UB Paderborn / Katalog / Suche / in CDI

Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Nano letters, 2014-02, Vol.14 (2), p.960-966

2014

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Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy

Nanotechnology, 2013-01, Vol.24 (1), p.015601-015601

2013

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Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

Applied physics letters, 2013-12, Vol.103 (23)

2013

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Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert

Journal of applied physics, 2017-12, Vol.122 (24)

2017

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In situ electronic probing of semiconducting nanowires in an electron microscope

Journal of microscopy (Oxford), 2016-05, Vol.262 (2), p.183-188

2016

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Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires

Nanotechnology, 2016-11, Vol.27 (44), p.445711-445711

2016

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The effects of Sb concentration variation on the optical properties of GaAsSb GaAs heterostructured nanowires

Semiconductor science and technology, 2013-11, Vol.28 (11), p.115004

2013

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Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

Applied physics letters, 2009-03, Vol.94 (13), p.133105-133105-3

2009

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Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

Journal of applied physics, 2014-10, Vol.116 (14)

2014

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Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy

Nanotechnology, 2009-10, Vol.20 (41), p.415701-415701

2009

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Zinc blende GaAsSb nanowires grown by molecular beam epitaxy

Nanotechnology, 2008-07, Vol.19 (27), p.275605-275605 (4)

2008

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Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

Journal of crystal growth, 2009-03, Vol.311 (7), p.1847-1850

2009

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InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Journal of crystal growth, 2011-05, Vol.323 (1), p.223-227

2011

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Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy

Applied physics letters, 2010-02, Vol.96 (6), p.061913-061913-3

2010

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Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

Journal of crystal growth, 2013-09, Vol.378, p.532-536

2013

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Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision

Journal of physics. Conference series, 2017-09, Vol.902 (1), p.12020

2017

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Publisher's Note: “Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires” [J. Appl. Phys. 116 , 144303 (2014)]

Journal of applied physics, 2014-12, Vol.116 (23)

2014

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Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires

Nanotechnology, 2011-08, Vol.22 (32), p.325707-1-9

2011

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Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb

Journal of crystal growth, 2009-03, Vol.311 (7), p.1688-1691

2009

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In-situ electrical and structural characterization of individual GaAs nanowires

Journal of physics. Conference series, 2014-01, Vol.522 (1), p.12080-4

2014

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Positioning effects on quantum dot solar cells grown by molecular beam epitaxy

Applied physics letters, 2010-02, Vol.96 (8)

2010

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Radial composition variations in the shells of GaAs AlGaAs core-shell nanowires

Journal of physics. Conference series, 2015-10, Vol.644 (1), p.12007

2015

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Modelling the spectral emission of multi-section quantum dot superluminescent light-emitting diodes

Semiconductor science and technology, 2012-06, Vol.27 (6), p.65011

2012

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In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(111):H and GaAs(001) and corrosion of Cu3Au(111)

Surface science, 2004-12, Vol.573 (1), p.67-79

2004

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Semiconductor quantum-wires and nano-wires for optoelectronic applications

Journal of materials science. Materials in electronics, 2009, Vol.20 (Suppl 1), p.94-101

2009

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Position-Controlled Uniform GaAs Nanowires on Silicon using Nanoimprint Lithography

Controlling crystal phases in GaAs nanowires grown by Au-assisted molecular beam epitaxy

Compositional analysis of GaAs/AlGaAs heterostructures using quantitative scanning transmission electron microscopy

Determination of GaAs zinc blende/wurtzite band offsets utilizing GaAs nanowires with an axial GaAsSb insert

In situ electronic probing of semiconducting nanowires in an electron microscope

Effect of V/III ratio on the structural and optical properties of self-catalysed GaAs nanowires

The effects of Sb concentration variation on the optical properties of GaAsSb GaAs heterostructured nanowires

Observation of free exciton photoluminescence emission from single wurtzite GaAs nanowires

Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires

Wurtzite GaAs/AlGaAs core–shell nanowires grown by molecular beam epitaxy

Zinc blende GaAsSb nanowires grown by molecular beam epitaxy

Growth and structural characterization of GaAs/GaAsSb axial heterostructured nanowires

InAs/GaAs quantum dot density variation across a quarter wafer when grown with substrate rotation

Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy

Comparison of Be-doped GaAs nanowires grown by Au- and Ga-assisted molecular beam epitaxy

Evaluating focused ion beam patterning for position-controlled nanowire growth using computer vision

Publisher's Note: “Near-surface depletion of antimony during the growth of GaAsSb and GaAs/GaAsSb nanowires” [J. Appl. Phys. 116 , 144303 (2014)]

Correlated micro-photoluminescence and electron microscopy studies of the same individual heterostructured semiconductor nanowires

Critical thickness of MBE-grown Ga1-xInxSb (x<0.2) on GaSb

In-situ electrical and structural characterization of individual GaAs nanowires

Positioning effects on quantum dot solar cells grown by molecular beam epitaxy

Radial composition variations in the shells of GaAs AlGaAs core-shell nanowires

Modelling the spectral emission of multi-section quantum dot superluminescent light-emitting diodes

In situ X-ray analysis of solid/electrolyte interfaces: electrodeposition of Cu and Co on Si(111):H and GaAs(001) and corrosion of Cu3Au(111)

Semiconductor quantum-wires and nano-wires for optoelectronic applications

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