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Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Applied physics letters, 2015-11, Vol.107 (18)

2015

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Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors

Physical review applied, 2017-02, Vol.7 (2), Article 024016

2017

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Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Applied physics letters, 2016-12, Vol.109 (25)

2016

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Monolithically fabricated tunable long-wave infrared detectors based on dynamic graphene metasurfaces

Applied physics letters, 2020-05, Vol.116 (19)

2020

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Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

Applied physics letters, 2016-12, Vol.109 (26)

2016

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Mesa-isolated InGaAs photodetectors with low dark current

Applied physics letters, 2009-07, Vol.95 (3), p.031112-031112-3

2009

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Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers

Applied physics letters, 2016-06, Vol.108 (25)

2016

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Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs 0.91 Sb 0.09 alloy nBn photodetectors

Applied physics letters, 2015-11, Vol.107 (18), p.183504

2015

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Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition

2019 IEEE International Reliability Physics Symposium (IRPS), 2019, p.1-4

2019

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Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors

ECS journal of solid state science and technology, 2017-09, Vol.6 (11), p.S3067-S3071

2017

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(Invited) (ECS Electronics & Photonics Division Award )Wafer-Level Step-Stressing of InGaP/GaAs HBTs

ECS transactions, 2014-03, Vol.61 (4), p.9-19

2014

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Next-generation infrared focal plane arrays for high-responsivity low-noise applications

2017 IEEE Aerospace Conference, 2017, p.1-7

2017

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A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs

ECS transactions, 2013, Vol.50 (6), p.273-282

2013

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Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors

ECS transactions, 2007-04, Vol.6 (2), p.11-22

2007

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Improved infrared detection using nanoantennas

2017 International Conference on Optical MEMS and Nanophotonics (OMN), 2017, p.1-2

2017

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Authorship Contested: Cultural Challenges to the Authentic, Autonomous Author

1, 2016

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Model systems for detecting the hepatic toxicity of pyrrolizidine alkaloids and pyrrolizidine alkaloid N-oxides

Toxicology and applied pharmacology, 1989-11, Vol.101 (2), p.271-284

1989

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Writers Who Forge: Forgery as a Response to Contested Authorship

Authorship Contested, 2016, p.55-68

1, 2016

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Authorial Ethos as Location: How Technical Manuals Embody Authorial Ethos without Authors

Authorship Contested, 2016, p.71-88

1, 2016

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A Gay Girl in Damascus: Multi-vocal Construction and Refutation of Authorial Ethos

Authorship Contested, 2016, p.21-39

1, 2016

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"I Feel Like This Is Fake": Spontaneous Mediocrity and Studied Genius

Authorship Contested, 2016, p.161-171

1, 2016

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The Emotional Contests of Peer Review

Authorship Contested, 2016, p.148-158

1, 2016

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The Kairos of Authorship in Activist Rhetoric

Authorship Contested, 2016, p.89-106

1, 2016

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Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs0.91Sb0.09 alloy nBn photodetectors

Vertical Hole Transport and Carrier Localization in InAs / InAs 1 − x Sb x Type-II Superlattice Heterojunction Bipolar Transistors

Enhanced infrared detectors using resonant structures combined with thin type-II superlattice absorbers

Monolithically fabricated tunable long-wave infrared detectors based on dynamic graphene metasurfaces

Effects of electron doping level on minority carrier lifetimes in n-type mid-wave infrared InAs/InAs1−xSbx type-II superlattices

Mesa-isolated InGaAs photodetectors with low dark current

Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs{sub 1−x}Sb{sub x} type-II superlattices

Optical and electrical properties of narrow-bandgap infrared W-structure superlattices incorporating AlAs/AlSb/AlAs barrier layers

Contactless measurement of equilibrium electron concentrations in n-type InAs/InAs1−xSbx type-II superlattices

Minority carrier lifetime and dark current measurements in mid-wavelength infrared InAs 0.91 Sb 0.09 alloy nBn photodetectors

Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition

Planar Ohmic Contacts to Al 0.45 Ga 0.55 N/Al 0.3 Ga 0.7 N High Electron Mobility Transistors

(Invited) (ECS Electronics & Photonics Division Award )Wafer-Level Step-Stressing of InGaP/GaAs HBTs

Next-generation infrared focal plane arrays for high-responsivity low-noise applications

A Survey of Electrical Signatures Characteristic of Step-Stressed InGaP/GaAs HBTs

Improved Manufacturability of AlGaAs/GaAs Pnp Heterojunction Bipolar Transistors

Improved infrared detection using nanoantennas

Authorship Contested: Cultural Challenges to the Authentic, Autonomous Author

Model systems for detecting the hepatic toxicity of pyrrolizidine alkaloids and pyrrolizidine alkaloid N-oxides

Writers Who Forge: Forgery as a Response to Contested Authorship

Authorial Ethos as Location: How Technical Manuals Embody Authorial Ethos without Authors

A Gay Girl in Damascus: Multi-vocal Construction and Refutation of Authorial Ethos

"I Feel Like This Is Fake": Spontaneous Mediocrity and Studied Genius

The Emotional Contests of Peer Review

The Kairos of Authorship in Activist Rhetoric

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