UB Paderborn / Katalog / Suche / in CDI

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Nature communications, 2013, Vol.4 (1), p.2322-2322, Article 2322

2013

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Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source

Journal of crystal growth, 2016-12, Vol.456, p.151-154

2016

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A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2009-06, Vol.311 (13), p.3423-3427

2009

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GaN1−xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions

Journal of crystal growth, 2013-11, Vol.383, p.95-99

2013

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Potential of Mn doped In1-xGaxN for implementing intermediate band solar cells

Solar energy materials and solar cells, 2009-05, Vol.93 (5), p.641-644

2009

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Extreme voltage recovery in GaAs:Ti intermediate band solar cells

Solar energy materials and solar cells, 2013-01, Vol.108, p.175-179

2013

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Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates

Journal of crystal growth, 2014-01, Vol.386, p.135-138

2014

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Direct band-gap crossover in epitaxial monolayer boron nitride

Nature communications, 2019-06, Vol.10 (1), p.2639-7, Article 2639

2019

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Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

Journal of crystal growth, 2008-05, Vol.310 (11), p.2746-2750

2008

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Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

Journal of crystal growth, 2011-05, Vol.323 (1), p.80-83

2011

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Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy

Journal of crystal growth, 2009-03, Vol.311 (7), p.2054-2057

2009

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The origin and control of the sources of AMR in (Ga,Mn)As devices

Journal of magnetism and magnetic materials, 2009-04, Vol.321 (8), p.1001-1008

2009

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The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers

Journal of crystal growth, 2003-04, Vol.251 (1), p.311-316

2003

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Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources

Journal of crystal growth, 2017-11, Vol.477, p.154-158

2017

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Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN

Progress in crystal growth and characterization of materials, 2017-06, Vol.63 (2), p.25-39

2017

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Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite Al x Ga 1-x N

Progress in crystal growth and characterization of materials, 2017-06, Vol.63 (2), p.25-39

2017

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Molecular beam epitaxy of free-standing wurtzite Al Ga1−N layers

Journal of crystal growth, 2015-09, Vol.425, p.125-128

2015

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Photoelectron spectroscopy study of Ga1-xMnxAs(001) surface oxide and low temperature cleaning

Surface science, 2005-07, Vol.585 (1-2), p.66-74

2005

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Growth of free-standing bulk wurtzite Al Ga1−N layers by molecular beam epitaxy using a highly efficient RF plasma source

Journal of crystal growth, 2016-12, Vol.456, p.151-154

2016

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Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

Journal of crystal growth, 2017-02, Vol.459, p.185-188

2017

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Molecular beam epitaxy of free-standing wurtzite AlxGa1−xN layers

Journal of crystal growth, 2015-09, Vol.425, p.125-128

2015

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Exploration of the growth parameter space for MBE-grown GaN1−xSbx highly mismatched alloys

Journal of crystal growth, 2015-09, Vol.425, p.255-257

2015

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Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

Journal of crystal growth, 2001, Vol.222 (1), p.96-103

2001

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Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt

Journal of crystal growth, 2012-09, Vol.354 (1), p.44-48

2012

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Study of electron–hole generation and recombination in semiconductors using the Osaka free electron laser

Physica. B, Condensed matter, 2002-03, Vol.314 (1), p.431-436

2002

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Einstellungen

Tetragonal phase of epitaxial room-temperature antiferromagnet CuMnAs

Growth of free-standing bulk wurtzite AlxGa1−xN layers by molecular beam epitaxy using a highly efficient RF plasma source

A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy

GaN1−xSbx highly mismatched alloys grown by low temperature molecular beam epitaxy under Ga-rich conditions

Potential of Mn doped In1-xGaxN for implementing intermediate band solar cells

Extreme voltage recovery in GaAs:Ti intermediate band solar cells

Molecular beam epitaxy of InN nanorods on Si- and C-faces of SiC substrates

Direct band-gap crossover in epitaxial monolayer boron nitride

Growth of epitaxial thin films of scandium nitride on 100-oriented silicon

Molecular beam epitaxy as a method for the growth of free-standing bulk zinc-blende GaN and AlGaN crystals

Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy

The origin and control of the sources of AMR in (Ga,Mn)As devices

The growth of GaMnAs films by molecular beam epitaxy using arsenic dimers

Unintentional boron incorporation in AlGaN layers grown by plasma-assisted MBE using highly efficient nitrogen RF plasma-sources

Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite AlxGa1-xN

Molecular beam epitaxy as a growth technique for achieving free-standing zinc-blende GaN and wurtzite Al x Ga 1-x N

Molecular beam epitaxy of free-standing wurtzite Al Ga1−N layers

Photoelectron spectroscopy study of Ga1-xMnxAs(001) surface oxide and low temperature cleaning

Growth of free-standing bulk wurtzite Al Ga1−N layers by molecular beam epitaxy using a highly efficient RF plasma source

Novel GaN-based vertical heterostructure field effect transistor structures using crystallographic KOH etching and overgrowth

Molecular beam epitaxy of free-standing wurtzite AlxGa1−xN layers

Exploration of the growth parameter space for MBE-grown GaN1−xSbx highly mismatched alloys

Competition between band gap and yellow luminescence in undoped GaN grown by MOVPE on sapphire substrate

Plasma-assisted electroepitaxy of GaN layers from the liquid Ga melt

Study of electron–hole generation and recombination in semiconductors using the Osaka free electron laser

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