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Microbiological community analysis of vermicompost tea and its influence on the growth of vegetables and cereals

Canadian journal of microbiology, 2012-07, Vol.58 (7), p.836-847

2012

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Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

Applied physics letters, 1987-10, Vol.51 (14), p.1080-1082

FRITZ, I. J

1987

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X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers

Journal of applied physics, 1996-04, Vol.79 (7), p.3578-3584

1996

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The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor deposition

Journal of materials science. Materials in electronics, 2002-11, Vol.13 (11), p.649-657

2002

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Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy

Applied physics letters, 1988-02, Vol.52 (5), p.377-379

1988

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Semiconductor characterization by a new contactless electroreflectance technique employing surface acoustic waves

Semiconductor science and technology, 1997-01, Vol.12 (1), p.19-21

1997

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Barrier-width dependence of emission in triple-quantum-well broadband light-emitting diodes

Electronics letters, 1999-01, Vol.35 (2), p.171-172

1999

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Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

Applied physics letters, 1987-09, Vol.51 (13), p.1004-1006

1987

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p-channel strained quantum well, field-effect transistor

Applied physics letters, 1986-08, Vol.49 (8), p.461-463

1986

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Energy levels of finite-depth quantum wells in an electric field

Journal of applied physics, 1987-03, Vol.61 (6), p.2273-2276

Fritz, I. J.

1987

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Light-hole conduction in InGaAs/GaAs strained-layer superlattices

Applied physics letters, 1985-01, Vol.46 (2), p.187-189

1985

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Dependence of critical layer thickness on strain for InXGa1-XAs/GaAs strained-layer superlattices

Applied physics letters, 1985-05, Vol.46 (10), p.967-969

1985

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novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry-Perot cavity with unstrained InGaAs/InAlAs mirrors

Applied physics letters, 1991-04, Vol.58 (15), p.1608-1610

1991

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Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices

Applied physics letters, 1988-09, Vol.53 (12), p.1098-1100

1988

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Reflectance modulator based on tandem Fabry-Perot resonators

Applied physics letters, 1991-08, Vol.59 (7), p.753-755

1991

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High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectors

Applied physics letters, 1988-11, Vol.53 (20), p.1961-1963

1988

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Modulation-doped (Al,Ga)As/AlAs superlattice: electron transfer into AlAs

Applied physics letters, 1985-08, Vol.47 (3), p.284-286

1985

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Elastic properties of UO2 at high pressure

Journal of applied physics, 1976-10, Vol.47 (10), p.4353-4358

Fritz, I. J.

1976

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Fabry-Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature

Applied physics letters, 1993-03, Vol.62 (9), p.919-921

1993

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Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

IEEE electron device letters, 1989-04, Vol.10 (4), p.150-152

1989

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Broadband light emitting diodes from pseudo-alloy quantum wells

Electronics letters, 1995-05, Vol.31 (10), p.829-830, Article 829

1995

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Graded-composition buffer layers using digital AlGaAsSb alloys

Applied physics letters, 1995-10, Vol.67 (16), p.2320-2322

1995

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Determination of energy-band dispersion curves in strained-layer structures

Applied physics letters, 1989-05, Vol.54 (22), p.2227-2229

1989

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GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain current

Applied physics letters, 1988-03, Vol.52 (12), p.975-977

1988

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Electrical transport of holes in GaAS/InGaAs/GaAs single strained quantum wells

Applied physics letters, 1986-06, Vol.48 (24), p.1678-1680

1986

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Microbiological community analysis of vermicompost tea and its influence on the growth of vegetables and cereals

Role of experimental resolution in measurements of critical layer thickness for strained-layer epitaxy

X-ray reciprocal-space mapping of strain relaxation and tilting in linearly graded InAlAs buffers

The growth of infrared antimonide-based semiconductor lasers by metal-organic chemical vapor deposition

Controversy of critical layer thickness for InGaAs/GaAs strained-layer epitaxy

Semiconductor characterization by a new contactless electroreflectance technique employing surface acoustic waves

Barrier-width dependence of emission in triple-quantum-well broadband light-emitting diodes

Critical layer thickness in In0.2Ga0.8As/GaAs single strained quantum well structures

p-channel strained quantum well, field-effect transistor

Energy levels of finite-depth quantum wells in an electric field

Light-hole conduction in InGaAs/GaAs strained-layer superlattices

Dependence of critical layer thickness on strain for InXGa1-XAs/GaAs strained-layer superlattices

novel reflectance modulator employing an InGaAs/AlGaAs strained-layer superlattice Fabry-Perot cavity with unstrained InGaAs/InAlAs mirrors

Electrical and optical studies of dislocation filtering in InGaAs/GaAs strained-layer superlattices

Reflectance modulator based on tandem Fabry-Perot resonators

High photoconductive gain in lateral InAsSb strained-layer superlattice infrared detectors

Modulation-doped (Al,Ga)As/AlAs superlattice: electron transfer into AlAs

Elastic properties of UO2 at high pressure

Fabry-Perot reflectance modulator for 1.3 μm from (InAlGa)As materials grown at low temperature

Long-wavelength, InAsSb strained-layer superlattice photovoltaic infrared detectors

Broadband light emitting diodes from pseudo-alloy quantum wells

Graded-composition buffer layers using digital AlGaAsSb alloys

Determination of energy-band dispersion curves in strained-layer structures

GaAs/(In,Ga)As, p-channel, multiple strained quantum well field-effect transistors with high transconductance and high peak saturated drain current

Electrical transport of holes in GaAS/InGaAs/GaAs single strained quantum wells

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