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Interaction between aberrations and mask 3D effects for low-n and Ta-based absorbers in extreme ultraviolet lithography

Journal of Micro/Nanopatterning, Materials, and Metrology, 2023-04, Vol.22 (2)

2023

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Investigation into a prototype extreme ultraviolet low-n attenuated phase-shift mask

Journal of Micro/Nanopatterning, Materials, and Metrology, 2021-04, Vol.20 (2)

2021

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Mask-absorber optimization: the next phase

Journal of micro/nanolithography, MEMS, and MOEMS, 2020-04, Vol.19 (2), p.1

2020

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Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technology

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2012-03, Vol.30 (2)

2012

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Lithography assisted self-assembly of contact holes on 300-mm wafer scale

Journal of micro/nanolithography, MEMS, and MOEMS, 2012-07, Vol.11 (3), p.31304

Wuister, Sander F.

2012

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Progress in Extending Immersion Lithography for the 32 nm Node and Beyond

Japanese Journal of Applied Physics, 2009-06, Vol.48 (6S), p.6

2009

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Proximity Effects Correction for Advanced Optical Lithography Processes

Japanese Journal of Applied Physics, 1998-06, Vol.37 (6R), p.3585

1998

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Illumination pupil optimization in 0.33-NA extreme ultraviolet lithography by intensity balancing for semi-isolated dark field two-bar M1 building blocks

Journal of micro/nanolithography, MEMS, and MOEMS, 2016-10, Vol.15 (4), p.43508

2016

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Mask absorber optimization for enhanced microlithography

SPIE newsroom, 2015-06

2015

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Manufacturing Challenges in Double Patterning Lithography

2006 IEEE International Symposium on Semiconductor Manufacturing, 2006, p.283-286

2006

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Mitigation of mask three-dimensional induced phase effects by absorber optimization in ArF i and extreme ultraviolet lithography

Journal of micro/nanolithography, MEMS, and MOEMS, 2016-05, Vol.15 (2), p.21408

2016

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Illumination optimization of periodic patterns for maximum process window

Microelectronic engineering, 2002-07, Vol.61, p.57-64

2002

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Double patterning lithography for 32 nm : critical dimensions uniformity and overlay control considerations

Journal of micro/nanolithography, MEMS, and MOEMS, 2009-01, Vol.8 (1), p.11002

Dusa, Mircea

2009

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Imaging characteristics and specification of mask mean-to-target and mask uniformity according to polarization status

Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 2005-11, Vol.23 (6), p.2875-2878

2005

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Fundamental study of placement errors in directed self-assembly

Journal of micro/nanolithography, MEMS, and MOEMS, 2014-07, Vol.13 (3), p.33005

2014

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Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity

Journal of micro/nanolithography, MEMS, and MOEMS, 2011-10, Vol.10 (4), p.43003

Finders, Jo

2011

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Image placement error: closing the gap between overlay and imaging

Journal of micro/nanolithography, MEMS, and MOEMS, 2005-07, Vol.4 (3), p.33006

Colina, Alberto

2005

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A method for evaluating

Solid state technology, 2001-09, Vol.44 (9), p.52

2001

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Optimizing i-line lithography for 0.3-μm poly-gate manufacturing

Solid state technology, 1997-03, Vol.40 (3), p.S5-S14

1997

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Interaction between aberrations and mask 3D effects for low-n and Ta-based absorbers in extreme ultraviolet lithography

Investigation into a prototype extreme ultraviolet low-n attenuated phase-shift mask

Mask-absorber optimization: the next phase

Wafer level critical dimension control in spacer-defined double patterning for sub-72 nm pitch logic technology

Lithography assisted self-assembly of contact holes on 300-mm wafer scale

Progress in Extending Immersion Lithography for the 32 nm Node and Beyond

Proximity Effects Correction for Advanced Optical Lithography Processes

Illumination pupil optimization in 0.33-NA extreme ultraviolet lithography by intensity balancing for semi-isolated dark field two-bar M1 building blocks

Mask absorber optimization for enhanced microlithography

Manufacturing Challenges in Double Patterning Lithography

Mitigation of mask three-dimensional induced phase effects by absorber optimization in ArF i and extreme ultraviolet lithography

Illumination optimization of periodic patterns for maximum process window

Double patterning lithography for 32 nm : critical dimensions uniformity and overlay control considerations

Imaging characteristics and specification of mask mean-to-target and mask uniformity according to polarization status

Fundamental study of placement errors in directed self-assembly

Toward 22 nm: fast and effective intrafield monitoring and optimization of process windows and critical dimension uniformity

Image placement error: closing the gap between overlay and imaging

A method for evaluating

Optimizing i-line lithography for 0.3-μm poly-gate manufacturing

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