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Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-01, Vol.26 (1), p.298-304

2008

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Evolution of arsenic in high fluence plasma immersion ion implanted silicon: Behavior of the as-implanted surface

CH4/H2 : a universal reactive ion etch for II-VI semiconductors ?

Model for conductance in dry-etch damaged n-GaAs structures

Reactive ion etching of II-VI semiconductors using a mixture of methane and hydrogen

Optimization of advanced PMOS junctions using Ge, B and F co-implants

Reactive ion etching induced damage in GaAs and Al0.3Ga0.7As using SiCl4

High-resolution dry etching of zinc telluride: characterization of etched surfaces by X-ray photoelectron spectroscopy, photoluminescence and Raman scattering

90 nm device validation of the use of a single-wafer, high-current implanter for high tilt halo implants

Low energy electron induced X-ray emission spectrometry (LEXES) and secondary ion mass spectrometry (SIMS) sensitivity studies to ultra shallow arsenic implants

Integration of Advanced Source and Drain Extension Process Using Carbon/Fluorine Co-Implants and Spike Anneal in 65nm PMOS Devices

Nanometer fabrication techniques for wide-gap II-VI semiconductors and their optical characterization

Deactivation of low energy Boron Implants into Pre-amorphised Si after Non-Melt Laser Annealing with Multiple Scans

Elemental B distributions and clustering in low-energy B+ ion-implanted Si

Anomalous Diffusion of Ultra low Energy Boron Implants in Silicon

Optical assessment of reactive ion etched ZnTe and ZnSe for nanostructures

Deactivation of ultrashallow boron implants in preamorphized silicon after nonmelt laser annealing with multiple scans

Optimization of Fluorine Co-implantation for PMOS Source and Drain Extension Formation for 65nm Technology Node

The production and use of ultralow energy ion beams

Experimental evidence of B clustering in amorphous Si during ultrashallow junction formation

Raman scattering of coupled longitudinal optical phonon-plasmon modes in dry etched n+-GaAs

An EXAFS investigation of arsenic shallow implant activation in silicon after laser sub-melt annealing

Optimizing boron junctions through point defect and stress engineering using carbon and germanium co-implants

Mechanism of Boron Diffusion in Silicon: An Ab Initio and Kinetic Monte Carlo Study

Practical Aspects of Forming Ultra-Shallow Junctions by Sub-keV Boron Implants

Characterization of an ultrashallow junction structure using angle resolved x-ray photoelectron spectroscopy and medium energy ion scattering

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