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Stacking-dependent electronic structure of bilayer silicene

Applied physics letters, 2014-03, Vol.104 (13)

2014

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EFL Learner Engagement in Automatic Written Evaluation

Frontiers in psychology, 2022-05, Vol.13, p.871707-871707

2022

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Visualizing coexisting surface states in the weak and crystalline topological insulator Bi2TeI

Nature materials, 2020-06, Vol.19 (6), p.610-616

2020

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Ordered and Reversible Hydrogenation of Silicene

Physical review letters, 2015-03, Vol.114 (12), Article 126101

2015

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From Silicene to Half-Silicane by Hydrogenation

ACS nano, 2015-11, Vol.9 (11), p.11192-11199

2015

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Photoexcitation Induced Quantum Dynamics of Charge Density Wave and Emergence of a Collective Mode in 1T‑TaS2

Nano letters, 2019-09, Vol.19 (9), p.6027-6034

2019

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Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

Nature communications, 2023-07, Vol.14 (1), p.4406-4406, Article 4406

2023

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Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

Science advances, 2018-09, Vol.4 (9), p.eaat8355-eaat8355

2018

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Observation of giant room-temperature anisotropic magnetoresistance in the topological insulator β-Ag2Te

Nature communications, 2024-02, Vol.15 (1), p.1259-1259, Article 1259

2024

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Finite-temperature violation of the anomalous transverse Wiedemann-Franz law

Science advances, 2020-04, Vol.6 (17), p.eaaz3522-eaaz3522

2020

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Direct imaging of surface states hidden in the third layer of Si (111)-7 × 7 surface by pz-wave tip

Applied physics letters, 2018-07, Vol.113 (3)

2018

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Near room-temperature ferromagnetism in air-stable two-dimensional Cr1−xTe grown by chemical vapor deposition

Nano research, 2022-04, Vol.15 (4), p.3763-3769

2022

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Tunable quantum order in bilayer Bi2Te3: Stacking dependent quantum spin Hall states

Applied physics letters, 2018-06, Vol.112 (24)

2018

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Coexistence of Surface Superconducting and Three-Dimensional Topological Dirac States in Semimetal KZnBi

Physical review. X, 2021-06, Vol.11 (2), p.021065, Article 021065

2021

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Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn

Science advances, 2019-05, Vol.5 (5), p.eaau6696-eaau6696

2019

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Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer

Science China materials, 2024-03, Vol.67 (3), p.906-913

2024

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Abnormal phase transition between two-dimensional high-density liquid crystal and low-density crystalline solid phases

Nature communications, 2018-01, Vol.9 (1), p.198-6, Article 198

2018

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Enhanced Ferromagnetism and Tunable Magnetic Anisotropy in a van der Waals Ferromagnet

Advanced science, 2024-09, Vol.11 (33), p.e2402819-n/a

2024

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Tuning magnetic splitting of zigzag graphene nanoribbons by edge functionalization with hydroxyl groups

Journal of applied physics, 2015-03, Vol.117 (11)

2015

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Visualizing near-coexistence of massless Dirac electrons and ultra-massive saddle point electrons

SciPost physics, 2023-10, Vol.15 (4), p.178, Article 178

2023

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Two-dimensional silicon-carbon hybrids with a honeycomb lattice： New family for two-dimensional photovoltaic materials

Science China. Physics, mechanics & astronomy, 2015-10, Vol.58 (10), p.81-88, Article 106801

2015

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Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure

Science advances, 2020-03, Vol.6 (10), p.eaaz0948-eaaz0948

2020

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Bi 3 O 2.5 Se 2 : a two-dimensional high-mobility polar semiconductor with large interlayer and interfacial charge transfer

Nanoscale, 2024-08, Vol.16 (31), p.14766-14774

2024

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Anomalous Thermal Transport Driven by Electron–Phonon Coupling in 2D Semiconductor h‐BP

Advanced functional materials, 2022-11, Vol.32 (45), p.n/a

2022

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High Thermoelectric Performance in Earth‐Abundant Cu3SbS4 by Promoting Doping Efficiency via Rational Vacancy Design

Advanced functional materials, 2023-04, Vol.33 (15), p.n/a

2023

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Stacking-dependent electronic structure of bilayer silicene

EFL Learner Engagement in Automatic Written Evaluation

Visualizing coexisting surface states in the weak and crystalline topological insulator Bi2TeI

Ordered and Reversible Hydrogenation of Silicene

From Silicene to Half-Silicane by Hydrogenation

Photoexcitation Induced Quantum Dynamics of Charge Density Wave and Emergence of a Collective Mode in 1T‑TaS2

Vertically grown ultrathin Bi2SiO5 as high-κ single-crystalline gate dielectric

Electronic structures and unusually robust bandgap in an ultrahigh-mobility layered oxide semiconductor, Bi2O2Se

Observation of giant room-temperature anisotropic magnetoresistance in the topological insulator β-Ag2Te

Finite-temperature violation of the anomalous transverse Wiedemann-Franz law

Direct imaging of surface states hidden in the third layer of Si (111)-7 × 7 surface by pz-wave tip

Near room-temperature ferromagnetism in air-stable two-dimensional Cr1−xTe grown by chemical vapor deposition

Tunable quantum order in bilayer Bi2Te3: Stacking dependent quantum spin Hall states

Coexistence of Surface Superconducting and Three-Dimensional Topological Dirac States in Semimetal KZnBi

Large spin-orbit torque efficiency enhanced by magnetic structure of collinear antiferromagnet IrMn

Exploring the high dielectric performance of Bi2SeO5: from bulk to bilayer and monolayer

Abnormal phase transition between two-dimensional high-density liquid crystal and low-density crystalline solid phases

Enhanced Ferromagnetism and Tunable Magnetic Anisotropy in a van der Waals Ferromagnet

Tuning magnetic splitting of zigzag graphene nanoribbons by edge functionalization with hydroxyl groups

Visualizing near-coexistence of massless Dirac electrons and ultra-massive saddle point electrons

Two-dimensional silicon-carbon hybrids with a honeycomb lattice： New family for two-dimensional photovoltaic materials

Exchange bias and quantum anomalous nomalous Hall effect in the MnBi2Te4/CrI3 heterostructure

Bi 3 O 2.5 Se 2 : a two-dimensional high-mobility polar semiconductor with large interlayer and interfacial charge transfer

Anomalous Thermal Transport Driven by Electron–Phonon Coupling in 2D Semiconductor h‐BP

High Thermoelectric Performance in Earth‐Abundant Cu3SbS4 by Promoting Doping Efficiency via Rational Vacancy Design

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