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Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3085-3092

2009

Link zum Volltext
IEEE_Xplore

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3499-3504

2009

Link zum Volltext
IEEE_Xplore

Effectiveness of Internal Versus External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis

IEEE transactions on nuclear science, 2008-08, Vol.55 (4), p.2259-2266

2008

Link zum Volltext
IEEE_Xplore

Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2904-2910

2011

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IEEE_Xplore

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2943-2947

2008

Link zum Volltext
IEEE_Xplore

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2831-2836

2012

Link zum Volltext
IEEE_Xplore

SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3217-3222

2006

Link zum Volltext
IEEE_Xplore

Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs

IEEE transactions on nuclear science, 2010-12, Vol.57 (6), p.3575-3581

2010

Link zum Volltext
IEEE_Xplore

SEU Analysis of Complex Circuits Implemented in Actel RTAX-S FPGA Devices

IEEE transactions on nuclear science, 2011-06, Vol.58 (3), p.1015-1022

2011

Link zum Volltext
IEEE_Xplore

Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3280-3284

2009

Link zum Volltext
IEEE_Xplore

TPA Laser and Heavy-Ion SEE Testing: Complementary Techniques for SDRAM Single-Event Evaluation

IEEE transactions on nuclear science, 2009-12, Vol.56 (6), p.3334-3340

2009

Link zum Volltext
IEEE_Xplore

A Comprehensive Methodology for Complex Field Programmable Gate Array Single Event Effects Test and Evaluation

IEEE transactions on nuclear science, 2009-04, Vol.56 (2), p.366-374

2009

Link zum Volltext
IEEE_Xplore

An Analysis of Single Event Upset Dependencies on High Frequency and Architectural Implementations within Actel RTAX-S Family Field Programmable Gate Arrays

IEEE transactions on nuclear science, 2006-12, Vol.53 (6), p.3569-3574

2006

Link zum Volltext
IEEE_Xplore

32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2702-2710

2011

Link zum Volltext
IEEE_Xplore

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.3394-3400

2008

Link zum Volltext
IEEE_Xplore

Risk Reduction for Use of Complex Devices in Space Projects

IEEE transactions on nuclear science, 2007-12, Vol.54 (6), p.2137-2140

2007

Link zum Volltext
IEEE_Xplore

Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs

IEEE transactions on nuclear science, 2009-02, Vol.56 (1), p.208-213

2009

Link zum Volltext
IEEE_Xplore

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2880-2885

2008

Link zum Volltext
IEEE_Xplore

Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3011-3015

2012

Link zum Volltext
IEEE_Xplore

Enhancing Observability of Signal Composition and Error Signatures During Dynamic SEE Analog to Digital Device Testing

IEEE transactions on nuclear science, 2010-08, Vol.57 (4), p.1958-1965

2010

Link zum Volltext
IEEE_Xplore

TID and SEE Response of Advanced Samsung and Micron 4G NAND Flash Memories for the NASA MMS Mission

2009 IEEE Radiation Effects Data Workshop, 2009, p.114-122

2009

Link zum Volltext
IEEE_Xplore

Investigation of Current Spike Phenomena during Heavy Ion Irradiation of NAND Flash Memories

2011 IEEE Radiation Effects Data Workshop, 2011, p.1-9

2011

Link zum Volltext
IEEE_Xplore

Radiation Performance of 1 Gbit DDR2 SDRAMs Fabricated with 80-90 nm CMOS

2008 IEEE Radiation Effects Data Workshop, 2008, p.42-46

2008

Link zum Volltext
IEEE_Xplore

TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory

2007 IEEE Radiation Effects Data Workshop, 2007, p.221-225

2007

Link zum Volltext
IEEE_Xplore

Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

2006 IEEE Radiation Effects Data Workshop, 2006, p.126-130

2006

Link zum Volltext
IEEE_Xplore

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Impact of Low-Energy Proton Induced Upsets on Test Methods and Rate Predictions

Single-Event Upsets and Multiple-Bit Upsets on a 45 nm SOI SRAM

Effectiveness of Internal Versus External SEU Scrubbing Mitigation Strategies in a Xilinx FPGA: Design, Test, and Analysis

Effect of Radiation Exposure on the Retention of Commercial NAND Flash Memory

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Correlation of Laser Test Results With Heavy Ion Results for NAND Flash Memory

SEE and TID Characterization of an Advanced Commercial 2Gbit NAND Flash Nonvolatile Memory

Selection of Well Contact Densities for Latchup-Immune Minimal-Area ICs

SEU Analysis of Complex Circuits Implemented in Actel RTAX-S FPGA Devices

Effect of Radiation Exposure on the Endurance of Commercial nand Flash Memory

TPA Laser and Heavy-Ion SEE Testing: Complementary Techniques for SDRAM Single-Event Evaluation

A Comprehensive Methodology for Complex Field Programmable Gate Array Single Event Effects Test and Evaluation

An Analysis of Single Event Upset Dependencies on High Frequency and Architectural Implementations within Actel RTAX-S Family Field Programmable Gate Arrays

32 and 45 nm Radiation-Hardened-by-Design (RHBD) SOI Latches

Low Energy Proton Single-Event-Upset Test Results on 65 nm SOI SRAM

Risk Reduction for Use of Complex Devices in Space Projects

Evidence for Lateral Angle Effect on Single-Event Latchup in 65 nm SRAMs

Device-Orientation Effects on Multiple-Bit Upset in 65 nm SRAMs

Retention Characteristics of Commercial NAND Flash Memory After Radiation Exposure

Enhancing Observability of Signal Composition and Error Signatures During Dynamic SEE Analog to Digital Device Testing

TID and SEE Response of Advanced Samsung and Micron 4G NAND Flash Memories for the NASA MMS Mission

Investigation of Current Spike Phenomena during Heavy Ion Irradiation of NAND Flash Memories

Radiation Performance of 1 Gbit DDR2 SDRAMs Fabricated with 80-90 nm CMOS

TID and SEE Response of an Advanced Samsung 4Gb NAND Flash Memory

Radiation Performance of 1 Gbit DDR SDRAMs Fabricated in the 90 nm CMOS Technology Node

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