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Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2017-01, Vol.391, p.10-13

Friedland, E.

2017

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Characterization of Staphylococcus aureus Cas9: a smaller Cas9 for all-in-one adeno-associated virus delivery and paired nickase applications

Genome Biology, 2015-11, Vol.16 (1), p.257-257, Article 257

2015

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Deactivation of the GATA Transcription Factor ELT-2 Is a Major Driver of Normal Aging in C. elegans

PLoS genetics, 2016-04, Vol.12 (4), p.e1005956-e1005956

2016

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Heritable custom genomic modifications in Caenorhabditis elegans via a CRISPR-Cas9 system

Genetics (Austin), 2013-11, Vol.195 (3), p.1181-1185

2013

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Pairwise library screen systematically interrogates Staphylococcus aureus Cas9 specificity in human cells

Nature communications, 2018-07, Vol.9 (1), p.2962-7, Article 2962

2018

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Molten salt synthesis of LaCoO3 perovskite

Journal of materials science, 2017-10, Vol.52 (19), p.11383-11390

2017

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Publisher Correction: Pairwise library screen systematically interrogates Staphylococcus aureus Cas9 specificity in human cells

Nature communications, 2018-08, Vol.9 (1), p.3542-1, Article 3542

2018

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Influence of electronic stopping on amorphization energies

Surface & coatings technology, 2007-08, Vol.201 (19), p.8220-8224

Friedland, E.

2007

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Heritable genome editing in C. elegans via a CRISPR-Cas9 system

Nature methods, 2013-08, Vol.10 (8), p.741-743

2013

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Synthetic Gene Networks That Count

Science (American Association for the Advancement of Science), 2009-05, Vol.324 (5931), p.1199-1202

2009

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Thermal etching of SiC

Applied surface science, 2012-05, Vol.258 (15), p.5561-5566

2012

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Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-03, Vol.371, p.240-244

2016

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Novel Genetic Approach for In Vivo Vascular Imaging in Mice

Circulation research, 2012-03, Vol.110 (7), p.938-947

2012

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A study of amorphization energies in silicon for different implantation parameters

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2007-03, Vol.256 (1), p.193-198

Friedland, E.

2007

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Study of silver diffusion in silicon carbide

Journal of nuclear materials, 2009-05, Vol.389 (2), p.326-331

2009

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Influence of radiation damage on xenon diffusion in silicon carbide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2014-08, Vol.332, p.415-420

2014

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Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding

Journal of nuclear materials, 2011-03, Vol.410 (1), p.24-31

2011

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Influence of radiation damage on krypton diffusion in silicon carbide

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-07, Vol.354, p.42-46

2015

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Damage formation and optical absorption in neutron irradiated SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-09, Vol.286, p.97-101

2012

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SEM analysis of ion implanted SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2013-11, Vol.315, p.136-141

2013

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Temperature dependence of damage formation in Ag ion irradiated 4H-SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2010-10, Vol.268 (19), p.2996-3000

2010

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Influence of radiation damage on strontium and iodine diffusion in silicon carbide

Journal of nuclear materials, 2012-06, Vol.425 (1-3), p.205-210

2012

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Scanning electron microscopy of the surfaces of ion implanted SiC

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2015-07, Vol.354, p.23-27

2015

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Dependence of amorphization energies in SiC on electronic stopping

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2004-05, Vol.217 (3), p.396-401

Friedland, E.

2004

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Investigation of amorphization energies for heavy ion implants into silicon carbide at depths far beyond the projected ranges

Characterization of Staphylococcus aureus Cas9: a smaller Cas9 for all-in-one adeno-associated virus delivery and paired nickase applications

Deactivation of the GATA Transcription Factor ELT-2 Is a Major Driver of Normal Aging in C. elegans

Heritable custom genomic modifications in Caenorhabditis elegans via a CRISPR-Cas9 system

Pairwise library screen systematically interrogates Staphylococcus aureus Cas9 specificity in human cells

Molten salt synthesis of LaCoO3 perovskite

Development of a gene-editing approach to restore vision loss in Leber congenital amaurosis type 10

Publisher Correction: Pairwise library screen systematically interrogates Staphylococcus aureus Cas9 specificity in human cells

Influence of electronic stopping on amorphization energies

Heritable genome editing in C. elegans via a CRISPR-Cas9 system

Synthetic Gene Networks That Count

Thermal etching of SiC

Influence of radiation damage on the thermal properties of silicon carbide implanted with heavy noble gas ions

Novel Genetic Approach for In Vivo Vascular Imaging in Mice

A study of amorphization energies in silicon for different implantation parameters

Study of silver diffusion in silicon carbide

Influence of radiation damage on xenon diffusion in silicon carbide

Investigation of silver and iodine transport through silicon carbide layers prepared for nuclear fuel element cladding

Influence of radiation damage on krypton diffusion in silicon carbide

Damage formation and optical absorption in neutron irradiated SiC

SEM analysis of ion implanted SiC

Temperature dependence of damage formation in Ag ion irradiated 4H-SiC

Influence of radiation damage on strontium and iodine diffusion in silicon carbide

Scanning electron microscopy of the surfaces of ion implanted SiC

Dependence of amorphization energies in SiC on electronic stopping

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