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Growth and properties of epitaxial rare-earth scandate thin films

Applied physics. A, Materials science & processing, 2006-04, Vol.83 (1), p.103-106

2006

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Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications

Microelectronic engineering, 2005-06, Vol.80, p.150-153

2005

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A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices

IEEE electron device letters, 1991-05, Vol.12 (5), p.246-248

1991

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Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides

Microelectronic engineering, 2004-04, Vol.72 (1), p.288-293

2004

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Measurements of the Band Offsets Between Amorphous LaAlO3 and Silicon

Applied physics letters, 2004-02, Vol.84 (5)

2004

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Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides

Physica. E, Low-dimensional systems & nanostructures, 2004-03, Vol.21 (2), p.712-716

2004

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Interpretation of the photoelectron spectra of molecularly adsorbed CO

Solid state communications, 1975-08, Vol.17 (3), p.391-396

1975

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Interface states and the barrier height of Schottky diodes

Physics letters. A, 1993-02, Vol.173 (2), p.190-194

1993

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The analysis of complex samples by spectroscopic ellipsometry

Applied surface science, 1990-01, Vol.41-42, p.323-328

Freeouf, J.L.

1990

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Silicide Schottky barriers: An elemental description

Solid state communications, 1980-01, Vol.33 (10), p.1059-1061

Freeouf, J.L.

1980

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Schottky barriers: Models and “tests”

Surface science, 1983-01, Vol.132 (1), p.233-249

Freeouf, J.L.

1983

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Schottky barrier: models and “tests”

Surface science letters, 1983-09, Vol.132 (1), p.A342-A342

Freeouf, J.L.

1983

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Interpretation of the photoelectron spectra of molecularly adsorbed CO

Solid state communications, 1993-12, Vol.88 (11), p.1079-1084

1993

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Defective heterojunction models

Surface science, 1986-03, Vol.168 (1), p.518-530

1986

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SCHOTTKY BARRIERS: MODELS AND “TESTS”

Surfaces and Interfaces: Physics and Electronics, 1983, p.233-249

FREEOUF, J.L.

1983

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Electron spectroscopy study of hydrogenated amorphous carbon films formed by methane ion beam deposition

Thin solid films, 1984-01, Vol.120 (3), p.231-238

1984

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Dielectric function of SmS

Solid state communications, 1983-09, Vol.47 (9), p.677-680

1983

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The electronic properties and control of semiconductor interfaces

Corrosion science, 1990, Vol.31, p.53-58

1990

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Dielectric function of SmS: I. Optical transitions

Solid state communications, 1983, Vol.47 (9), p.677-680

1983

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The delocalized d-electrons in the semimagnetic alloy Cd1−xMnxTe

Solid state communications, 1982-01, Vol.44 (12), p.1547-1550

1982

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Defective heterojunction models

Surface science letters, 1986-03, Vol.168 (1), p.A129-A130

1986

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Radiation hard, double-graded, drift-dominated InP solar cells

3rd World Conference onPhotovoltaic Energy Conversion, 2003. Proceedings of, 2003, Vol.1, p.726-729 Vol.1

2003

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Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides

Extended Abstracts of International Workshop on Gate Insulator (IEEE Cat. No.03EX765), 2003, p.112-118

2003

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The delocalized d-electrons in the semimagnetic alloy Cd 1−xMn xTe

Solid state communications, 1982, Vol.44 (12), p.1547-1550

1982

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Surface Fermi Level Engineering - Or There's More To Schottky Barriers Than Just The Arguments Among Physicists

LEOS 1991 Summer Topical Meetings on Epitaxial Materials and In-Situ Processing for Optoelectronic Devices. Photonics and Optoelectronics, 1991, p.27-28

1991

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Growth and properties of epitaxial rare-earth scandate thin films

Rare-earth scandate single- and multi-layer thin films as alternative gate oxides for microelectronic applications

A gate-quality dielectric system for SiGe metal-oxide-semiconductor devices

Separate and independent control of interfacial band alignments and dielectric constants in transition metal rare earth complex oxides

Measurements of the Band Offsets Between Amorphous LaAlO3 and Silicon

Spectroscopic studies of the electrical structure of transition metal and rare earth complex oxides

Interpretation of the photoelectron spectra of molecularly adsorbed CO

Interface states and the barrier height of Schottky diodes

The analysis of complex samples by spectroscopic ellipsometry

Silicide Schottky barriers: An elemental description

Schottky barriers: Models and “tests”

Schottky barrier: models and “tests”

Interpretation of the photoelectron spectra of molecularly adsorbed CO

Defective heterojunction models

SCHOTTKY BARRIERS: MODELS AND “TESTS”

Electron spectroscopy study of hydrogenated amorphous carbon films formed by methane ion beam deposition

Dielectric function of SmS

The electronic properties and control of semiconductor interfaces

Dielectric function of SmS: I. Optical transitions

The delocalized d-electrons in the semimagnetic alloy Cd1−xMnxTe

Defective heterojunction models

Radiation hard, double-graded, drift-dominated InP solar cells

Separate and independent control of interfacial band alignments and dielectric constants in complex rare-earth/transition metal (Re/Tm) oxides

The delocalized d-electrons in the semimagnetic alloy Cd 1−xMn xTe

Surface Fermi Level Engineering - Or There's More To Schottky Barriers Than Just The Arguments Among Physicists

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