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Energy-dependent anisotropic deformation of colloidal silica particles under MeV Au irradiation

Applied physics letters, 2001-02, Vol.78 (7), p.910-912

2001

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In situ characterization of thin film growth: Boron nitride on silicon

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001-07, Vol.19 (4), p.2017-2024

Fukarek, W.

2001

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Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation

Applied physics letters, 2002-01, Vol.80 (1), p.55-57

2002

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Density and structural changes in SiC after amorphization and annealing

Applied physics letters, 1997-06, Vol.70 (26), p.3531-3533

1997

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Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection

Surface & coatings technology, 1998-08, Vol.106 (2), p.205-208

1998

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Cavities in helium implanted and annealed silicon characterized by spectroscopic ellipsometry

Journal of applied physics, 1999-10, Vol.86 (8), p.4160-4165

1999

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Stress relaxation during annealing of boron nitride films

Thin solid films, 2001-06, Vol.389 (1), p.173-179

2001

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Anisotropic deformation of colloidal particles under MeV ion irradiation

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2001-04, Vol.175, p.350-356

2001

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Stress relaxation and phase stability of cubic boron nitride films during ion post implantation and annealing

Thin solid films, 2002-04, Vol.408 (1), p.155-159

2002

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Ion flux, ion energy distribution and neutral density in an inductively coupled argon discharge

Plasma sources science & technology, 2000-11, Vol.9 (4), p.568-573

2000

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Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C:B)

Diamond and related materials, 1998-02, Vol.7 (2), p.472-476

1998

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Investigation on stress evolution in boron nitride films

Surface & coatings technology, 2000-06, Vol.128, p.292-297

2000

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An instrument for in-situ stress measurement in thin films during growth

Surface & coatings technology, 2000-06, Vol.128, p.474-478

2000

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In-situ stress diagnostics

Surface & coatings technology, 2001-07, Vol.142, p.868-873

2001

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Role of hydrogen ions in plasma-enhanced chemical vapor deposition of hydrocarbon films, investigated by in situ ellipsometry

Applied physics letters, 1995-03, Vol.66 (11), p.1322-1324

1995

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Relation between stress in cubic boron nitride films and the in-plane TO phonon energy

Diamond and related materials, 2002-08, Vol.11 (8), p.1532-1536

2002

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Effects of titanium and aluminum incorporations on the structure of boron nitride thin films

Diamond and related materials, 1999-03, Vol.8 (2), p.386-390

1999

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Hydrogen and disorder in diamond-like carbon

Diamond and related materials, 2001-03, Vol.10 (3), p.965-969

2001

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Depth profiles of Argon incorporated into Boron Nitride films during preparation and their temperature dependent evolution

Diamond and related materials, 2003, Vol.12 (1), p.37-46

2003

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Phase identification of boron nitride thin films by polarized infrared reflection spectroscopy

Applied physics letters, 1996-07, Vol.69 (1), p.46-48

1996

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Composite germanium/C:H films prepared by DC unbalanced magnetron sputtering

Thin solid films, 1999-08, Vol.351 (1-2), p.151-157

1999

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Damage in silicon carbide induced by Rutherford backscattering analysis

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1998-08, Vol.142 (4), p.561-570

1998

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A novel setup for spectroscopic ellipsometry using an acousto‐optic tuneable filter

Review of scientific instruments, 1995-06, Vol.66 (6), p.3545-3550

1995

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Layered growth of boron nitride thin films

Thin solid films, 1997, Vol.305 (1), p.172-184

1997

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Application of dynamic in situ ellipsometry to the deposition of tin-doped indium oxide films by reactive direct-current magnetron sputtering

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1994-03, Vol.12 (2), p.523-528

1994

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Energy-dependent anisotropic deformation of colloidal silica particles under MeV Au irradiation

In situ characterization of thin film growth: Boron nitride on silicon

Growth of low-stress cubic boron nitride films by simultaneous medium-energy ion implantation

Density and structural changes in SiC after amorphization and annealing

Investigation of d.c.-reactive magnetron-sputtered AlN thin films by electron microprobe analysis, X-ray photoelectron spectroscopy and polarised infra-red reflection

Cavities in helium implanted and annealed silicon characterized by spectroscopic ellipsometry

Stress relaxation during annealing of boron nitride films

Anisotropic deformation of colloidal particles under MeV ion irradiation

Stress relaxation and phase stability of cubic boron nitride films during ion post implantation and annealing

Ion flux, ion energy distribution and neutral density in an inductively coupled argon discharge

Electrical and optical properties of boronated tetrahedrally bonded amorphous carbon (ta-C:B)

Investigation on stress evolution in boron nitride films

An instrument for in-situ stress measurement in thin films during growth

In-situ stress diagnostics

Role of hydrogen ions in plasma-enhanced chemical vapor deposition of hydrocarbon films, investigated by in situ ellipsometry

Relation between stress in cubic boron nitride films and the in-plane TO phonon energy

Effects of titanium and aluminum incorporations on the structure of boron nitride thin films

Hydrogen and disorder in diamond-like carbon

Depth profiles of Argon incorporated into Boron Nitride films during preparation and their temperature dependent evolution

Phase identification of boron nitride thin films by polarized infrared reflection spectroscopy

Composite germanium/C:H films prepared by DC unbalanced magnetron sputtering

Damage in silicon carbide induced by Rutherford backscattering analysis

A novel setup for spectroscopic ellipsometry using an acousto‐optic tuneable filter

Layered growth of boron nitride thin films

Application of dynamic in situ ellipsometry to the deposition of tin-doped indium oxide films by reactive direct-current magnetron sputtering

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