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1/f Noise and Defects in Microelectronic Materials and Devices

IEEE transactions on nuclear science, 2015-08, Vol.62 (4), p.1462-1486

Fleetwood, D. M.

2015

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Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

Applied physics letters, 2023-04, Vol.122 (17)

Fleetwood, D. M.

2023

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Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

Nanoscale, 2019-04, Vol.11 (17), p.838-8386

2019

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Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2918-2924

2011

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Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices

Applied physics letters, 2022-08, Vol.121 (7)

Fleetwood, D. M.

2022

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Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

Applied physics letters, 2015-02, Vol.106 (5)

2015

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Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Journal of applied physics, 2016-04, Vol.119 (16)

2016

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Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation

Applied physics letters, 2023-04, Vol.122 (17)

2023

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Bias Dependence of Total-Dose Effects in Bulk FinFETs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4476-4482

2013

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IEEE_Xplore

Electron-Induced Single-Event Upsets in Static Random Access Memory

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4122-4129

2013

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IEEE_Xplore

Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

Applied physics letters, 2012-09, Vol.101 (12)

2012

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Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

Applied physics letters, 2015-01, Vol.106 (2)

2015

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The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3087-3092

2012

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IEEE_Xplore

Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2674-2681

2012

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IEEE_Xplore

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

IEEE transactions on nuclear science, 2008-12, Vol.55 (6), p.2943-2947

2008

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IEEE_Xplore

Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4470-4475

2013

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IEEE_Xplore

Radiation effects in new materials for nano-devices

Microelectronic engineering, 2011-07, Vol.88 (7), p.1259-1264

2011

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Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

IEEE transactions on nuclear science, 2013-12, Vol.60 (6), p.4498-4504

2013

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IEEE_Xplore

Statistical Analysis of Soft Error Rate in Digital Logic Design Including Process Variations

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2811-2817

2012

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IEEE_Xplore

Physical mechanisms of negative-bias temperature instability

Applied physics letters, 2005-04, Vol.86 (14), p.142103-142103-3

2005

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Mechanisms of Interface Trap Buildup and Annealing During Elevated Temperature Irradiation

IEEE transactions on nuclear science, 2011-12, Vol.58 (6), p.2930-2936

2011

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IEEE_Xplore

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.2966-2973

2012

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IEEE_Xplore

Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2

Physical review letters, 2002-12, Vol.89 (28 Pt 1), p.285505-285505

2002

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Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

IEEE transactions on nuclear science, 2012-12, Vol.59 (6), p.3062-3068

2012

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IEEE_Xplore

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

Applied physics letters, 2024-03, Vol.124 (13)

2024

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1/f Noise and Defects in Microelectronic Materials and Devices

Interface traps, correlated mobility fluctuations, and low-frequency noise in metal–oxide–semiconductor transistors

Proton-irradiation-immune electronics implemented with two-dimensional charge-density-wave devices

Radiation-Induced Defect Evolution and Electrical Degradation of AlGaN/GaN High-Electron-Mobility Transistors

Perspective on radiation effects in nanoscale metal–oxide–semiconductor devices

Role of Fe impurity complexes in the degradation of GaN/AlGaN high-electron-mobility transistors

Correlation of proton irradiation induced threshold voltage shifts to deep level traps in AlGaN/GaN heterostructures

Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation

Bias Dependence of Total-Dose Effects in Bulk FinFETs

Electron-Induced Single-Event Upsets in Static Random Access Memory

Ozone-exposure and annealing effects on graphene-on-SiO2 transistors

Proton irradiation effects on deep level states in Mg-doped p-type GaN grown by ammonia-based molecular beam epitaxy

The Effects of Proton-Defect Interactions on Radiation-Induced Interface-Trap Formation and Annealing

Heavy-Ion-Induced Current Transients in Bulk and SOI FinFETs

Characterizing SRAM Single Event Upset in Terms of Single and Multiple Node Charge Collection

Time-Domain Reflectometry Measurements of Total-Ionizing-Dose Degradation of n MOSFETs

Radiation effects in new materials for nano-devices

Sensitivity of High-Frequency RF Circuits to Total Ionizing Dose Degradation

Statistical Analysis of Soft Error Rate in Digital Logic Design Including Process Variations

Physical mechanisms of negative-bias temperature instability

Mechanisms of Interface Trap Buildup and Annealing During Elevated Temperature Irradiation

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

Structure, properties, and dynamics of oxygen vacancies in amorphous SiO2

Charge Pumping Measurements of Radiation-Induced Interface-Trap Density in Floating-Body SOI FinFETs

Single-event burnout in homojunction GaN vertical PiN diodes with hybrid edge termination design

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