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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

Applied physics letters, 2015-08, Vol.107 (9)

2015

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The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps

IEEE transactions on electron devices, 2011-11, Vol.58 (11), p.3652-3666

2011

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IEEE_Xplore

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

IEEE transactions on electron devices, 2014-09, Vol.61 (9), p.3103-3110

2014

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On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

Journal of applied physics, 2017-04, Vol.121 (14)

2017

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Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

Applied physics letters, 2015-11, Vol.107 (22)

2015

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Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

IEEE transactions on electron devices, 2014-03, Vol.61 (3), p.666-673

2014

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IEEE_Xplore

Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs

IEEE electron device letters, 2016-08, Vol.37 (8), p.1055-1058

2016

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IEEE_Xplore

A Pragmatic Model to Predict Future Device Aging

IEEE access, 2023-01, Vol.11, p.1-1

2023

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On the importance of electron-electron scattering for hot-carrier degradation

Japanese Journal of Applied Physics, 2015-04, Vol.54 (4S), p.4-1-04DC18-6

2015

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Toward a streamlined projection of small device bias temperature instability lifetime distributions

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2013-01, Vol.31 (1)

2013

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Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices

IEEE transactions on electron devices, 2011-07, Vol.58 (7), p.2061-2071

2011

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IEEE_Xplore

Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions

IEEE transactions on electron devices, 2021-04, Vol.68 (4), p.1454-1460

2021

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IEEE_Xplore

Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques

Solid-state electronics, 2023-09, Vol.207, p.108722, Article 108722

2023

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Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

IEEE transactions on electron devices, 2023-04, Vol.70 (4), p.1-7

2023

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Impact of Individual Charged Gate-Oxide Defects on the Entire I- V Characteristic of Nanoscaled FETs

IEEE electron device letters, 2012-06, Vol.33 (6), p.779-781

2012

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IEEE_Xplore

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

IEEE electron device letters, 2016-01, Vol.37 (1), p.84-87

2016

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IEEE_Xplore

Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

IEEE transactions on electron devices, 2021-07, Vol.68 (7), p.3246-3253

2021

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IEEE_Xplore

Hot-carrier induced degradation of Ge/STI interfaces in Ge-on-Si junction devices

Solid-state electronics, 2024-04, Vol.214, p.108867, Article 108867

2024

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Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

2014, 2013

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Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition

IEEE transactions on electron devices, 2023-12, Vol.70 (12), p.6512-6519

2023

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IEEE_Xplore

A multi-energy level agnostic approach for defect generation during TDDB stress

Solid-state electronics, 2022-07, Vol.193, p.108298, Article 108298

2022

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A multi-energy level agnostic simulation approach to defect generation

Solid-state electronics, 2021-10, Vol.184, p.108056, Article 108056

2021

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Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration

IEEE transactions on electron devices, 2021-02, Vol.68 (2), p.464-470

2021

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IEEE_Xplore

Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Microelectronics and reliability, 2023-07, Vol.146, p.115004, Article 115004

2023

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Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

IEEE transactions on electron devices, 2013-12, Vol.60 (12), p.4002-4007

2013

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IEEE_Xplore

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Correlation of interface states/border traps and threshold voltage shift on AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors

The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction-Diffusion to Switching Oxide Traps

Predictive Hot-Carrier Modeling of n-Channel MOSFETs

On the distribution of oxide defect levels in Al2O3 and HfO2 high-k dielectrics deposited on InGaAs metal-oxide-semiconductor devices studied by capacitance-voltage hysteresis

Impact of starting measurement voltage relative to flat-band voltage position on the capacitance-voltage hysteresis and on the defect characterization of InGaAs/high-k metal-oxide-semiconductor stacks

Implications of BTI-Induced Time-Dependent Statistics on Yield Estimation of Digital Circuits

Intrinsic Robustness of TFET Subthreshold Swing to Interface and Oxide Traps: A Comparative PBTI Study of InGaAs TFETs and MOSFETs

A Pragmatic Model to Predict Future Device Aging

On the importance of electron-electron scattering for hot-carrier degradation

Toward a streamlined projection of small device bias temperature instability lifetime distributions

Off-State Degradation of High-Voltage-Tolerant nLDMOS-SCR ESD Devices

Modeling of Repeated FET Hot-Carrier Stress and Anneal Cycles Using Si-H Bond Dissociation/Passivation Energy Distributions

Investigating the correlation between interface and dielectric trap densities in aged p-MOSFETs using current-voltage, charge pumping, and 1/f noise characterization techniques

Understanding the Excess 1/f Noise in MOSFETs at Cryogenic Temperatures

Impact of Individual Charged Gate-Oxide Defects on the Entire I- V Characteristic of Nanoscaled FETs

Understanding and Modeling the Temperature Behavior of Hot-Carrier Degradation in SiON nMOSFETs

Investigation of the Impact of Hot-Carrier-Induced Interface State Generation on Carrier Mobility in nMOSFET

Hot-carrier induced degradation of Ge/STI interfaces in Ge-on-Si junction devices

Reliability of High Mobility SiGe Channel MOSFETs for Future CMOS Applications

Analytical Markov Model to Calculate TDDB at Any Voltage and Temperature Stress Condition

A multi-energy level agnostic approach for defect generation during TDDB stress

A multi-energy level agnostic simulation approach to defect generation

Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration

Comphy v3.0—A compact-physics framework for modeling charge trapping related reliability phenomena in MOS devices

Channel Hot Carrier Degradation Mechanism in Long/Short Channel n-FinFETs

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