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Film thickness constraints for manufacturable strained silicon CMOS

Semiconductor science and technology, 2004-01, Vol.19 (1), p.L4-L8

2004

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Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping

Journal of crystal growth, 2009-05, Vol.311 (11), p.3133-3137

2009

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Fully depleted n-MOSFETs on supercritical thickness strained SOI

IEEE electron device letters, 2004-02, Vol.25 (2), p.83-85

2004

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Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

Applied physics letters, 2008-12, Vol.93 (24)

2008

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A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques

Journal of applied physics, 2009-11, Vol.106 (9), p.093524-093524-7

2009

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Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping

Journal of the Electrochemical Society, 2009, Vol.156 (7), p.H574

2009

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Strained Si on insulator technology: from materials to devices

Solid-state electronics, 2004-08, Vol.48 (8), p.1357-1367

2004

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RF power LDMOSFET on SOI

IEEE electron device letters, 2001-03, Vol.22 (3), p.139-141

2001

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Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs

2004 IEEE International Reliability Physics Symposium. Proceedings, 2004, p.493-497

2004

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A metal/polysilicon damascene gate technology for RF power LDMOSFETs

IEEE electron device letters, 2003-11, Vol.24 (11), p.698-700

2003

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(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS

ECS transactions, 2010, Vol.33 (6), p.963-976

2010

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Detailed Simulation Study of a Reverse Embedded-SiGe Strained-Silicon MOSFET

IEEE transactions on electron devices, 2008-02, Vol.55 (2), p.640-648

2008

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Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping

ECS transactions, 2009-03, Vol.18 (1), p.887-894

2009

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Fabrication of Low-Defectivity, Compressively Strained Ge on Si[sub 0.2]Ge[sub 0.8] Structures Using Aspect Ratio Trapping

Journal of the Electrochemical Society, 2009, Vol.156 (4), p.H249

2009

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Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI

IEEE transactions on electron devices, 2006-07, Vol.53 (7), p.1705-1711

2006

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Chemical Mechanical Polishing of Epitaxial Germanium on SiO 2 -patterned Si(001) Substrates

ECS transactions, 2009, Vol.16 (10), p.237-248

2009

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Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

Electrochemical and solid-state letters, 2009, Vol.12 (4), p.H142

2009

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Atomic-layer-deposited Al 2 O 3 / GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

Applied physics letters, 2008-12, Vol.93 (24), p.242106-242106-3

2008

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Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping

Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 2008-09, Vol.26 (5), p.1740-1744

2008

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RF power performance of an LDMOSFET on high-resistivity SOI

IEEE electron device letters, 2005-01, Vol.26 (1), p.29-31

2005

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RF power performance of an LDMOSFET on high-resistivity SOI

IEEE electron device letters, 2005-01, Vol.26 (1), p.29-31

2005

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Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications

2009 Device Research Conference, 2009, p.69-70

2009

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Strain Degradation in Strained-Si Layers Far Thicker than the Critical Thickness Grown on Relaxed Si 0.65 Ge 0.35 Layers

ECS transactions, 2006-10, Vol.3 (7), p.411-420

2006

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DC and RF characterization of fully depleted strained SOI MOSFETs

2004 IEEE International SOI Conference (IEEE Cat. No.04CH37573), 2004, p.86-88

2004

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A RF power LDMOS device on SOI

1999 IEEE International SOI Conference. Proceedings (Cat. No.99CH36345), 1999, p.96-97

1999

Volltextzugriff (PDF)

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Film thickness constraints for manufacturable strained silicon CMOS

Growth and characterization of GaAs layers on polished Ge/Si by selective aspect ratio trapping

Fully depleted n-MOSFETs on supercritical thickness strained SOI

Atomic-layer-deposited Al2O3/GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

A complex x-ray structure characterization of Ge thin film heterostructures integrated on Si(001) by aspect ratio trapping and epitaxial lateral overgrowth selective chemical vapor deposition techniques

Monolithic Integration of GaAs/InGaAs Lasers on Virtual Ge Substrates via Aspect-Ratio Trapping

Strained Si on insulator technology: from materials to devices

RF power LDMOSFET on SOI

Investigation of misfit dislocation leakage in supercritical strained silicon MOSFETs

A metal/polysilicon damascene gate technology for RF power LDMOSFETs

(Invited) Aspect Ratio Trapping: A Unique Technology for Integrating Ge and III-Vs with Silicon CMOS

Detailed Simulation Study of a Reverse Embedded-SiGe Strained-Silicon MOSFET

Thin Film InP Epitaxy on Si (001) Using Selective Aspect Ratio Trapping

Fabrication of Low-Defectivity, Compressively Strained Ge on Si[sub 0.2]Ge[sub 0.8] Structures Using Aspect Ratio Trapping

Impact of substrate-surface potential on the performance of RF power LDMOSFETs on high-resistivity SOI

Chemical Mechanical Polishing of Epitaxial Germanium on SiO 2 -patterned Si(001) Substrates

Low-Defect-Density Ge Epitaxy on Si(001) Using Aspect Ratio Trapping and Epitaxial Lateral Overgrowth

Atomic-layer-deposited Al 2 O 3 / GaAs metal-oxide-semiconductor field-effect transistor on Si substrate using aspect ratio trapping technique

Comparison of selective Ge growth in SiO2 trenches on Si(001) and on blanket Si(001) substrates: Surface roughness and doping

RF power performance of an LDMOSFET on high-resistivity SOI

RF power performance of an LDMOSFET on high-resistivity SOI

Indium gallium arsenide on silicon interband tunnel diodes for NDR-based memory and steep subthreshold slope transistor applications

Strain Degradation in Strained-Si Layers Far Thicker than the Critical Thickness Grown on Relaxed Si 0.65 Ge 0.35 Layers

DC and RF characterization of fully depleted strained SOI MOSFETs

A RF power LDMOS device on SOI

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