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Magnetically controllable silicon microring with ferrofluid cladding

Optics letters, 2016-12, Vol.41 (23), p.5576-5579

2016

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High-frequency GaAs optomechanical bullseye resonator

APL photonics, 2021-01, Vol.6 (1), p.16104-016104-6

2021

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Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In 0.68Ga 0.32As 0.7P 0.3) barriers for high current injection efficiency

Journal of crystal growth, 2010-07, Vol.312 (15), p.2279-2283

2010

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The effect of Ge implantation dose on the optical properties of Ge nanocrystals in SiO2

Nanotechnology, 2006-09, Vol.17 (18), p.4548-4553

2006

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Comparison of Plasmonic Arrays of Holes Recorded by Interference Lithography and Focused Ion Beam

IEEE photonics journal, 2012-04, Vol.4 (2), p.544-551

2012

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Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix

Journal of materials science, 2007-09, Vol.42 (18), p.7757-7761

2007

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Resonant amplification via Er-doped clad Si photonic molecules: Towards compact low-loss/high-Q Si photonic devices

Solid-state electronics, 2019-05, Vol.155, p.144-149

2019

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Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers

IEEE photonics technology letters, 2005-07, Vol.17 (7), p.1378-1380

2005

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Hybrid planar microresonators with organic and InGaAs active media

Optics express, 2010-05, Vol.18 (11), p.11650-11656

2010

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GaN nano- and micro-spheres fabricated selectively on silicon

Journal of crystal growth, 2007-10, Vol.308 (1), p.37-40

2007

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Evidences of the simultaneous presence of bow-tie and diamond scars in rare-earth doped amorphous silicon microstadium resonators

Journal of applied physics, 2008-03, Vol.103 (6), p.063106-063106-4

2008

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Effect of Nucleation Parameters of Ge Quantum Dots Grown over Silicon Oxide by LPCVD

Journal of Integrated Circuits and Systems, 2020-11, Vol.2 (2), p.81-84

2020

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Resonant modes and laser spectrum of microdisk lasers

Applied physics letters, 1995-05, Vol.66 (22), p.2932-2934

1995

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Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy

Journal of crystal growth, 2004-06, Vol.266 (4), p.429-434

2004

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High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules

Electronics letters, 2004-01, Vol.40 (2), p.140-141

2004

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The spectrum of microdisk lasers

Journal of applied physics, 1996-07, Vol.80 (2), p.644-653

1996

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Induced Optical Losses in Optoelectronic Devices due Focused Ion Beam Damages

Journal of Integrated Circuits and Systems, 2020-12, Vol.7 (2), p.87-91

2020

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Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In sub(0.68)Ga sub(0.32)As sub(0.7)P sub(0.3)) barriers for high current injection efficiency

Journal of crystal growth, 2010-07, Vol.312 (15), p.2279-2283

2010

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Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier

Electronics letters, 2003-08, Vol.39 (17), p.1271-1272, Article 1271

2003

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Broad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator

IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2191-2193

2005

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Highly integrated laser-modulator module for high-speed high dynamic range analog transmission

IEEE photonics technology letters, 2005-10, Vol.17 (10), p.2188-2190

2005

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Enhancing the Delay/Advance -Bandwidth Product using degenerate resonances of photonic molecules in a Silicon Photonics Platform

2019 SBFoton International Optics and Photonics Conference (SBFoton IOPC), 2019, p.1-5

2019

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In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy

Journal of crystal growth, 1998-10, Vol.193 (4), p.510-515

1998

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Spatial composition dependence in InGaP growth on pre-patterned GaAs substrates by chemical beam epitaxy

Journal of crystal growth, 1999-06, Vol.203 (3), p.317-326

1999

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Analysis of Be doping of InGaP lattice matched to GaAs

Journal of crystal growth, 2000, Vol.208 (1), p.65-72

2000

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Magnetically controllable silicon microring with ferrofluid cladding

High-frequency GaAs optomechanical bullseye resonator

Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In 0.68Ga 0.32As 0.7P 0.3) barriers for high current injection efficiency

The effect of Ge implantation dose on the optical properties of Ge nanocrystals in SiO2

Comparison of Plasmonic Arrays of Holes Recorded by Interference Lithography and Focused Ion Beam

Fabrication and characterization of Ge nanocrystalline growth by ion implantation in SiO2 matrix

Resonant amplification via Er-doped clad Si photonic molecules: Towards compact low-loss/high-Q Si photonic devices

Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption Modulators integrated with semiconductor amplifiers

Hybrid planar microresonators with organic and InGaAs active media

GaN nano- and micro-spheres fabricated selectively on silicon

Evidences of the simultaneous presence of bow-tie and diamond scars in rare-earth doped amorphous silicon microstadium resonators

Effect of Nucleation Parameters of Ge Quantum Dots Grown over Silicon Oxide by LPCVD

Resonant modes and laser spectrum of microdisk lasers

Strong spatial beryllium doping selectivity on InGaP layers grown on pre-patterned GaAs substrates by chemical beam epitaxy

High performance uncooled C-band, 10 Gbit/s InGaAlAs MQW electroabsorption modulator integrated to semiconductor amplifier in laser-integrated modules

The spectrum of microdisk lasers

Induced Optical Losses in Optoelectronic Devices due Focused Ion Beam Damages

Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In sub(0.68)Ga sub(0.32)As sub(0.7)P sub(0.3)) barriers for high current injection efficiency

Full C-band tunable high fibre output power electroabsorption modulator integrated with semiconductor optical amplifier

Broad temperature operation and widely tunable high dynamic range high-speed amplified electroabsorption modulator

Highly integrated laser-modulator module for high-speed high dynamic range analog transmission

Enhancing the Delay/Advance -Bandwidth Product using degenerate resonances of photonic molecules in a Silicon Photonics Platform

In0.49Ga0.51P growth on pre-patterned GaAs substrates by chemical beam epitaxy

Spatial composition dependence in InGaP growth on pre-patterned GaAs substrates by chemical beam epitaxy

Analysis of Be doping of InGaP lattice matched to GaAs

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