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Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

Microelectronic engineering, 2010-03, Vol.87 (3), p.301-305

2010

Volltextzugriff (PDF)

Intercomparison of permittivity measurement techniques for ferroelectric thin layers

Journal of applied physics, 2014-01, Vol.115 (2)

2014

Volltextzugriff (PDF)

RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits

Microelectronic engineering, 2014-11, Vol.130, p.74-81

2014

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Ferroelectric properties of Pb ( Zr , Ti ) O 3 thin films until 40 GHz

Applied physics letters, 2009-02, Vol.94 (5), p.052901-052901-3

2009

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RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking

Microelectronic engineering, 2010-03, Vol.87 (3), p.491-495

2010

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Ferroelectric properties of Pb(Zr,Ti)O3 thin films until 40 GHz

Applied physics letters, 2009-02, Vol.94 (5)

2009

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Performance predictions of interconnect networks for advanced technology nodes

Microelectronic engineering, 2010-03, Vol.87 (3), p.321-323

2010

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Characterization and modeling of RF substrate coupling effects in 3D integrated circuit stacking

Microelectronic engineering, 2011-05, Vol.88 (5), p.729-733

2011

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Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

IEEE electron device letters, 2010-02, Vol.31 (2), p.114-116

2010

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"Performance predictions of interconnect networks for advanced technology nodes"

Microelectronic engineering, 2010-03, Vol.87 (issue 3), p.321-323

2010

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Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node

Microelectronic engineering, 2010-03, Vol.87 (3), p.329-332

2010

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Ferroelectric properties of PZT thin films until 40 GHz

Applied physics letters, 2009-02, Vol.94 (5), p.052901-052901-3

2009

Volltextzugriff (PDF)

In situ microwave characterisation of medium-k HfO2 and high-k SrTiO3 dielectrics for metal-insulator-metal capacitors integrated in back-end of line of integrated circuits

IET microwaves, antennas & propagation, 2008-12, Vol.2 (8), p.781-788

2008

Volltextzugriff (PDF)

Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45 nm node

Microelectronic engineering, 2007-11, Vol.84 (11), p.2744-2749

2007

Volltextzugriff (PDF)

DC to Radio-Frequency Characterization of ZrO2 Dielectric for "Metal-Insulator-Metal" Integrated Capacitors

IEEE transactions on components, packaging, and manufacturing technology (2011), 2012-03, Vol.2 (3), p.502-509

2012

Volltextzugriff (PDF)

Wide band frequency and in situ characterisation of high permittivity insulators (High- K) for H.F. integrated passives

Microelectronic engineering, 2006-11, Vol.83 (11), p.2184-2188

2006

Volltextzugriff (PDF)

"Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking"

Microelectronic engineering, 2011-05, Vol.88 (5), p.729-733

2011

Volltextzugriff (PDF)

Wideband frequency and in situ characterization of aluminum nitride (AlN) in a metal/insulator/metal (MIM) configuration

Microelectronic engineering, 2011-05, Vol.88 (5), p.564-568

2011

Volltextzugriff (PDF)

Wideband frequency and in situ characterization of ultra thin ZrO 2 and HfO 2 films for integrated MIM capacitors

Microelectronic engineering, 2010, Vol.87 (3), p.301-305

2010

Volltextzugriff (PDF)

Quality factor and frequency bandwidth of 2D self-inductors in 3D integration stacks

Microelectronic engineering, 2011-05, Vol.88 (5), p.734-738

2011

Volltextzugriff (PDF)

Impact of dummies on interconnects network HF propagation performances for the 65 nm node

Microelectronic engineering, 2006-11, Vol.83 (11), p.2292-2296

2006

Volltextzugriff (PDF)

"Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node"

Microelectronic engineering, 2010-03, Vol.87 (issue 3), p.329-332

2010

Volltextzugriff (PDF)

Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32nm node

Microelectronic engineering, 2010-03, Vol.87 (3), p.329-332

2010

Volltextzugriff (PDF)

Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45nm node

Microelectronic engineering, 2007-11, Vol.84 (11), p.2744-2749

2007

Volltextzugriff (PDF)

Impact of process parameters on circuit performance for the 32nm technology node

Microelectronic engineering, 2007-11, Vol.84 (11), p.2738-2743

2007

Volltextzugriff (PDF)

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Wideband frequency and in situ characterization of ultra thin ZrO2 and HfO2 films for integrated MIM capacitors

Intercomparison of permittivity measurement techniques for ferroelectric thin layers

RF characterization of the substrate coupling noise between TSV and active devices in 3D integrated circuits

Ferroelectric properties of Pb ( Zr , Ti ) O 3 thin films until 40 GHz

RF characterization and modelling of high density Through Silicon Vias for 3D chip stacking

Ferroelectric properties of Pb(Zr,Ti)O3 thin films until 40 GHz

Performance predictions of interconnect networks for advanced technology nodes

Characterization and modeling of RF substrate coupling effects in 3D integrated circuit stacking

Frequency Effect on Voltage Linearity of ZrO2-Based RF Metal-Insulator-Metal Capacitors

"Performance predictions of interconnect networks for advanced technology nodes"

Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node

Ferroelectric properties of PZT thin films until 40 GHz

In situ microwave characterisation of medium-k HfO2 and high-k SrTiO3 dielectrics for metal-insulator-metal capacitors integrated in back-end of line of integrated circuits

Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45 nm node

DC to Radio-Frequency Characterization of ZrO2 Dielectric for "Metal-Insulator-Metal" Integrated Capacitors

Wide band frequency and in situ characterisation of high permittivity insulators (High- K) for H.F. integrated passives

"Characterization and Modelling of Substrate Coupling Effects in 3D Integrated Circuit Stacking"

Wideband frequency and in situ characterization of aluminum nitride (AlN) in a metal/insulator/metal (MIM) configuration

Wideband frequency and in situ characterization of ultra thin ZrO 2 and HfO 2 films for integrated MIM capacitors

Quality factor and frequency bandwidth of 2D self-inductors in 3D integration stacks

Impact of dummies on interconnects network HF propagation performances for the 65 nm node

"Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32 nm node"

Microwave characterization of porous SiOCH permittivity after integration dedicated to the 32nm node

Impact of porous SiOCH on propagation performance measured for narrow interconnects of the 45nm node

Impact of process parameters on circuit performance for the 32nm technology node

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