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Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1706-1730

Fleetwood, D. M.

2013

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1/f Noise and Defects in Microelectronic Materials and Devices

IEEE transactions on nuclear science, 2015-08, Vol.62 (4), p.1462-1486

Fleetwood, D. M.

2015

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Evolution of Total Ionizing Dose Effects in MOS Devices With Moore's Law Scaling

IEEE transactions on nuclear science, 2018-08, Vol.65 (8), p.1465-1481

Fleetwood, Daniel M.

2018

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Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies

IEEE transactions on nuclear science, 2020-07, Vol.67 (7), p.1216-1240

Fleetwood, Daniel M.

2020

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Radiation Effects in a Post-Moore World

IEEE transactions on nuclear science, 2021-05, Vol.68 (5), p.509-545

Fleetwood, Daniel M.

2021

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Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

Applied physics letters, 2023-04, Vol.122 (17)

Fleetwood, D. M.

2023

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Low-frequency noise in nanowires

Nanoscale, 2023-07, Vol.15 (29), p.12175-12192

Fleetwood, Daniel M

2023

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Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices

Applied physics letters, 2022-08, Vol.121 (7)

Fleetwood, D. M.

2022

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Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

IEEE transactions on nuclear science, 2013-06, Vol.60 (3), p.1970-1991

2013

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Effects of Bias and Temperature on Interface-Trap Annealing in MOS and Linear Bipolar Devices

IEEE transactions on nuclear science, 2022-03, Vol.69 (3), p.587-608

Fleetwood, Daniel M.

2022

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EP2 receptor antagonism reduces peripheral and central hyperalgesia in a preclinical mouse model of endometriosis

Scientific reports, 2017-03, Vol.7 (1), p.44169-44169, Article 44169

2017

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Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2918-2924

2011

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Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation

Applied physics letters, 2023-04, Vol.122 (17)

2023

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Analgesia Mediated by the TRPM8 Cold Receptor in Chronic Neuropathic Pain

Current biology, 2006-08, Vol.16 (16), p.1591-1605

2006

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Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4074-4079

2013

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Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

IEEE transactions on electron devices, 2014-05, Vol.61 (5), p.1316-1320

2014

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Citation Impact of Outstanding Conference Papers of the IEEE Nuclear and Space Radiation Effects Conference

IEEE transactions on nuclear science, 2021-03, Vol.68 (3), p.325-337

Fleetwood, Daniel M.

2021

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Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Journal of applied physics, 2016-04, Vol.119 (16)

2016

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Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

IEEE transactions on nuclear science, 2017-08, Vol.64 (8), p.2122-2128

2017

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Bias Dependence of Total-Dose Effects in Bulk FinFETs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4476-4482

2013

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Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation

IEEE transactions on nuclear science, 2017-09, Vol.64 (9), p.2511-2518

2017

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Charge Trapping in Al2O3/ \beta -Ga2O3-Based MOS Capacitors

IEEE electron device letters, 2018-07, Vol.39 (7), p.1022-1025

2018

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Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

Applied physics letters, 2012-09, Vol.101 (12)

2012

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Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Applied physics letters, 2015-01, Vol.106 (2)

2015

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Total Ionizing Dose Effects in MOS and Low-Dose-Rate-Sensitive Linear-Bipolar Devices

1/f Noise and Defects in Microelectronic Materials and Devices

Evolution of Total Ionizing Dose Effects in MOS Devices With Moore's Law Scaling

Total-Ionizing-Dose Effects, Border Traps, and 1/f Noise in Emerging MOS Technologies

Radiation Effects in a Post-Moore World

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

Low-frequency noise in nanowires

Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices

Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors

Effects of Bias and Temperature on Interface-Trap Annealing in MOS and Linear Bipolar Devices

EP2 receptor antagonism reduces peripheral and central hyperalgesia in a preclinical mouse model of endometriosis

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation

Analgesia Mediated by the TRPM8 Cold Receptor in Chronic Neuropathic Pain

Total-Ionizing-Dose Radiation Effects in AlGaN/GaN HEMTs and MOS-HEMTs

Gate Bias Dependence of Defect-Mediated Hot-Carrier Degradation in GaN HEMTs

Citation Impact of Outstanding Conference Papers of the IEEE Nuclear and Space Radiation Effects Conference

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Effects of Temperature and Supply Voltage on SEU- and SET-Induced Errors in Bulk 40-nm Sequential Circuits

Bias Dependence of Total-Dose Effects in Bulk FinFETs

Single-Event Multiple Transients in Conventional and Guard-Ring Hardened Inverter Chains Under Pulsed Laser and Heavy-Ion Irradiation

Charge Trapping in Al2O3/ \beta -Ga2O3-Based MOS Capacitors

Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

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