UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 227

Sortiert nach

A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

Applied physics letters, 2022-04, Vol.120 (17)

2022

Link zum Volltext

Verfügbarkeit prüfen

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Journal of applied physics, 2022-07, Vol.132 (4)

2022

Link zum Volltext

Verfügbarkeit prüfen

Proposition of a model elucidating the AlN-on-Si (111) microstructure

Journal of applied physics, 2018-06, Vol.123 (21)

2018

Link zum Volltext

Verfügbarkeit prüfen

Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

Applied physics letters, 2019-12, Vol.115 (26)

2019

Link zum Volltext

Verfügbarkeit prüfen

Whispering-gallery mode InGaN microdisks on GaN substrates

Optics express, 2021-07, Vol.29 (14), p.21280-21289

2021

Link zum Volltext

Verfügbarkeit prüfen

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Optics express, 2019-04, Vol.27 (8), p.11800-11808

2019

Link zum Volltext

Verfügbarkeit prüfen

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

Link zum Volltext

Verfügbarkeit prüfen

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120 , 171103 (2022)]

Applied physics letters, 2022-05, Vol.120 (19)

2022

Link zum Volltext

Verfügbarkeit prüfen

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

Journal of electronic materials, 2023-08, Vol.52 (8), p.5249-5255

2023

Link zum Volltext

Verfügbarkeit prüfen

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

IEEE photonics technology letters, 2018-09, Vol.30 (17), p.1567-1570

2018

Link zum Volltext
IEEE_Xplore

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

Journal of crystal growth, 2011, Vol.314 (1), p.85-91

2011

Link zum Volltext

Verfügbarkeit prüfen

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

Semiconductor science and technology, 2013-03, Vol.28 (3), p.35006

2013

Link zum Volltext

Verfügbarkeit prüfen

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Current Applied Physics, 2017, 17(12), , pp.1601-1608

2017

Link zum Volltext

Verfügbarkeit prüfen

Diseñar desde los márgenes: Mar del Plata desde la perspectiva del Centro de Investigaciones Proyectuales y Acciones del Diseño Industrial (CIPADI)

Cuadernos del Centro de Estudios de Diseño y Comunicación, 2024-07 (232)

2024

Link zum Volltext

Verfügbarkeit prüfen

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Applied physics letters, 2008-11, Vol.93 (20), p.202108-202108-3

2008

Link zum Volltext

Verfügbarkeit prüfen

Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

Journal of micromechanics and microengineering, 2016-10, Vol.26 (10), p.105015

2016

Link zum Volltext

Verfügbarkeit prüfen

Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-04, Vol.372, p.67-71

2016

Link zum Volltext

Verfügbarkeit prüfen

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Journal of crystal growth, 2010-09, Vol.312 (19), p.2683-2688

2010

Link zum Volltext

Verfügbarkeit prüfen

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Journal of crystal growth, 2012-08, Vol.353 (1), p.108-114

2012

Link zum Volltext

Verfügbarkeit prüfen

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

IEEE electron device letters, 2008-11, Vol.29 (11), p.1187-1189

2008

Link zum Volltext
IEEE_Xplore

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

Applied physics letters, 2009-09, Vol.95 (12)

2009

Link zum Volltext

Verfügbarkeit prüfen

Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection

IEEE electron device letters, 2009-12, Vol.30 (12), p.1308-1310

2009

Link zum Volltext
IEEE_Xplore

Reduction of stacking faults in (11$ bar 2 $0) and (11$ bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

Physica status solidi. A, Applications and materials science, 2007-01, Vol.204 (1), p.282-289

2007

Link zum Volltext

Verfügbarkeit prüfen

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

Applied physics letters, 2000-10, Vol.77 (16), p.2551-2553

2000

Link zum Volltext

Verfügbarkeit prüfen

Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

Applied surface science, 2023-09, Vol.631, p.157513, Article 157513

2023

Link zum Volltext

Verfügbarkeit prüfen

1 – 25 von 227

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(122)
Mit Volltextzugriff
(148)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

3 weitere anzeigen...

Weniger anzeigen...

Erscheinungsjahr

n.n

Thema

Science & Technology
(94)
Physics
(66)
Physical Sciences
(64)
Technology
(43)
Physics, Applied
(41)
Materials Science
(33)
Animals
(26)
Physics, Condensed Matter
(23)
Engineering
(21)
Materials Science, Multidisciplinary
(21)
Exact Sciences And Technology
(20)
Life Sciences & Biomedicine
(20)
Rats
(20)
Humans
(17)
Biological And Medical Sciences
(16)
Engineering Sciences
(16)
Gallium Nitrides
(15)
Medical Sciences
(15)
Optics
(12)
Engineering, Electrical & Electronic
(11)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 30 Tagen
(1)
... seit 90 Tagen
(2)

Menü

Weitere Dienste

Einstellungen

A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells

Comprehensive model for ideal reverse leakage current components in Schottky barrier diodes tested in GaN-on-SiC samples

Proposition of a model elucidating the AlN-on-Si (111) microstructure

Terahertz intersubband absorption of GaN/AlGaN step quantum wells grown by MOVPE on Si(111) and Si(110) substrates

Whispering-gallery mode InGaN microdisks on GaN substrates

III-nitride on silicon electrically injected microrings for nanophotonic circuits

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120, 171103 (2022)]

Publisher's Note: “A 5.7 THz GaN/AlGaN quantum cascade detector based on polar step quantum wells” [Appl. Phys. Lett. 120 , 171103 (2022)]

High Breakdown Voltage GaN Schottky Diodes for THz Frequency Multipliers

Optical and Thermal Performances of (Ga,In)N/GaN Light Emitting Diodes Transferred on a Flexible Tape

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

Imaging and counting threading dislocations in c-oriented epitaxial GaN layers

Trap states analysis in AlGaN/AlN/GaN and InAlN/AlN/GaN high electron mobility transistors

Diseñar desde los márgenes: Mar del Plata desde la perspectiva del Centro de Investigaciones Proyectuales y Acciones del Diseño Industrial (CIPADI)

Valence band offset of the ZnO/AlN heterojunction determined by x-ray photoemission spectroscopy

Piezoelectric MEMS resonators based on ultrathin epitaxial GaN heterostructures on Si

Two-dimensional dopant profiling of gallium nitride p–n junctions by scanning capacitance microscopy

Growth of GaN based structures on Si(1 1 0) by molecular beam epitaxy

Nature and origin of V-defects present in metalorganic vapor phase epitaxy-grown (InxAl1−x)N layers as a function of InN content, layer thickness and growth parameters

Demonstration of AlGaN/GaN High-Electron-Mobility Transistors Grown by Molecular Beam Epitaxy on Si(110)

Relaxation and emission of Bragg-mode and cavity-mode polaritons in a ZnO microcavity at room temperature

Backside-Illuminated GaN-on-Si Schottky Photodiodes for UV Radiation Detection

Reduction of stacking faults in (11$ bar 2 $0) and (11$ bar 2 $2) GaN films by ELO techniques and benefit on GaN wells emission

High electron mobility in AlGaN/GaN heterostructures grown on bulk GaN substrates

Atomic resolution interface structure and vertical current injection in highly uniform MoS2 heterojunctions with bulk GaN

Suchergebnisse filtern