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Optical gain in GaInN/GaN heterostructures
Applied physics letters, 1996-06, Vol.68 (26), p.3746-3748
1996
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Optical gain in the nitrides: are there differences to other III–V semiconductors?
Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.43 (1), p.201-206
1997
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Selective area epitaxy of GaInAs using conventional and novel group III precursors
Journal of crystal growth, 1994-12, Vol.145 (1), p.242-248
1994
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Control of monolayer terrace formation in selective epitaxy
Journal of crystal growth, 1997-01, Vol.170 (1-4), p.695-699
1997
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Improved composition homogeneity during selective area epitaxy of GaInAs using a novel In precursor
Applied physics letters, 1994-02, Vol.64 (7), p.854-856
1994
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Investigation of strain effects in selectively grown GaAs on Si
Journal of crystal growth, 1994-12, Vol.145 (1), p.345-352
1994
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Spontaneous and Stimulated Recombination in the Nitrides
MRS proceedings, 1996, Vol.449, Article 641
1996
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A 7F(2) cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs
IEEE journal of solid-state circuits, 2000-05, Vol.35 (5), p.713-718
2000
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Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells
Conference Digest. 15th IEEE International Semiconductor Laser Conference, 1996, p.151-152
1996
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A 390-mm/sup 2/, 16-bank, 1-Gb DDR SDRAM with hybrid bitline architecture
IEEE journal of solid-state circuits, 1999-11, Vol.34 (11), p.1580-1588
1999
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A 7F/sup 2/ cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs
IEEE journal of solid-state circuits, 2000-05, Vol.35 (5), p.713-718
2000
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A 7F2 cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs
IEEE journal of solid-state circuits, 2000-05, Vol.35 (5), p.713
2000
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A 7F super(2) cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4-Gb DRAMs
IEEE journal of solid-state circuits, 2000-01, Vol.35 (5)
2000
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A 390-mm(2), 16-bank, 1-Gb DDR SDRAM with hybrid bitlinearchitecture
IEEE journal of solid-state circuits, 1999-11, Vol.34 (11), p.1580-1588
1999
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Monolayer growth in InP/GaInAs quantum wells grown by selective area MOVPE
Seventh International Conference on Indium Phosphide and Related Materials, 1995, p.831-834
1995
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A 390-mm super(2), 16-bank, 1-Gb DDR SDRAM with hybrid bitline architecture
IEEE journal of solid-state circuits, 1999-01, Vol.34 (11)
1999
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Planar and selective MOVPE of GaInAs-InP structures with novel group III and group V precursors
1993 (5th) International Conference on Indium Phosphide and Related Materials, 1993, p.48-51
1993
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Quantum confined Stark effect in InGaAs/InP and InGaAs/InGaAsP multi quantum well structures
Superlattices and microstructures, 1990, Vol.7 (4), p.309-313
1990
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A 113 mm/sup 2/ 600 Mb/s/pin 512 Mb DDR2 SDRAM with vertically-folded bitline architecture
2001 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC (Cat. No.01CH37177), 2001, p.382-383
2001
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A 390 mm/sup 2/ 16-bank 1 Gb DDR SDRAM with hybrid bitline architecture
1999 IEEE International Solid-State Circuits Conference. Digest of Technical Papers. ISSCC. First Edition (Cat. No.99CH36278), 1999, p.422-423
1999
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Steplike growth of monolayer terraces in GaInAs quantum wells grown by selective epitaxy
Proceedings of 1994 IEEE 6th International Conference on Indium Phosphide and Related Materials (IPRM), 1994, p.603-606
1994
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A 7F/sup 2/ cell and bitline architecture featuring tilted array devices and penalty-free vertical BL twists for 4 Gb DRAM's
1999 Symposium on VLSI Circuits. Digest of Papers (IEEE Cat. No.99CH36326), 1999, p.125-126
1999
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