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Sociology, narrative, and the quality versus quantity debate (Goethe versus Newton): Can computer-assisted story grammars help us understand the rise of Italian fascism (1919-1922)?

Theory and society, 2010-11, Vol.39 (6), p.593-629

Franzosi, Roberto P.

2010

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Introduction to Part I: Historical Perspectives

The American behavioral scientist (Beverly Hills), 2008-06, Vol.51 (10), p.1472-1476

Franzosi, Roberto P.

2008

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Study of microdefects in GaAs by X-ray diffuse scattering

Journal of crystal growth, 1993, Vol.126 (1), p.85-90

Franzosi, P.

1993

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Investigation of crystal defects in III–V heterostructures by X-ray topography and electron microscopy

Journal of crystal growth, 1993, Vol.126 (1), p.109-124

Franzosi, P.

1993

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Raman scattering study of residual strain in GaAs/InP heterostructures

Journal of applied physics, 1994-04, Vol.75 (8), p.4156-4160

1994

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Dopant-induced lattice dilation in n -type InP homoepitaxial layers

Journal of applied physics, 1996-05, Vol.79 (9), p.6890-6894

1996

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On the mechanisms of strain release in molecular-beam-epitaxy-grown InxGa1-xAs/GaAs single heterostructures

Journal of applied physics, 1989-09, Vol.66 (5), p.1975-1983

1989

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Sociology, narrative, and the quality versus quantity debate ?

Theory and society, 2010-11, Vol.39 (6), p.593

Franzosi, Roberto P

2010

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Solution crystal growth of urea and derivatives for nonlinear optical applications

Journal of crystal growth, 1996-09, Vol.166 (1-4), p.528-532

1996

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Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction

Journal of crystal growth, 1996-07, Vol.165 (1-2), p.8-14

1996

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Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs

Materials science & engineering. B, Solid-state materials for advanced technology, 1998-08, Vol.55 (1), p.79-85

1998

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Diffraction anomalous near-edge structure in ordered GaInP

Journal of applied physics, 1998-04, Vol.83 (7), p.3552-3555

1998

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Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction

Journal of crystal growth, 1993-09, Vol.132 (3), p.427-434

1993

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Structural properties of Zn-diffused InP layers

Journal of applied physics, 1997-12, Vol.82 (11), p.5416-5421

1997

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Vapor phase epitaxy of Hg1-xCdxTe on CdTe heteroepitaxial substrates

Journal of crystal growth, 1995-04, Vol.149 (1-2), p.35-44

1995

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Morphological characterization and strain release of GaAs/InAs (001) heterostructures

Applied physics letters, 1996-08, Vol.69 (7), p.957-959

1996

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Panchromatic cathodoluminescence investigation of defects in CdTe bulk crystals and homoepitaxial layers

Applied physics letters, 1994-12, Vol.65 (25), p.3257-3259

1994

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Lattice strain relaxation in GaAs/InP(001) and GaAs/GaP(001) heterostructures

Solid state communications, 1996-03, Vol.97 (9), p.781-783

1996

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Study of Precipitate‐like Defects in CdTe Crystals

Journal of the Electrochemical Society, 1995-09, Vol.142 (9), p.3185-3188

1995

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X-ray diffractometric examinations of GaAs epitaxial layers grown by molecular beam epitaxy at low temperature

Journal of crystal growth, 1993-11, Vol.134 (1), p.151-153

1993

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An X-ray diffraction study of the lattice strain relaxation in MOVPE GaAs/Ge heterostructures

Journal of physics. D, Applied physics, 1995-04, Vol.28 (4A), p.A129-A132

1995

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Investigation of the interface grading in III-V heterostructures by double-crystal diffractometry

Journal of applied physics, 1989-02, Vol.65 (4), p.1544-1549

1989

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Structural characterization of Zn-diffused InP layers by x-ray diffraction and standing-waves method

Applied physics letters, 1996-11, Vol.69 (20), p.3019-3021

1996

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X-Ray Diffraction Study of Lattice Strain Relaxation in Mismatched III-V Heteroepitaxial Layers

Materials science forum, 1996-02, Vol.203, p.223-230

1996

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Crystal growth and characterisation of urea by physical vapour transport in semi-open cells

Journal of crystal growth, 1995-01, Vol.146 (1-4), p.29-36

1995

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Sociology, narrative, and the quality versus quantity debate (Goethe versus Newton): Can computer-assisted story grammars help us understand the rise of Italian fascism (1919-1922)?

Introduction to Part I: Historical Perspectives

Study of microdefects in GaAs by X-ray diffuse scattering

Investigation of crystal defects in III–V heterostructures by X-ray topography and electron microscopy

Raman scattering study of residual strain in GaAs/InP heterostructures

Dopant-induced lattice dilation in n -type InP homoepitaxial layers

On the mechanisms of strain release in molecular-beam-epitaxy-grown InxGa1-xAs/GaAs single heterostructures

Sociology, narrative, and the quality versus quantity debate ?

Solution crystal growth of urea and derivatives for nonlinear optical applications

Determination of lattice parameters in the epitaxial AlSb/GaSb system by high resolution X-ray diffraction

Identification of individual and aligned microdefects in bulk vertical Bridgman- and liquid encapsulated Czochralski-grown GaAs

Diffraction anomalous near-edge structure in ordered GaInP

Accurate determination of lattice mismatch in the epitaxial AlAs/GaAs system by high-resolution X-ray diffraction

Structural properties of Zn-diffused InP layers

Vapor phase epitaxy of Hg1-xCdxTe on CdTe heteroepitaxial substrates

Morphological characterization and strain release of GaAs/InAs (001) heterostructures

Panchromatic cathodoluminescence investigation of defects in CdTe bulk crystals and homoepitaxial layers

Lattice strain relaxation in GaAs/InP(001) and GaAs/GaP(001) heterostructures

Study of Precipitate‐like Defects in CdTe Crystals

X-ray diffractometric examinations of GaAs epitaxial layers grown by molecular beam epitaxy at low temperature

An X-ray diffraction study of the lattice strain relaxation in MOVPE GaAs/Ge heterostructures

Investigation of the interface grading in III-V heterostructures by double-crystal diffractometry

Structural characterization of Zn-diffused InP layers by x-ray diffraction and standing-waves method

X-Ray Diffraction Study of Lattice Strain Relaxation in Mismatched III-V Heteroepitaxial Layers

Crystal growth and characterisation of urea by physical vapour transport in semi-open cells

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