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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

IEEE transactions on electron devices, 2017-11, Vol.64 (11), p.4486-4491

2017

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IEEE_Xplore

Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

Solid-state electronics, 2017-02, Vol.128, p.180-186

2017

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A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

Solid-state electronics, 2016-11, Vol.125, p.103-110

2016

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Sharp Logic Switch Based on Band Modulation

IEEE electron device letters, 2019-11, Vol.40 (11), p.1852-1855

2019

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IEEE_Xplore

Properties and mechanisms of Z2-FET at variable temperature

Solid-state electronics, 2016-01, Vol.115, p.201-206

2016

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Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4904-4909

2017

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FET as Capacitor-Less eDRAM Cell For High-Density Integration

IEEE transactions on electron devices, 2017-12, Vol.64 (12), p.4904-4909

2017

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IEEE_Xplore

Z2-FET: A promising FDSOI device for ESD protection

Solid-state electronics, 2014-07, Vol.97, p.23-29

2014

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Z super(2)-FET: A promising FDSOI device for ESD protection

Solid-state electronics, 2014-07, Vol.97, p.23-29

2014

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4.6\mu \mathrm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

ESSDERC 2021 - IEEE 51st European Solid-State Device Research Conference (ESSDERC), 2021, p.135-138

2021

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Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

Microelectronics and reliability, 2009-12, Vol.49 (12), p.1424-1432

2009

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Modeling a SCR-based protection structure for RF-ESD co-design simulations

2011 IEEE MTT-S International Microwave Symposium, 2011, p.1-4

2011

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IEEE_Xplore

Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain : Electrostatic Discharge Reliability

Microelectronics and reliability, 2009, Vol.49 (12), p.1424-1432

2009

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4.6µm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

ESSCIRC 2021 - IEEE 47th European Solid State Circuits Conference (ESSCIRC), 2021, p.135-138

2021

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Innovative ESD protections for UTBB FD-SOI technology

2013 IEEE International Electron Devices Meeting, 2013, p.7.3.1-7.3.4

2013

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IEEE_Xplore

Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies

2015 37th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2015, p.1-7

2015

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New insights in Z2-FET mechanisms at variable temperature

EUROSOI-ULIS 2015: 2015 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon, 2015, p.153-156

2015

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IEEE_Xplore

Low-Power Z2-FET Capacitorless 1T-DRAM

2017 IEEE International Memory Workshop (IMW), 2017, p.1-4

2017

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Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2014, 2014, p.1-6

2014

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A physics-based compact model for ESD protection diodes under very fast transients

EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium, 2008, p.67-75

2008

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IEEE_Xplore

A scalable compact model of interconnects self-heating in CMOS technology

EOS/ESD 2008 - 2008 30th Electrical Overstress/Electrostatic Discharge Symposium, 2008, p.88-93

2008

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IEEE_Xplore

A novel physical model for the SCR ESD protection device

Electrical Overstress/Electrostatic Discharge Symposium Proceedings 2010, 2010, p.1-10

2010

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IEEE_Xplore

Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

2007 29th Electrical Overstress/Electrostatic Discharge Symposium (EOS/ESD), 2007, p.3A.2-1-3A.2-10

2007

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IEEE_Xplore

Incidence of H1N1 2009 virus infection through the analysis of paired plasma specimens among blood donors, France

PloS one, 2012-03, Vol.7 (3), p.e33056-e33056

2012

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The True Challenge of Giant Marine Reserves [with Response]

Science (American Association for the Advancement of Science), 2013-05, Vol.340 (6134), p.810-811

2013

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Extended Analysis of the Z^ -FET: Operation as Capacitorless eDRAM

Sharp-switching band-modulation back-gated devices in advanced FDSOI technology

A band-modulation device in advanced FDSOI technology: Sharp switching characteristics

Sharp Logic Switch Based on Band Modulation

Properties and mechanisms of Z2-FET at variable temperature

Z2-FET as Capacitor-Less eDRAM Cell For High-Density Integration

FET as Capacitor-Less eDRAM Cell For High-Density Integration

Z2-FET: A promising FDSOI device for ESD protection

Z super(2)-FET: A promising FDSOI device for ESD protection

4.6\mu \mathrm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

Modeling a SCR-based protection structure for RF-ESD co-design simulations

Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain : Electrostatic Discharge Reliability

4.6µm Low Power Indirect Time-of-Flight Pixel Achieving 88.5% Demodulation Contrast at 200MHz for 0.54MPix Depth Camera

Innovative ESD protections for UTBB FD-SOI technology

Innovative high-density ESD protection device in state of the art UTBB FDSOI technologies

New insights in Z2-FET mechanisms at variable temperature

Low-Power Z2-FET Capacitorless 1T-DRAM

Thin-body ESD protections in 28nm UTBB-FDSOI: From static to transient behavior

A physics-based compact model for ESD protection diodes under very fast transients

A scalable compact model of interconnects self-heating in CMOS technology

A novel physical model for the SCR ESD protection device

Characterization of the transient behavior of gated/STI diodes and their associated BJT in the CDM time domain

Incidence of H1N1 2009 virus infection through the analysis of paired plasma specimens among blood donors, France

The True Challenge of Giant Marine Reserves [with Response]

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