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Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL

IEEE photonics technology letters, 2021-01, Vol.33 (2), p.69-72

2021

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Electroswitchable red-NIR luminescence of ionic clustomesogen containing nematic liquid crystalline devices

Journal of materials chemistry. C, Materials for optical and electronic devices, 2015-01, Vol.3 (20), p.5152-5161

2015

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High-gain and low-threshold InAs quantum-dot lasers on InP

Applied physics letters, 2005-12, Vol.87 (24), p.243107-243107-3

2005

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Electronic, optical, and structural properties of (In,Ga)As/GaP quantum dots

Physical review. B, Condensed matter and materials physics, 2012-11, Vol.86 (20), Article 205316

2012

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An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells

Journal of physics. Condensed matter, 2016-07, Vol.28 (28), p.284002-284002

2016

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Structural and electronic properties of BAs and BxGa1−xAs, BxIn1−xAs alloys

Physica. B, Condensed matter, 2005-07, Vol.364 (1-4), p.263-272

2005

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Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy

Journal of applied physics, 2011-05, Vol.109 (10), p.102413-102413-6

2011

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Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substrate

Acta materialia, 2010-05, Vol.58 (9), p.3238-3246

2010

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Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure

Nanotechnology, 2011-02, Vol.22 (5), p.055703-055703

2011

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Resonance tuning of two-photon absorption microcavities for wavelength-selective pulse monitoring

IEEE photonics technology letters, 2006-01, Vol.18 (2), p.433-435

2006

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Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Materials science & engineering. B, Solid-state materials for advanced technology, 2012-06, Vol.177 (11), p.882-886

2012

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Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

Applied physics letters, 2007-12, Vol.91 (26)

2007

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Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

Journal of physics. D, Applied physics, 2008-08, Vol.41 (16), p.165505-165505 (8)

2008

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Time-resolved pump probe of 1.55μm InAs∕InP quantum dots under high resonant excitation

Applied physics letters, 2006-04, Vol.88 (17)

2006

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Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Physical review. B, Condensed matter and materials physics, 2006-12, Vol.74 (24), Article 245315

2006

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Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities

Applied physics letters, 2002-02, Vol.80 (8), p.1328-1330

2002

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Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Journal of crystal growth, 2003-04, Vol.251 (1), p.230-235

2003

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Optical signal processing via two-photon absorption in a semiconductor microcavity for the next generation of high-speed optical communications network

Journal of lightwave technology, 2006-07, Vol.24 (7), p.2683-2692

2006

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290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55μm range

Applied physics letters, 2004-12, Vol.85 (24), p.5926-5928

2004

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Impact of the capping layers on lateral confinement in InAs ∕ InP quantum dots for 1.55 μ m laser applications studied by magnetophotoluminescence

Applied physics letters, 2005-12, Vol.87 (23), p.233111-233111-3

2005

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Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength

Applied physics letters, 2004-12, Vol.85 (23), p.5685-5687

2004

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Effect of holes on the dynamic polarization of nuclei in semiconductors

Physical review. B, Condensed matter and materials physics, 2006-03, Vol.73 (12), Article 121202

2006

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Chromatic Dispersion Monitoring of 80-Gb/s OTDM Data Signal via Two-Photon Absorption in a Semiconductor Microcavity

IEEE photonics technology letters, 2007-01, Vol.19 (1), p.21-23

2007

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Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Semiconductor science and technology, 2005-05, Vol.20 (5), p.459-463

2005

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Optical properties and morphology of InAs∕InP (113)B surface quantum dots

Applied physics letters, 2008-06, Vol.92 (23), p.3

2008

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Low Threshold 1550-nm Emitting QD Optically Pumped VCSEL

Electroswitchable red-NIR luminescence of ionic clustomesogen containing nematic liquid crystalline devices

High-gain and low-threshold InAs quantum-dot lasers on InP

Electronic, optical, and structural properties of (In,Ga)As/GaP quantum dots

An atomic scale study of surface termination and digital alloy growth in InGaAs/AlAsSb multi-quantum wells

Structural and electronic properties of BAs and BxGa1−xAs, BxIn1−xAs alloys

Shape control of quantum dots studied by cross-sectional scanning tunneling microscopy

Analysis by high-resolution electron microscopy of elastic strain in thick InAs layers embedded in Ga0.47In0.53As buffers on InP(0 0 1) substrate

Shape and size control of InAs/InP (113)B quantum dots by Sb deposition during the capping procedure

Resonance tuning of two-photon absorption microcavities for wavelength-selective pulse monitoring

Thermal conductivity of InAs quantum dot stacks using AlAs strain compensating layers on InP substrate

Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

Theoretical study of highly strained InAs material from first-principles modelling: application to an ideal QD

Time-resolved pump probe of 1.55μm InAs∕InP quantum dots under high resonant excitation

Increase of charge-carrier redistribution efficiency in a laterally organized superlattice of coupled quantum dots

Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities

Growth and optical characterizations of InAs quantum dots on InP substrate: towards a 1.55 μm quantum dot laser

Optical signal processing via two-photon absorption in a semiconductor microcavity for the next generation of high-speed optical communications network

290 fs switching time of Fe-doped quantum well saturable absorbers in a microcavity in 1.55μm range

Impact of the capping layers on lateral confinement in InAs ∕ InP quantum dots for 1.55 μ m laser applications studied by magnetophotoluminescence

Quantitative investigations of optical absorption in InAs∕InP(311)B quantum dots emitting at 1.55μm wavelength

Effect of holes on the dynamic polarization of nuclei in semiconductors

Chromatic Dispersion Monitoring of 80-Gb/s OTDM Data Signal via Two-Photon Absorption in a Semiconductor Microcavity

Comparison of InAs quantum dot lasers emitting at 1.55 μm under optical and electrical injection

Optical properties and morphology of InAs∕InP (113)B surface quantum dots

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