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A kinetic simulation study of the mechanisms of aluminum induced layer exchange process

Journal of applied physics, 2010-06, Vol.107 (11), p.114318-114318-11

2010

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Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si

Applied physics letters, 2005-07, Vol.87 (3), p.031905-031905-3

2005

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Recombination and transport through localized states in hydrogenated amorphous and microcrystalline silicon

Journal of non-crystalline solids, 2008-05, Vol.354 (19-25), p.2067-2078

Fuhs, Walther

2008

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Properties of silicon homojunctions with pulse-magnetron sputtered crystalline n + -emitter layers

Journal of applied physics, 2009-08, Vol.106 (4), p.044503-044503-8

2009

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Crystalline silicon films grown by pulsed dc magnetron sputtering

Journal of non-crystalline solids, 2002-04, Vol.299, p.128-132

2002

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Suppression of nucleation during the aluminum-induced layer exchange process

MRS proceedings, 2005, Vol.862, Article A2.2

2005

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Crystallinity of Thin Silicon Films Deposited at Low Temperatures: Combined Effect of Biasing and Structuring the Substrate

Japanese Journal of Applied Physics, 2001-06, Vol.40 (6R), p.4176

2001

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Transport and recombination in amorphous p-i-n-type solar cells studied by electrically detected magnetic resonance

Journal of applied physics, 1993-09, Vol.74 (6), p.3993-3999

1993

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a-Si:H deposited at high rate on the cathode of a rf-PECVD reactor

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.29-33

1998

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Electron and hole-spin densities in undoped illuminated a-Si:H

Journal of non-crystalline solids, 1996-05, Vol.198, p.367-370

1996

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Recombination at defects in amorphous silicon (a-Si:H)

Journal of non-crystalline solids, 1995-10, Vol.190 (1), p.9-20

1995

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Defect-Related Photoluminescence of a-Si:H

MRS proceedings, 1994, Vol.336, Article 141

1994

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Photoluminescence and photoconductivity of a-Si:H at high electric fields

Journal of non-crystalline solids, 1987-12, Vol.97, p.575-578

1987

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Non-radiative distant pair recombination in amorphous silicon

Journal of non-crystalline solids, 1998-05, Vol.227-230, p.190-196

1998

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Electronic properties of amorphous carbon (a-C:H)

Diamond and related materials, 1993-08, Vol.2 (10), p.1360-1364

1993

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Geminate and non-geminate recombination in amorphous silicon (a-Si:H)

Journal of non-crystalline solids, 1996, Vol.198, p.251-254

1996

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Tailoring the Structure of Low-Temperature-Deposited Microcrystalline Silicon Films by Biasing the Substrate

MRS proceedings, 2001, Vol.664, Article A15.4

2001

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Hydrogenated Amorphous Silicon—Material Properties and Device Applications

Charge Transport in Disordered Solids with Applications in Electronics, 2006, p.97-147

2006

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Elecrically Detected Magnetic Resonance in A-SI:H Pin Cells

MRS proceedings, 1993-01, Vol.297, Article 643

1993

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Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process

Conference Record of the Thirty-first IEEE Photovoltaic Specialists Conference, 2005, 2005, p.1197-1200

2005

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Thin-film technologies in photovoltaics

FUHS, Walther

2000

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Crystalline silicon films grown by pulsed dc magnetron sputtering

Journal of non-crystalline solids, 2002, Vol.299302, p.128-132

2002

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Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

Journal of non-crystalline solids, 1998-01, Vol.227, p.1164-1167

1998

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Frequency-resolved spectroscopy and its application to low-temperature geminate recombination in a-Si: H

Philosophical magazine. B, Physics of condensed matter. Structural, electronic, optical, and magnetic properties., 1994-12, Vol.70 (6), p.1219-1230

1994

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Chapter 148 - Thin-Film Technologies in Photovoltaics

World Renewable Energy Congress VI, 2000, p.731-736

Fuhs, Walther

2000

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A kinetic simulation study of the mechanisms of aluminum induced layer exchange process

Depletion regions in the aluminum-induced layer exchange process crystallizing amorphous Si

Recombination and transport through localized states in hydrogenated amorphous and microcrystalline silicon

Properties of silicon homojunctions with pulse-magnetron sputtered crystalline n + -emitter layers

Crystalline silicon films grown by pulsed dc magnetron sputtering

Suppression of nucleation during the aluminum-induced layer exchange process

Crystallinity of Thin Silicon Films Deposited at Low Temperatures: Combined Effect of Biasing and Structuring the Substrate

Transport and recombination in amorphous p-i-n-type solar cells studied by electrically detected magnetic resonance

a-Si:H deposited at high rate on the cathode of a rf-PECVD reactor

Electron and hole-spin densities in undoped illuminated a-Si:H

Recombination at defects in amorphous silicon (a-Si:H)

Defect-Related Photoluminescence of a-Si:H

Photoluminescence and photoconductivity of a-Si:H at high electric fields

Non-radiative distant pair recombination in amorphous silicon

Electronic properties of amorphous carbon (a-C:H)

Geminate and non-geminate recombination in amorphous silicon (a-Si:H)

Tailoring the Structure of Low-Temperature-Deposited Microcrystalline Silicon Films by Biasing the Substrate

Hydrogenated Amorphous Silicon—Material Properties and Device Applications

Elecrically Detected Magnetic Resonance in A-SI:H Pin Cells

Aluminium-induced crystallisation of amorphous silicon: parameter variation for optimisation of the process

Thin-film technologies in photovoltaics

Crystalline silicon films grown by pulsed dc magnetron sputtering

Room-temperature electroluminescence of Er-doped hydrogenated amorphous silicon

Frequency-resolved spectroscopy and its application to low-temperature geminate recombination in a-Si: H

Chapter 148 - Thin-Film Technologies in Photovoltaics

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