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Femtofarad optoelectronic integration demonstrating energy-saving signal conversion and nonlinear functions

Nature photonics, 2019-07, Vol.13 (7), p.454-459

2019

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Heterogeneously integrated III–V/Si MOS capacitor Mach–Zehnder modulator

Nature photonics, 2017-07, Vol.11 (8), p.482-485

2017

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Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate

Nature photonics, 2021-01, Vol.15 (1), p.28-35

2021

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60 GHz Bandwidth Directly Modulated Membrane III-V Lasers on SiO2/Si

Journal of lightwave technology, 2022-05, Vol.40 (10), p.3299-3306

2022

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50-GHz-Bandwidth Membrane InGaAsP Electro-Absorption Modulator on Si Platform

Journal of lightwave technology, 2021-08, Vol.39 (16), p.5300-5306

2021

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Uncooled 100-GBaud Directly Modulated Membrane Lasers on SiC Substrate

Journal of lightwave technology, 2023-06, Vol.41 (11), p.3389-3396, Article 3389

2023

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Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

Optics express, 2015-01, Vol.23 (2), p.702-708

2015

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Estimation of Multi-Expert Sperm Assessments Using Video Recognition Based Model Trained by EMD Loss

IEEE access, 2024, Vol.12, p.112702-112713

2024

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Room temperature continuous-wave nanolaser diode utilized by ultrahigh-Q few-cell photonic crystal nanocavities

Optics express, 2018-10, Vol.26 (20), p.26598-26617

2018

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Epitaxial growth of InP to bury directly bonded thin active layer on SiO2/Si substrate for fabricating distributed feedback lasers on silicon

IET optoelectronics, 2015-08, Vol.9 (4), p.151-157

2015

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Tuning of gate adsorption: modification of a flexible metal-organic framework by secondary organic ligands

Dalton transactions : an international journal of inorganic chemistry, 2014-06, Vol.43 (22), p.8174-8177

2014

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Photonic crystal lasers using wavelength-scale embedded active region

Journal of physics. D, Applied physics, 2014-01, Vol.47 (2), p.23001-1-023001-18

2014

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Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

Applied sciences, 2021-02, Vol.11 (4), p.1801

2021

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47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

Photonics, 2021-02, Vol.8 (2), p.31

2021

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III-V/Si integration technology for laser diodes and Mach-Zehnder modulators

Japanese Journal of Applied Physics, 2019-04, Vol.58 (SB), p.SB0803

2019

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Stability of spiking effect in membrane laser neurons on Si utilizing optical feedback

2022 28th International Semiconductor Laser Conference (ISLC), 2022, p.1-2

2022

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Directly Modulated DFB Laser on SiO /Si Substrate for Datacenter Networks

Journal of lightwave technology, 2015-03, Vol.33 (6), p.1217-1222

2015

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Correction: Diamantopoulos et al. 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission. Photonics 2021, 8, 31

Photonics, 2021-09, Vol.8 (10), p.407

2021

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Ultralow-energy electro-absorption modulator consisting of InGaAsP-embedded photonic-crystal waveguide

APL photonics, 2017-05, Vol.2 (5), p.056105-056105-11

2017

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Directly modulated buried heterostructure DFB laser on SiO_2/Si substrate fabricated by regrowth of InP using bonded active layer

Optics express, 2014-05, Vol.22 (10), p.12139

2014

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Forward-biased nanophotonic detector for ultralow-energy dissipation receiver

APL photonics, 2018-04, Vol.3 (4), p.046101-046101-9

2018

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Evaluation of Device Parameters for Membrane Lasers on Si Fabricated with Active-Layer Bonding Followed by Epitaxial Growth

IEICE transactions on electronics, 2017-02, Vol.E100.C (2), p.196-203

2017

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Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver

IEICE transactions on electronics, 2017, Vol.E100.C (10), p.750-758

2017

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Low-power-consumption modulation of short-cavity DBR laser on SiO2/Si substrate

Optics express, 2024-04, Vol.32 (8), p.14746-14754

2024

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Low-power-consumption modulation of short-cavity DBR laser on SiO 2 /Si substrate

Optics express, 2024-04, Vol.32 (8), p.14746

2024

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Femtofarad optoelectronic integration demonstrating energy-saving signal conversion and nonlinear functions

Heterogeneously integrated III–V/Si MOS capacitor Mach–Zehnder modulator

Directly modulated membrane lasers with 108 GHz bandwidth on a high-thermal-conductivity silicon carbide substrate

60 GHz Bandwidth Directly Modulated Membrane III-V Lasers on SiO2/Si

50-GHz-Bandwidth Membrane InGaAsP Electro-Absorption Modulator on Si Platform

Uncooled 100-GBaud Directly Modulated Membrane Lasers on SiC Substrate

Heterogeneously integrated photonic-crystal lasers on silicon for on/off chip optical interconnects

Estimation of Multi-Expert Sperm Assessments Using Video Recognition Based Model Trained by EMD Loss

Room temperature continuous-wave nanolaser diode utilized by ultrahigh-Q few-cell photonic crystal nanocavities

Epitaxial growth of InP to bury directly bonded thin active layer on SiO2/Si substrate for fabricating distributed feedback lasers on silicon

Tuning of gate adsorption: modification of a flexible metal-organic framework by secondary organic ligands

Photonic crystal lasers using wavelength-scale embedded active region

Development of an Epitaxial Growth Technique Using III-V on a Si Platform for Heterogeneous Integration of Membrane Photonic Devices on Si

47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission

III-V/Si integration technology for laser diodes and Mach-Zehnder modulators

Stability of spiking effect in membrane laser neurons on Si utilizing optical feedback

Directly Modulated DFB Laser on SiO /Si Substrate for Datacenter Networks

Correction: Diamantopoulos et al. 47.5 GHz Membrane-III-V-on-Si Directly Modulated Laser for Sub-pJ/bit 100-Gbps Transmission. Photonics 2021, 8, 31

Ultralow-energy electro-absorption modulator consisting of InGaAsP-embedded photonic-crystal waveguide

Directly modulated buried heterostructure DFB laser on SiO_2/Si substrate fabricated by regrowth of InP using bonded active layer

Forward-biased nanophotonic detector for ultralow-energy dissipation receiver

Evaluation of Device Parameters for Membrane Lasers on Si Fabricated with Active-Layer Bonding Followed by Epitaxial Growth

Sub-fF-Capacitance Photonic-Crystal Photodetector Towards fJ/bit On-Chip Receiver

Low-power-consumption modulation of short-cavity DBR laser on SiO2/Si substrate

Low-power-consumption modulation of short-cavity DBR laser on SiO 2 /Si substrate

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