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Solar cell device physics

Fonash, Stephen

2nd ed., 2010

Volltextzugriff (PDF)

Introduction to Light Trapping in Solar Cell and Photo-detector Devices

Fonash, Stephen J

1, 2014

Volltextzugriff (PDF)

Solar Cell Device Physics, 2nd Edition

Fonash, S. J

2nd ed., 2010

Volltextzugriff (PDF)

Desorption−Ionization Mass Spectrometry Using Deposited Nanostructured Silicon Films

Analytical chemistry (Washington), 2001-03, Vol.73 (6), p.1292-1295

2001

Volltextzugriff (PDF)

High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

IEEE electron device letters, 2005-12, Vol.26 (12), p.900-902

2005

Volltextzugriff (PDF)

Low thermal budget poly-Si thin film transistors on glass

Japanese Journal of Applied Physics, 1991-02, Vol.30 (2B), p.L269-L271

1991

Volltextzugriff (PDF)

Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon

Journal of applied physics, 1989-03, Vol.65 (5), p.2069-2072

1989

Volltextzugriff (PDF)

Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells

Journal of applied physics, 1991-05, Vol.69 (10), p.7057-7066

1991

Volltextzugriff (PDF)

Range of validity of the surface-photovoltage diffusion length measurement: a computer simulation

Journal of applied physics, 1988-08, Vol.64 (3), p.1254-1265

1988

Volltextzugriff (PDF)

Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing

Applied physics letters, 1989-08, Vol.55 (7), p.660-662

1989

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The dependence of UMOSFET characteristics and reliability on geometry and processing

Semiconductor science and technology, 2001-06, Vol.16 (6), p.447-454

2001

Volltextzugriff (PDF)

Origins of reverse bias leakage currents in hydrogenated amorphous silicon p-i-n detector structures

Applied physics letters, 1992-02, Vol.60 (6), p.757-759

1992

Volltextzugriff (PDF)

Nano- and microchannel fabrication using column/void network deposited silicon

Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, 2001-07, Vol.19 (4), p.1229-1233

2001

Volltextzugriff (PDF)

Solar Cell Device Physics

Fonash, Stephen J

1, 1981

Volltextzugriff (PDF)

AMPS-1D simulation examination of the measured performance of a PbSe QD tandem solar cell structure

2013 IEEE 39th Photovoltaic Specialists Conference (PVSC), 2013, p.0300-0302

2013

Volltextzugriff (PDF)

A rapid-response, high-sensitivity nanophase humidity sensor for respiratory monitoring

IEEE electron device letters, 2004-08, Vol.25 (8), p.526-528

2004

Volltextzugriff (PDF)

Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin-film transistor structures

Applied physics letters, 1990-03, Vol.56 (12), p.1140-1142

1990

Volltextzugriff (PDF)

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

IEEE transactions on nuclear science, 1992-12, Vol.39 (6), p.1730-1738

1992

Volltextzugriff (PDF)

A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodes

Journal of applied physics, 1983-04, Vol.54 (4), p.1966-1975

Fonash, S. J.

1983

Volltextzugriff (PDF)

Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Solid-state electronics, 2002-06, Vol.46 (6), p.837-845

2002

Volltextzugriff (PDF)

Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films

Journal of applied physics, 1989-09, Vol.66 (6), p.2765-2767

1989

Volltextzugriff (PDF)

Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n -channel transistors: Latent defects and passivation/depassivation of defects by hydrogen

Journal of applied physics, 1996-01, Vol.79 (1), p.517-525

1996

Volltextzugriff (PDF)

Effect of contact barrier heights on a -Si:H p - i - n detector and solar-cell performance

Journal of applied physics, 1992-08, Vol.72 (4), p.1621-1630

1992

Volltextzugriff (PDF)

Quantum efficiencies greater than unity : a computer study of a photogating effect in amorphous silicon p-i-n devices

Applied physics letters, 1992-07, Vol.61 (2), p.186-188

1992

Volltextzugriff (PDF)

Using reverse bias currents to differentiate between bulk degradation and interfacial degradation in hydrogenated amorphous silicon p - i - n structures

Journal of applied physics, 1992-11, Vol.72 (9), p.4483-4485

1992

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Solar cell device physics

Introduction to Light Trapping in Solar Cell and Photo-detector Devices

Solar Cell Device Physics, 2nd Edition

Desorption−Ionization Mass Spectrometry Using Deposited Nanostructured Silicon Films

High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

Low thermal budget poly-Si thin film transistors on glass

Crystallized Si films by low-temperature rapid thermal annealing of amorphous silicon

Computer analysis of the role of p-layer quality, thickness, transport mechanisms, and contact barrier height in the performance of hydrogenated amorphous silicon p-i-n solar cells

Range of validity of the surface-photovoltage diffusion length measurement: a computer simulation

Selective area crystallization of amorphous silicon films by low-temperature rapid thermal annealing

The dependence of UMOSFET characteristics and reliability on geometry and processing

Origins of reverse bias leakage currents in hydrogenated amorphous silicon p-i-n detector structures

Nano- and microchannel fabrication using column/void network deposited silicon

Solar Cell Device Physics

AMPS-1D simulation examination of the measured performance of a PbSe QD tandem solar cell structure

A rapid-response, high-sensitivity nanophase humidity sensor for respiratory monitoring

Short time electron cyclotron resonance hydrogenation of polycrystalline silicon thin-film transistor structures

Investigation of the oxygen-vacancy (A-center) defect complex profile in neutron irradiated high resistivity silicon junction particle detectors

A reevaluation of the meaning of capacitance plots for Schottky-barrier-type diodes

Electron and hole trapping in the bulk and interface with Si of a thermal oxide grown on the sidewalls and base of a U-shaped silicon trench

Stability of electrical properties of nitrogen-rich, silicon-rich, and stoichiometric silicon nitride films

Plasma-charging damage to gate SiO2 and SiO2/Si interfaces in submicron n -channel transistors: Latent defects and passivation/depassivation of defects by hydrogen

Effect of contact barrier heights on a -Si:H p - i - n detector and solar-cell performance

Quantum efficiencies greater than unity : a computer study of a photogating effect in amorphous silicon p-i-n devices

Using reverse bias currents to differentiate between bulk degradation and interfacial degradation in hydrogenated amorphous silicon p - i - n structures

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