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Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

Journal of applied physics, 2019-08, Vol.126 (7)

2019

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Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal

Microelectronics and reliability, 2009-04, Vol.49 (4), p.357-364

2009

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High-Speed and High-Reliability InP-Based HBTs With a Novel Emitter

IEEE transactions on electron devices, 2010-02, Vol.57 (2), p.373-379

2010

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IEEE_Xplore

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

Microelectronics and reliability, 2002, Vol.42 (1), p.47-52

2002

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Highly reliable InP-based HBTs with a ledge structure operating at high current density

Electronics & Communications in Japan. Part 2, Electronics, 2007-04, Vol.90 (4), p.1-8

2007

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Reliability of InP-based HBTs at High Current Density

MRS proceedings, 2009, Vol.1195 (1), p.143-154, Article 1195-B04-01

Fukai, Yoshino

2009

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Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition

Applied physics letters, 1990-09, Vol.57 (12), p.1209-1211

1990

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Electron velocity overshoot effect in collector depletion layers on InP/InGaAs heterojunction bipolar transistors

Japanese Journal of Applied Physics, 1992-06, Vol.31 (6B), p.L768-L770

1992

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Electrical Characterization of InGaP/GaAs Heterointerfaces Grown by Metalorganic Chemical Vapor Deposition

Japanese Journal of Applied Physics, 1998-11, Vol.37 (11A), p.L1288

1998

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0.25-\mbox{$\mu$m}-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure

Jpn J Appl Phys, 2010-04, Vol.49 (4), p.04DF02-04DF02-5

2010

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0.25-µm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure

Japanese Journal of Applied Physics, 2010-04, Vol.49 (4S), p.4

2010

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Saturation of phase coherence length in GaAs/AlGaAs on-facet quantum wires

Applied physics letters, 1990-05, Vol.56 (21), p.2123-2125

1990

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Reflection and refraction of ballistic electrons through different carrier concentration regions

Applied physics letters, 1992-01, Vol.60 (1), p.106-108

1992

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Electroluminescence of ballistic and phonon emitting electrons in the p-type base of AlGaAs/GaAs HBT structures

Japanese Journal of Applied Physics, 1995, Vol.34 (2B), p.1208-1212

1995

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Emitter layer design for high-speed InP HBTs with high reliability

2007 IEEE 19th International Conference on Indium Phosphide & Related Materials, 2007, p.441-442

2007

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IEEE_Xplore

Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs

Microelectronics and reliability, 1999-12, Vol.39 (12), p.1787-1792

1999

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Measuring the junction temperature of AlGaAs/GaAs heterojunction bipolar transistors using electroluminescence

Applied physics letters, 1993-07, Vol.63 (3), p.340-342

1993

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Reliability study on three-dimensional Au/WSiN interconnections for ultra-compact MMICs

Microelectronics and reliability, 1997-10, Vol.37 (10-11), p.1659-1662

1997

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Reliability study on three-dimensional [formula omitted] interconnections for ultra-compact MMICs

Microelectronics and reliability, 1997-10, Vol.37 (10), p.1659-1662

1997

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Electroluminescence measurement of ballistic electron distribution in AlGaAs/GaAs heterojunction bipolar transistor structures with base width modulation

Solid state communications, 1994, Vol.92 (9), p.785-789

1994

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Transition from weak to strong spin-orbit scattering regime in diffusive InGaAs/InAlAs quantum wires

Solid state communications, 1995-06, Vol.94 (9), p.757-761

1995

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Bias acceleration model of drain resistance degradation in InP-based HEMTs

2003 IEEE International Reliability Physics Symposium Proceedings, 2003. 41st Annual, 2003, p.324-328

2003

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IEEE_Xplore

Improvement of InGaP/GaAs Heterointerface Quality by Controlling AsH 3 Flow Conditions

MRS proceedings, 1996, Vol.448, Article 21

1996

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Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection

Surface science, 1992-02, Vol.263 (1), p.253-257

1992

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InP HEMT IC technology for 40 Gbit/s and beyond

25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003, 2003, p.161-164

2003

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IEEE_Xplore

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Improving the electron mobility of polycrystalline InN grown on glass substrates using AlN crystalline orientation layers

Emitter-metal-related degradation in InP-based HBTs operating at high current density and its suppression by refractory metal

High-Speed and High-Reliability InP-Based HBTs With a Novel Emitter

Bias-stress-induced increase in parasitic resistance of InP-based InAlAs/InGaAs HEMTs

Highly reliable InP-based HBTs with a ledge structure operating at high current density

Reliability of InP-based HBTs at High Current Density

Lateral quantum well wires fabricated by selective metalorganic chemical vapor deposition

Electron velocity overshoot effect in collector depletion layers on InP/InGaAs heterojunction bipolar transistors

Electrical Characterization of InGaP/GaAs Heterointerfaces Grown by Metalorganic Chemical Vapor Deposition

0.25-\mbox{$\mu$m}-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure

0.25-µm-Emitter InP Heterojunction Bipolar Transistors with a Thin Ledge Structure

Saturation of phase coherence length in GaAs/AlGaAs on-facet quantum wires

Reflection and refraction of ballistic electrons through different carrier concentration regions

Electroluminescence of ballistic and phonon emitting electrons in the p-type base of AlGaAs/GaAs HBT structures

Emitter layer design for high-speed InP HBTs with high reliability

Threshold voltage shift in 0.1 μm self-aligned-gate GaAs MESFETs under bias stress and related degradation of ultra-high-speed digital ICs

Measuring the junction temperature of AlGaAs/GaAs heterojunction bipolar transistors using electroluminescence

Reliability study on three-dimensional Au/WSiN interconnections for ultra-compact MMICs

Reliability study on three-dimensional [formula omitted] interconnections for ultra-compact MMICs

Electroluminescence measurement of ballistic electron distribution in AlGaAs/GaAs heterojunction bipolar transistor structures with base width modulation

Transition from weak to strong spin-orbit scattering regime in diffusive InGaAs/InAlAs quantum wires

Bias acceleration model of drain resistance degradation in InP-based HEMTs

Improvement of InGaP/GaAs Heterointerface Quality by Controlling AsH 3 Flow Conditions

Ballistic electron propagation in macroscopic four-terminal structures and its gate controlled transmission and reflection

InP HEMT IC technology for 40 Gbit/s and beyond

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