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N-terminal acetylation inhibits protein targeting to the endoplasmic reticulum

PLoS biology, 2011-05, Vol.9 (5), p.e1001073-e1001073

2011

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Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Physica status solidi. A, Applications and materials science, 2017-04, Vol.214 (4), p.np-n/a

2017

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Surface potential of n - and p -type GaN measured by Kelvin force microscopy

Applied physics letters, 2008-11, Vol.93 (21), p.212107-212107-3

2008

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Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

Journal of crystal growth, 2013-05, Vol.370, p.282-287

2013

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Brain‐targeted stem cell gene therapy corrects mucopolysaccharidosis type II via multiple mechanisms

EMBO molecular medicine, 2018-07, Vol.10 (7), p.1-n/a

2018

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Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN

Journal of physics. D, Applied physics, 2010-02, Vol.43 (5), p.055406

2010

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Descent of the ancient Farallon slab drives localized mantle flow below the New Madrid seismic zone

Geophysical research letters, 2007-02, Vol.34 (4), p.L04308-n/a

2007

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AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

IEEE electron device letters, 2010-01, Vol.31 (1), p.11-13

2010

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Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Solid-state electronics, 2012, Vol.67 (1), p.74-78

2012

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Recent tectonic plate decelerations driven by mantle convection

Geophysical research letters, 2009-12, Vol.36 (23), p.n/a

2009

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Timescales of landscape response to divide migration and drainage capture: Implications for the role of divide mobility in landscape evolution

Journal of geophysical research. Earth surface, 2017-01, Vol.122 (1), p.248-273

2017

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Geodynamic Evidence for a Chemically Depleted Continental Tectosphere

Science (American Association for the Advancement of Science), 2000-12, Vol.290 (5498), p.1940-1944

2000

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High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

IEEE electron device letters, 2009-08, Vol.30 (8), p.808-810

2009

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Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

Semiconductor science and technology, 2015-09, Vol.30 (10), p.105034

2015

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Fundamentals and practice of metal contacts to wide band gap semiconductor devices

Crystal research and technology (1979), 2012-03, Vol.47 (3), p.261-272

2012

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Science Website Traffic in Earthquakes

Seismological research letters, 2017-05, Vol.88 (3), p.867-874

2017

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Late Cenozoic deformation of the Kura fold-thrust belt, southern Greater Caucasus

Geological Society of America bulletin, 2010-03, Vol.122 (3-4), p.465-486

2010

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Gain-of-function mutations in IFIH1 cause a spectrum of human disease phenotypes associated with upregulated type I interferon signaling

Nature genetics, 2014-05, Vol.46 (5), p.503-509

2014

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A new inference of mantle viscosity based upon joint inversion of convection and glacial isostatic adjustment data

Earth and planetary science letters, 2004-08, Vol.225 (1), p.177-189

2004

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Thermal oxidation of lattice matched InAlN/GaN heterostructures

Physica status solidi. C, 2010-01, Vol.7 (1), p.13-16

2010

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LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Physica status solidi. C, 2010-05, Vol.7 (5), p.1317-1324

2010

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Mutations in ADAR1 cause Aicardi-Goutières syndrome associated with a type I interferon signature

Nature genetics, 2012-11, Vol.44 (11), p.1243-1248

2012

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Nitrogen Regulates AMPK to Control TORC1 Signaling

Current biology, 2015-02, Vol.25 (4), p.445-454

2015

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GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

Journal of crystal growth, 2008-11, Vol.310 (23), p.5232-5236

2008

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In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

Journal of crystal growth, 2007, Vol.298, p.826-830

2007

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N-terminal acetylation inhibits protein targeting to the endoplasmic reticulum

Gallium incorporation in InAlN: role of the chamber design and history, and the effects of growth pressure

Surface potential of n - and p -type GaN measured by Kelvin force microscopy

Impact of the substrate and of the nucleation layer on the properties of AlGaN/GaN HEMTs on SiC

Brain‐targeted stem cell gene therapy corrects mucopolysaccharidosis type II via multiple mechanisms

Depth-resolved analysis of spontaneous phase separation in the growth of lattice-matched AlInN

Descent of the ancient Farallon slab drives localized mantle flow below the New Madrid seismic zone

AlInN/AlN/GaN HEMT Technology on SiC With 10-W/mm and 50% PAE at 10 GHz

Influence of processing and annealing steps on electrical properties of InAlN/GaN high electron mobility transistor with Al2O3 gate insulation and passivation

Recent tectonic plate decelerations driven by mantle convection

Timescales of landscape response to divide migration and drainage capture: Implications for the role of divide mobility in landscape evolution

Geodynamic Evidence for a Chemically Depleted Continental Tectosphere

High-Temperature Microwave Performance of Submicron AlGaN/GaN HEMTs on SiC

Low resistive Au-free, Ta-based, recessed ohmic contacts to InAlN AlN GaN heterostructures

Fundamentals and practice of metal contacts to wide band gap semiconductor devices

Science Website Traffic in Earthquakes

Late Cenozoic deformation of the Kura fold-thrust belt, southern Greater Caucasus

Gain-of-function mutations in IFIH1 cause a spectrum of human disease phenotypes associated with upregulated type I interferon signaling

A new inference of mantle viscosity based upon joint inversion of convection and glacial isostatic adjustment data

Thermal oxidation of lattice matched InAlN/GaN heterostructures

LP MOCVD growth of InAlN/GaN HEMT heterostructure: comparison of sapphire, bulk SiC and composite SiCopSiC substrates for HEMT device applications

Mutations in ADAR1 cause Aicardi-Goutières syndrome associated with a type I interferon signature

Nitrogen Regulates AMPK to Control TORC1 Signaling

GaAlN/GaN HEMT heterostructures grown on SiCopSiC composite substrates for HEMT application

In situ epitaxial surface passivation of GaAlN/GaN HEMT heterostructures grown by LP-MOCVD

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