UB Paderborn / Katalog / Suche / in CDI

1 – 25 von 101

Sortiert nach

Electroforming and resistive switching in silicon dioxide resistive memory devices

RSC advances, 2015-01, Vol.5 (27), p.21215-21236

2015

Volltextzugriff (PDF)

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Journal of applied physics, 2014-07, Vol.116 (4)

2014

Volltextzugriff (PDF)

Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

Advanced intelligent systems, 2020-05, Vol.2 (5), p.n/a

2020

Volltextzugriff (PDF)

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

Scientific reports, 2016-02, Vol.6 (1), p.21268-21268, Article 21268

2016

Volltextzugriff (PDF)

Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

Nano letters, 2014-02, Vol.14 (2), p.813-818

2014

Volltextzugriff (PDF)

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

Applied physics letters, 2015-02, Vol.106 (6)

2015

Volltextzugriff (PDF)

Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications

IEEE transactions on electron devices, 2017-07, Vol.64 (7), p.2977-2983

2017

Volltextzugriff (PDF)

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

Journal of applied physics, 2014-07, Vol.116 (4)

2014

Volltextzugriff (PDF)

Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy

Progress in solid state chemistry, 2016-09, Vol.44 (3), p.75-85

2016

Volltextzugriff (PDF)

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

Journal of applied physics, 2012-12, Vol.112 (12)

2012

Volltextzugriff (PDF)

Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

Applied physics letters, 2014-10, Vol.105 (16)

2014

Volltextzugriff (PDF)

Study of polarity effect in SiOx-based resistive switching memory

Applied physics letters, 2012-07, Vol.101 (5)

2012

Volltextzugriff (PDF)

Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

Applied physics letters, 2012-02, Vol.100 (8)

2012

Volltextzugriff (PDF)

Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

Applied physics letters, 2012-10, Vol.101 (18)

2012

Volltextzugriff (PDF)

Tristate Operation in Resistive Switching of \hbox Thin Films

IEEE electron device letters, 2012-12, Vol.33 (12), p.1702-1704

2012

Volltextzugriff (PDF)

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

Applied physics letters, 2016-01, Vol.108 (3)

2016

Volltextzugriff (PDF)

Integrated One Diode–One Resistor Architecture in Nanopillar SiO x Resistive Switching Memory by Nanosphere Lithography

Nano letters, 2014-02, Vol.14 (2), p.813-818

2014

Volltextzugriff (PDF)

Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

Applied physics letters, 2017-06, Vol.110 (23)

2017

Volltextzugriff (PDF)

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

Nanoscale, 2018-09, Vol.10 (33), p.15608-15614

2018

Volltextzugriff (PDF)

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

2016-01

Volltextzugriff (PDF)

Memory switching properties of e-beam evaporated SiO x on N++ Si substrate

Applied physics letters, 2012-02, Vol.100 (8), p.083502-083502-3

2012

Volltextzugriff (PDF)

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Journal of physics. D, Applied physics, 2018-02, Vol.51 (5), p.55108

2018

Volltextzugriff (PDF)

Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications

Journal of electronic materials, 2020-06, Vol.49 (6), p.3499-3503

2020

Volltextzugriff (PDF)

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

Applied physics letters, 2016-01, Vol.108 (3)

2016

Volltextzugriff (PDF)

Mid-IR resonant cavity detectors

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2017-03, Vol.35 (2)

2017

Volltextzugriff (PDF)

1 – 25 von 101

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(78)
Mit Volltextzugriff
(89)

Publikationsform

1 weiteren anzeigen...

Weniger anzeigen...

Sprache

Englisch
(100)
Japanisch
(16)

Erscheinungsjahr

n.n

Thema

Science & Technology
(62)
Physical Sciences
(28)
Life Sciences & Biomedicine
(23)
Physics
(22)
Physics, Applied
(21)
Switching
(17)
Technology
(15)
Humans
(13)
Female
(11)
Engineering
(10)
Random Access Memory
(10)
Engineering, Electrical & Electronic
(9)
Male
(9)
Silicon Dioxide
(9)
Applied Physics
(8)
Materials Science
(8)
Animals
(7)
Electric Potential
(7)
Psychiatry
(7)
Psychology
(7)

15 weitere anzeigen...

Weniger anzeigen...

Neu hinzugefügt

... seit 90 Tagen
(1)

Menü

Weitere Dienste

Einstellungen

Electroforming and resistive switching in silicon dioxide resistive memory devices

Intrinsic SiOx-based unipolar resistive switching memory. II. Thermal effects on charge transport and characterization of multilevel programing

Complementary Metal‐Oxide Semiconductor and Memristive Hardware for Neuromorphic Computing

Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon Oxide

Integrated One Diode―One Resistor Architecture in Nanopillar SiOx Resistive Switching Memory by Nanosphere Lithography

Stabilization of multiple resistance levels by current-sweep in SiOx-based resistive switching memory

Memcomputing (Memristor + Computing) in Intrinsic SiOx-Based Resistive Switching Memory: Arithmetic Operations for Logic Applications

Intrinsic SiOx-based unipolar resistive switching memory. I. Oxide stoichiometry effects on reversible switching and program window optimization

Proton exchange reactions in SiOx-based resistive switching memory: Review and insights from impedance spectroscopy

Understanding the resistive switching characteristics and mechanism in active SiOx-based resistive switching memory

Discussion on device structures and hermetic encapsulation for SiOx random access memory operation in air

Study of polarity effect in SiOx-based resistive switching memory

Memory switching properties of e-beam evaporated SiOx on N++ Si substrate

Effect of hydrogen/deuterium incorporation on electroforming voltage of SiOx resistive random access memory

Tristate Operation in Resistive Switching of \hbox Thin Films

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiOx-based resistive switching memory

Integrated One Diode–One Resistor Architecture in Nanopillar SiO x Resistive Switching Memory by Nanosphere Lithography

Unidirectional threshold resistive switching in Au/NiO/Nb:SrTiO3 devices

Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applications

A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiOx layer

Memory switching properties of e-beam evaporated SiO x on N++ Si substrate

Internal filament modulation in low-dielectric gap design for built-in selector-less resistive switching memory application

Current-Sweep Operation on Nonlinear Selectorless RRAM for Multilevel Cell Applications

Study of self-compliance behaviors and internal filament characteristics in intrinsic SiO{sub x}-based resistive switching memory

Mid-IR resonant cavity detectors

Suchergebnisse filtern