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Material characterization during the fabrication of silicon nuclear detectors

Radecs 91: Radiation : Effects on Components and Systems :First European Conference on Radiation and Its Effects on Devices and Systems : LA Grande, 1992

1992

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A simple procedure based on the PCD method for determination of recombination lifetime and surface recombination velocity in silicon

Measurement science & technology, 1994-01, Vol.5 (1), p.47-50

1994

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Single sided x- y position sensitive silicon strip detector: a different approach

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1994-09, Vol.348 (2), p.428-430

1994

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Characterization of silicon during the fabrication of nuclear detectors by the planar process

Nuclear instruments & methods in physics research. Section A, Accelerators, spectrometers, detectors and associated equipment, 1993-03, Vol.326 (1), p.10-15

1993

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