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Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy

Journal of crystal growth, 2003-02, Vol.248, p.25-30

2003

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Effects of thermal annealing of ZnO layers grown by MBE

Journal of crystal growth, 2000-06, Vol.214, p.312-315

2000

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ZnO quantum dots synthesized by a vapor phase transport process

Applied physics letters, 2006-02, Vol.88 (6), p.063110-063110-3

2006

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ZnO growth using homoepitaxial technique on sapphire and Si substrates by metalorganic vapor phase epitaxy

Journal of crystal growth, 2002-04, Vol.237, p.553-557

2002

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ZnO growth on Si substrates by metalorganic vapor phase epitaxy

Journal of crystal growth, 2002-04, Vol.240 (1), p.112-116

2002

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ZnO growth toward optical devices by MOVPE using N2O

Journal of electronic materials, 2001-06, Vol.30 (6), p.659-661

2001

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Self-assembled ZnO quantum dots with tunable optical properties

Applied physics letters, 2006-07, Vol.89 (2), p.023122-023122-3

2006

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Homoepitaxial Growth of ZnO by Metalorganic Vapor Phase Epitaxy

Physica status solidi. B. Basic research, 2002-01, Vol.229 (2), p.915-919

2002

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Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy

Applied physics letters, 1993-04, Vol.62 (15), p.1800-1802

1993

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Growth of Polycrystalline GaN on Silicon (001) Substrates by RF Plasma Chemical Vapor Deposition with ZnO Buffer Layer

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.579-582

1999

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ZnO growth toward optical devies by MOVPE using N(2)O

Journal of electronic materials, 2001-06, Vol.30 (6), p.659

2001

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ZnO growth toward optical devices by MOVPE using N sub(2)O

Journal of electronic materials, 2001-06, Vol.30 (6), p.659-661

2001

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Effects of photoirradiation energy and of underlying layers on ZnSe growth by photoassisted MOVPE

Journal of crystal growth, 1999-03, Vol.198, p.1170-1173

1999

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Metalorganic vapor-phase epitaxy of p-type ZnSe and p/n junction diodes

Journal of crystal growth, 1994-12, Vol.145 (1), p.552-556

1994

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MOVPE Growth of High Quality Cubic GaN on GaAs: The Role of Growth Rates

Physica status solidi. A, Applied research, 1999-11, Vol.176 (1), p.509-512

1999

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Band structure parameters of Zn 1− xCd xSe investigated by spin–flip Raman spectroscopy

Journal of crystal growth, 2000, Vol.214, p.469-473

2000

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Raman spectra of cubic Zn1-xCdxS

Physical review. B, Condensed matter, 1992-08, Vol.46 (7), p.4273-4276

1992

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Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy

Journal of applied physics, 1998-02, Vol.83 (4), p.2035-2040

1998

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Effects of photoirradiation energy and of underlying layers on ZnSe growth by photoassisted MOVPE

Journal of crystal growth, 1999, Vol.198-99, p.1170-1173

1999

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Indium Doping to GaN Grown on GaAs{114}B Substrates by Metalorganic Vapor Phase Epitaxy

Physica status solidi. C, 2003 (1), p.434-437

2003

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Band structure parameters of Zn1−xCdxSe investigated by spin–flip Raman spectroscopy

Journal of crystal growth, 2000-06, Vol.214-215, p.469-473

2000

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Response to ‘‘Comment on ‘Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy’ ’’ [Appl. Phys. Lett. 62 , 1800 (1993)]

Applied physics letters, 1993-12, Vol.63 (23), p.3237-3237

1993

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Metalorganic vapor phase epitaxy growth and nitrogen-doping of ZnxCd1-xS using photo-assistance

Journal of crystal growth, 1994-12, Vol.145 (1-4), p.570-575

1994

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Effects of thermal annealing of ZnO layers grown by MBE

Journal of crystal growth, 2000, Vol.214-15, p.312-315

2000

Volltextzugriff (PDF)

ZnO growth using homoepitaxial technique on sapphire and Si substrates by metalorganic vapor phase epitaxy

Journal of crystal growth, 2002, Vol.237-39, p.553-557

2002

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Growth mode control of ZnO toward nanorod structures or high-quality layered structures by metal-organic vapor phase epitaxy

Effects of thermal annealing of ZnO layers grown by MBE

ZnO quantum dots synthesized by a vapor phase transport process

ZnO growth using homoepitaxial technique on sapphire and Si substrates by metalorganic vapor phase epitaxy

ZnO growth on Si substrates by metalorganic vapor phase epitaxy

ZnO growth toward optical devices by MOVPE using N2O

Self-assembled ZnO quantum dots with tunable optical properties

Homoepitaxial Growth of ZnO by Metalorganic Vapor Phase Epitaxy

Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy

Growth of Polycrystalline GaN on Silicon (001) Substrates by RF Plasma Chemical Vapor Deposition with ZnO Buffer Layer

ZnO growth toward optical devies by MOVPE using N(2)O

ZnO growth toward optical devices by MOVPE using N sub(2)O

Effects of photoirradiation energy and of underlying layers on ZnSe growth by photoassisted MOVPE

Metalorganic vapor-phase epitaxy of p-type ZnSe and p/n junction diodes

MOVPE Growth of High Quality Cubic GaN on GaAs: The Role of Growth Rates

Band structure parameters of Zn 1− xCd xSe investigated by spin–flip Raman spectroscopy

Raman spectra of cubic Zn1-xCdxS

Biexciton emission from thick ZnSe epilayer grown by molecular beam epitaxy

Effects of photoirradiation energy and of underlying layers on ZnSe growth by photoassisted MOVPE

Indium Doping to GaN Grown on GaAs{114}B Substrates by Metalorganic Vapor Phase Epitaxy

Band structure parameters of Zn1−xCdxSe investigated by spin–flip Raman spectroscopy

Response to ‘‘Comment on ‘Observation of phonon-plasmon coupled modes at the interface between ZnSe and semi-insulating GaAs by micro-Raman spectroscopy’ ’’ [Appl. Phys. Lett. 62 , 1800 (1993)]

Metalorganic vapor phase epitaxy growth and nitrogen-doping of ZnxCd1-xS using photo-assistance

Effects of thermal annealing of ZnO layers grown by MBE

ZnO growth using homoepitaxial technique on sapphire and Si substrates by metalorganic vapor phase epitaxy

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