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Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy

Applied physics letters, 2002-09, Vol.81 (13), p.2475-2477

2002

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Study of Gate Length Dependence of Two-dimensional Carrier Profile in N-FET by Scanning Tunneling Microscopy

Japanese Journal of Applied Physics, 2005-04, Vol.44 (4S), p.2395

2005

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Direct observation of sintering mechanics of a single grain boundary

Direct Evaluation of Gate Line Edge Roughness Impact on Extension Profiles in Sub-50-nm n-MOSFETs

Effects of Gate Line Width Roughness on Threshold-Voltage Fluctuation Among Short-Channel Transistors at High Drain Voltage

Sub-30-nm FUSI CMOS Transistors Fabricated by Simple Method Without Additional CMP Process

Demonstration of Logic-Block Performance-Power Gain by 1st Generation Back Side Power Delivery Network for SoC and HPC Applications Beyond 2nm Node

Si FinFET based 10nm technology with multi Vt gate stack for low power and high performance applications

Comprehensive Feasibility Study of Single FIN Transistors for Scaling Both Switching Energy and Device Footprint

Direct measurement of effects of shallow-trench isolation on carrier profiles in sub-50 nm N-MOSFETs

Theory of resonating quantum fluctuations in a fermion system. Resonating Hartree-Fock approximation

Design of Donor Oligomers To Produce Parallel Spins upon Electron Transfer

Electron correlations in the ions of Meta-Phenylenebis-carbenes

The SDW-CDW phase transition and quantum fluctuations in the one dimensional extended Hubbard model

Hartree-Fock calculations for the electronic and lattice structures in heavily sodium doped polyacetylene

New method of photonic band calculation and its application

Ionic state of meta-triphenyl-dicarbene

Two-dimensional characterization of carrier concentration in metal-oxide-semiconductor field-effect transistors with the use of scanning tunneling microscopy

Application of the resonating Hartree-Bogoliubov theory to a description of multiple shapes coexistence in nuclei

Halfon excitations connecting SDW and CDW

Quantum fluctuations in the one dimensional Hubbard model with a less than half filling

Electronic and lattice structures in potassium doped stage-1 polyacetylene

Theory of excitations in a Fermion system with large quantum fluctuations: resonating random phase approximation

The resonating SDW solitons and breathers in the one-dimensional Hubbard model

3 dimensional scaling extensibility on epitaxial source drain strain technology toward Fin FET and beyond

Visualization of 0.1-μm-metal-oxide-semiconductor field-effect transistors by cross-sectional scanning tunneling microscopy

Study of Gate Length Dependence of Two-dimensional Carrier Profile in N-FET by Scanning Tunneling Microscopy

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