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Controlled large-scale fabrication of sea sponge-like ZnO nanoarchitectures on textured silicon

CrystEngComm, 2009, Vol.11 (12), p.2770

2009

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Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

Materials science forum, 2009-01, Vol.615-617, p.845-848

2009

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Defects in High Energy Ion Irradiated 4H-SiC

Materials science forum, 2009-03, Vol.615-617, p.397-400

2009

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New Achievements on CVD Based Methods for SiC Epitaxial Growth

Materials Science Forum, 2005-05, Vol.483-485, p.67-72

2005

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SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

Materials science forum, 2006-10, Vol.527-529, p.179-182

2006

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SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

Materials science forum, 2009-01, Vol.600-603, p.123-126

2009

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Single crystal silicon carbide detector of emitted ions and soft x rays from power laser-generated plasmas

Journal of applied physics, 2009-06, Vol.105 (12), p.123304-123304-7

2009

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Ion beam effects on the surface and on the bulk of thin films of polymethylmethacrylate

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-08, Vol.116 (1), p.168-172

1996

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4H SiC Epitaxial Growth with Chlorine Addition

Chemical vapor deposition, 2006-08, Vol.12 (8-9), p.509-515

2006

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Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

Materials science forum, 2009, Vol.600-603, p.619-622

2009

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Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

Materials science forum, 2009-01, Vol.615-617, p.857-860

2009

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3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor

Materials science forum, 2009, Vol.600-603, p.243-246

2009

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Void Formation in Differently Oriented Si in the Early Stage of SiC Growth

Materials science forum, 2009, Vol.600-603, p.215-218

2009

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Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

Materials science forum, 2010-01, Vol.645-648, p.865-868

2010

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Very High Growth Rate Epitaxy Processes with Chlorine Addition

Materials science forum, 2007-01, Vol.556-557, p.157-160

2007

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Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films

Materials science forum, 2009, Vol.615-617, p.629-632

2009

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Growth of 3C-SiC on Si: Influence of Process Pressure

Materials science forum, 2009, Vol.600-603, p.211-214

2009

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Single track regime in ion implanted polystyrene

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1988-05, Vol.32 (1), p.131-135

1988

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Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization

Materials science forum, 2007, Vol.556-557, p.137-140

2007

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Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route

Materials science forum, 2007-01, Vol.556-557, p.93-96

2007

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Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Materials science forum, 2006-10, Vol.527-529, p.163-166

2006

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Carbonization Study of Different Silicon Orientations

Materials science forum, 2007-01, Vol.556-557, p.171-174

2007

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Editorial

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 1996-08, Vol.116 (1-4), p.vii

1996

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High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

MRS proceedings, 2006, Vol.911, Article 0911-B02-01

2006

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Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

Materials science forum, 2006-10, Vol.527-529, p.199-202

2006

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Controlled large-scale fabrication of sea sponge-like ZnO nanoarchitectures on textured silicon

Ultra Low Noise Epitaxial 4H-SiC X-Ray Detectors

Defects in High Energy Ion Irradiated 4H-SiC

New Achievements on CVD Based Methods for SiC Epitaxial Growth

SiC-4H Epitaxial Layer Growth Using Trichlorosilane (TCS) as Silicon Precursor

SiC-4H Epitaxial Layer Growth by Trichlorosilane (TCS) as Silicon Precursor at Very High Growth Rate

Single crystal silicon carbide detector of emitted ions and soft x rays from power laser-generated plasmas

Ion beam effects on the surface and on the bulk of thin films of polymethylmethacrylate

4H SiC Epitaxial Growth with Chlorine Addition

Compensation Effects in 7 MeV C Irradiated n-Doped 4H-SiC

Diffusion Length in n-Doped 4H Silicon Carbide Crystals Detected by Alpha Particle Probe

3C-SiC Heteroepitaxy on (100), (111) and (110) Si Using Trichlorosilane (TCS) as the Silicon Precursor

Void Formation in Differently Oriented Si in the Early Stage of SiC Growth

Residual Stress Measurement and Simulation of 3C-SiC Single and Poly Crystal Cantilevers

Very High Growth Rate Epitaxy Processes with Chlorine Addition

Residual Stress Measurement on Hetero-Epitaxial 3C-SiC Films

Growth of 3C-SiC on Si: Influence of Process Pressure

Single track regime in ion implanted polystyrene

Optimisation of Epitaxial Layer Growth with HCl Addition by Optical and Electrical Characterization

Film Morphology and Process Conditions in Epitaxial Silicon Carbide Growth via Chlorides Route

Epitaxial Layers Grown with HCl Addition: A Comparison with the Standard Process

Carbonization Study of Different Silicon Orientations

Editorial

High Growth Rate Process in a SiC Horizontal Reactor with HCl Addition: Structural and Electrical Characterization

Optimisation of Epitaxial Layer Growth by Schottky Diodes Electrical Characterization

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