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Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gap

Applied physics letters, 2001-09, Vol.79 (12), p.1894-1896

2001

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High optical quality GaN nanopillar arrays

Applied physics letters, 2005-02, Vol.86 (7), p.071917-071917-3

2005

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Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

Applied physics letters, 2005-12, Vol.87 (25)

2005

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Fabrication and properties of nanoporous GaN films

Applied physics letters, 2004-08, Vol.85 (5), p.816-818

2004

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Very large radiative transfer over small distances from a black body for thermophotovoltaic applications

IEEE transactions on electron devices, 2000-01, Vol.47 (1), p.241-249

2000

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RCE photodetectors based on VCSEL structures

IEEE photonics technology letters, 1999-10, Vol.11 (10), p.1289-1291

1999

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Three-dimensional multiwaveguide probe array for light delivery to distributed brain circuits

Optics letters, 2012-12, Vol.37 (23), p.4841

2012

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Physical model of depletion and accumulation in quantum-well infrared photodetectors

IEEE journal of quantum electronics, 1999-11, Vol.35 (11), p.1673-1684

1999

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Epitaxial growth of high quality AlGaAs/GaAs structures on atomically flat GaAs surfaces in deep dielectric windows cleaned using atomic hydrogen

Thin solid films, 2002, Vol.402 (1), p.43-48

2002

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Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth

Applied physics letters, 2006-05, Vol.88 (21)

2006

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InGaN nanorings and nanodots by selective area epitaxy

Applied physics letters, 2005-10, Vol.87 (14), p.143111-143111-3

2005

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Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wells

Applied physics letters, 1992-10, Vol.61 (17), p.2078-2080

1992

Volltextzugriff (PDF)

Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells

Applied physics letters, 1994-02, Vol.64 (8), p.986-987

1994

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Practical OEICs based on the monolithic integration of GaAs-InGaP LEDs with commercial GaAs VLSI electronics

IEEE journal of quantum electronics, 1998-07, Vol.34 (7), p.1117-1123

1998

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Optical properties of (100)- and (111)-oriented GaInAs/GaAs strained-layer superlattices

Physical review letters, 1989-02, Vol.62 (6), p.649-652

1989

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Theoretical gain of strained-layer semiconductor lasers in the large strain regime

IEEE journal of quantum electronics, 1989-02, Vol.25 (2), p.171-178

1989

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Bromine ion-beam-assisted etching of III-V semiconductors

Journal of electronic materials, 1999-04, Vol.28 (4), p.364-368

1999

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Integration of Edge-Emitting Laser Diodes With Dielectric Waveguides on Silicon

IEEE photonics technology letters, 2012-10, Vol.24 (20), p.1849-1851

2012

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The impact of CMP and underlying back-end topographical features on losses in deposited dielectric waveguides

IEEE journal of quantum electronics, 2004-12, Vol.40 (12), p.1709-1714

2004

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Theory, fabrication and characterization of quantum well infrared photodetectors

Materials science & engineering. R, Reports : a review journal, 2000-07, Vol.28 (3), p.65-147

2000

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Strain effects in the intersubband transitions of narrow InGaAs quantum wells

Applied physics letters, 1993-05, Vol.62 (19), p.2413-2415

1993

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Preparation of silicon-on-gallium arsenide wafers for monolithic optoelectronic integration

IEEE photonics technology letters, 1999-08, Vol.11 (8), p.958-960

1999

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Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: application to pseudomorphic heterostructures

Applied physics letters, 1987-10, Vol.51 (15), p.1173-1175

1987

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Monolithic optoelectronic circuit design and fabrication by epitaxial growth on commercial VLSI GaAs MESFET's

IEEE photonics technology letters, 1995-05, Vol.7 (5), p.508-510

1995

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Continuous-Wave Electrically Pumped 1.55-$\mu$m Edge-Emitting Platelet Ridge Laser Diodes on Silicon

IEEE photonics technology letters, 2009-07, Vol.21 (13), p.827-829

2009

Volltextzugriff (PDF)

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Enhanced photogeneration of carriers in a semiconductor via coupling across a nonisothermal nanoscale vacuum gap

High optical quality GaN nanopillar arrays

Nanoair-bridged lateral overgrowth of GaN on ordered nanoporous GaN template

Fabrication and properties of nanoporous GaN films

Very large radiative transfer over small distances from a black body for thermophotovoltaic applications

RCE photodetectors based on VCSEL structures

Three-dimensional multiwaveguide probe array for light delivery to distributed brain circuits

Physical model of depletion and accumulation in quantum-well infrared photodetectors

Epitaxial growth of high quality AlGaAs/GaAs structures on atomically flat GaAs surfaces in deep dielectric windows cleaned using atomic hydrogen

Improvement of microstructural and optical properties of GaN layer on sapphire by nanoscale lateral epitaxial overgrowth

InGaN nanorings and nanodots by selective area epitaxy

Transverse electric and transverse magnetic polarization active intersubband transitions in narrow InGaAs quantum wells

Electron intersubband transitions to 0.8 eV (1.55 μm) in InGaAs/AlAs single quantum wells

Practical OEICs based on the monolithic integration of GaAs-InGaP LEDs with commercial GaAs VLSI electronics

Optical properties of (100)- and (111)-oriented GaInAs/GaAs strained-layer superlattices

Theoretical gain of strained-layer semiconductor lasers in the large strain regime

Bromine ion-beam-assisted etching of III-V semiconductors

Integration of Edge-Emitting Laser Diodes With Dielectric Waveguides on Silicon

The impact of CMP and underlying back-end topographical features on losses in deposited dielectric waveguides

Theory, fabrication and characterization of quantum well infrared photodetectors

Strain effects in the intersubband transitions of narrow InGaAs quantum wells

Preparation of silicon-on-gallium arsenide wafers for monolithic optoelectronic integration

Reflection high-energy electron diffraction intensity oscillation study of InGaAs and InAlAs on InP: application to pseudomorphic heterostructures

Monolithic optoelectronic circuit design and fabrication by epitaxial growth on commercial VLSI GaAs MESFET's

Continuous-Wave Electrically Pumped 1.55-$\mu$m Edge-Emitting Platelet Ridge Laser Diodes on Silicon

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