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High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

IEEE electron device letters, 2005-12, Vol.26 (12), p.900-902

2005

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IEEE_Xplore

The Nanoscale Silicon Accumulation-Mode MOSFET-A Comprehensive Numerical Study

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2946-2959

2008

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IEEE_Xplore

A rapid-response, high-sensitivity nanophase humidity sensor for respiratory monitoring

IEEE electron device letters, 2004-08, Vol.25 (8), p.526-528

2004

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IEEE_Xplore

High-performance poly-Si TFTs on plastic substrates using a nano-structured separation layer approach

IEEE electron device letters, 2003-01, Vol.24 (1), p.19-21

2003

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IEEE_Xplore

Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

IEEE electron device letters, 2001-08, Vol.22 (8), p.399-401

2001

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IEEE_Xplore

High-performance p-channel poly-Si TFT's using electron cyclotron resonance hydrogen plasma passivation

IEEE electron device letters, 1994-12, Vol.15 (12), p.502-503

1994

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IEEE_Xplore

Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

IEEE electron device letters, 1996-08, Vol.17 (8), p.388-390

1996

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IEEE_Xplore

Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching

IEEE electron device letters, 1997-10, Vol.18 (10), p.495-498

1997

Link zum Volltext
IEEE_Xplore

Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching

IEEE electron device letters, 1994-10, Vol.15 (10), p.396-398

1994

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IEEE_Xplore

A study of Pd/Si MIS Schottky barrier diode hydrogen detector

IEEE transactions on electron devices, 1981-09, Vol.28 (9), p.1003-1009

1981

Link zum Volltext
IEEE_Xplore

Solar Cell Device Physics

Fonash, Stephen J

1, 1981

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The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167), 2001, p.308-314

2001

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IEEE_Xplore

Formation of Nanostructured Polymer Filaments in Nanochannels

Journal of the American Chemical Society, 2003-08, Vol.125 (31), p.9298-9299

2003

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High-barrier Schottky diodes on p-type silicon due to dry-etching damage

IEEE electron device letters, 1985-08, Vol.6 (8), p.410-412

1985

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IEEE_Xplore

Impact of polysilicon dry etching on 0.5 /spl mu/m NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage

IEEE electron device letters, 1994-02, Vol.15 (2), p.48-50

1994

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Electrical characterization of the Si substrate in magnetically enhanced or conventional reactive-ion-etch-exposed SiO/sub 2//p-Si structures

IEEE electron device letters, 1993-04, Vol.14 (4), p.167-169

1993

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IEEE_Xplore

Passivation of dry-etching damage using low-energy hydrogen implants

IEEE electron device letters, 1983-12, Vol.4 (12), p.432-435

1983

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IEEE_Xplore

Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells

Journal of applied physics, 1991-05, Vol.69 (10), p.7057-7066

1991

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Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Solid-state electronics, 2002-06, Vol.46 (6), p.837-845

2002

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Range of validity of the surface-photovoltage diffusion length measurement: a computer simulation

Journal of applied physics, 1988-08, Vol.64 (3), p.1254-1265

1988

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The Si-SiO2 system

Materials research bulletin, 1989-05, Vol.24 (5), p.647

Fonash, S.J.

1989

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Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition

Solid-state electronics, 2003-05, Vol.47 (5), p.899-905

2003

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Effect of contact barrier heights on a -Si:H p - i - n detector and solar-cell performance

Journal of applied physics, 1992-08, Vol.72 (4), p.1621-1630

1992

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The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

Solid-state electronics, 2001-05, Vol.45 (5), p.655-661

2001

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TEM Examination on the Microstructure Rearrangement of ECRPVECD Nc-Si Thin Films Caused By Low Temperature Annealing

Microscopy and microanalysis, 1999-08, Vol.5 (S2), p.844-845

1999

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High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

The Nanoscale Silicon Accumulation-Mode MOSFET-A Comprehensive Numerical Study

A rapid-response, high-sensitivity nanophase humidity sensor for respiratory monitoring

High-performance poly-Si TFTs on plastic substrates using a nano-structured separation layer approach

Fabrication of microcrystalline silicon TFTs using a high-density plasma approach

High-performance p-channel poly-Si TFT's using electron cyclotron resonance hydrogen plasma passivation

Soft-breakdown damage in MOSFET's due to high-density plasma etching exposure

Cyclic current-voltage characterization applied to edge damage evaluation in gate definition plasma etching

Degradation of submicron N-channel MOSFET hot electron reliability due to edge damage from polysilicon gate plasma etching

A study of Pd/Si MIS Schottky barrier diode hydrogen detector

Solar Cell Device Physics

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Formation of Nanostructured Polymer Filaments in Nanochannels

High-barrier Schottky diodes on p-type silicon due to dry-etching damage

Impact of polysilicon dry etching on 0.5 /spl mu/m NMOS transistor performance: the presence of both plasma bombardment damage and plasma charging damage

Electrical characterization of the Si substrate in magnetically enhanced or conventional reactive-ion-etch-exposed SiO/sub 2//p-Si structures

Passivation of dry-etching damage using low-energy hydrogen implants

Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells

Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Range of validity of the surface-photovoltage diffusion length measurement: a computer simulation

The Si-SiO2 system

Electrical properties of the gate oxide and its interface with Si in U-shaped trench MOS capacitors: The impact of polycrystalline Si doping and oxide composition

Effect of contact barrier heights on a -Si:H p - i - n detector and solar-cell performance

The effects of channel boron-doping on the performance and hot electron reliability of N-channel trench UMOSFETs

TEM Examination on the Microstructure Rearrangement of ECRPVECD Nc-Si Thin Films Caused By Low Temperature Annealing

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