UB Paderborn / Katalog / Suche / in CDI

Sortiert nach

Einfacher Volltextzugriff von (fast) überall

Installieren Sie die LibKey Nomad-Browsererweiterung und erhalten Sie von vielen Webseiten einfachen Zugriff auf lizenzierte Volltexte oder Open Access Publikationen. Mehr erfahren...

Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress

Journal of applied physics, 2023-02, Vol.133 (7)

2023

Volltextzugriff (PDF)

Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Journal of applied physics, 2020-12, Vol.128 (21)

2020

Volltextzugriff (PDF)

Thermal conductivity of carbon doped GeTe thin films in amorphous and crystalline state measured by modulated photo thermal radiometry

Journal of physics. Conference series, 2016-09, Vol.745 (3), p.32104

2016

Volltextzugriff (PDF)

The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature

Materialia, 2022-03, Vol.21 (101345), p.101345, Article 101345

2022

Volltextzugriff (PDF)

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

Microelectronic engineering, 2005-12, Vol.82 (3-4), p.248-253

2005

Volltextzugriff (PDF)

Transient thermal conductivity in PECVD SiN x at high temperature: The thermal signature of an on-going irreversible modification

Materialia, 2022-12, Vol.26, p.101574, Article 101574

2022

Volltextzugriff (PDF)

Surface diffusion of copper on tantalum substrates by Ostwald ripening

Surface science, 2007-02, Vol.601 (4), p.986-993

2007

Volltextzugriff (PDF)

Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS

Applied surface science, 2008-12, Vol.255 (4), p.1412-1414

2008

Volltextzugriff (PDF)

The effect of Ta interface on the crystallization of amorphous phase change material thin films

Applied physics letters, 2014-06, Vol.104 (22)

2014

Volltextzugriff (PDF)

Growth of RuO2 thin films by liquid injection atomic layer deposition

Thin solid films, 2010-06, Vol.518 (16), p.4701-4704

2010

Volltextzugriff (PDF)

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation

Applied physics letters, 2012-12, Vol.101 (23)

2012

Volltextzugriff (PDF)

Embedding of reduced pressure-chemical vapor deposition grown Ge nanocrystals in a high quality SiO2 matrix for non-volatile memory applications

Thin solid films, 2010-07, Vol.518 (19), p.5382-5386

2010

Volltextzugriff (PDF)

Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering

Journal of crystal growth, 2008-01, Vol.310 (1), p.62-70

2008

Volltextzugriff (PDF)

Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors

Applied physics letters, 2008-01, Vol.92 (2)

2008

Volltextzugriff (PDF)

GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion

Microelectronic engineering, 2011-05, Vol.88 (5), p.817-821

2011

Volltextzugriff (PDF)

Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe

Journal of crystal growth, 2008-05, Vol.310 (10), p.2493-2502

2008

Volltextzugriff (PDF)

Electrical and Chemical Properties of the HfO[sub 2]/SiO[sub 2]/Si Stack: Impact of HfO[sub 2] Thickness and Thermal Budget

Journal of the Electrochemical Society, 2009, Vol.156 (8), p.G120

2009

Volltextzugriff (PDF)

Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Journal of applied physics, 2020-12, Vol.128 (21)

2020

Volltextzugriff (PDF)

Transient thermal conductivity in PECVD SiNx at high temperature: The thermal signature of an on-going irreversible modification

Materialia, 2022-12, Vol.26, Article 101574

2022

Volltextzugriff (PDF)

Investigations of the interface stability in HfO2-metal electrodes

Microelectronic engineering, 2003-11, Vol.70 (2-4), p.384-391

2003

Volltextzugriff (PDF)

Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs

Microelectronic engineering, 2005-06, Vol.80, p.11-14

2005

Volltextzugriff (PDF)

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate

2022 IEEE International Memory Workshop (IMW), 2022, p.1-4

2022

Volltextzugriff (PDF)

Quantification of SiGe layer composition using MCs + and MCs 2 + secondary ions in ToF-SIMS and magnetic SIMS

Applied surface science, 2008-12, Vol.255 (4), p.1412-1414

2008

Volltextzugriff (PDF)

Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films

Microsystem technologies : sensors, actuators, systems integration, 2015-05, Vol.21 (5), p.953-959

2015

Volltextzugriff (PDF)

Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory

2013 IEEE International Electron Devices Meeting, 2013, p.21.5.1-21.5.4

2013

Volltextzugriff (PDF)

1 – 25 von 57

Suche als RSS-Feed

Suchergebnisse filtern

Filter anzeigen

Nur zeigen

Geprüft (Peer-Review)
(40)
Mit Volltextzugriff
(42)

Publikationsform

Artikel
(45)
Tagungsberichte
(12)

Sprache

Englisch
(55)
Französisch
(1)

Erscheinungsjahr

n.n

Zeitschrift / Serie

5 weitere anzeigen...

Weniger anzeigen...

Menü

Weitere Dienste

Einstellungen

Inside the ovonic threshold switching (OTS) device based on GeSbSeN: Structural analysis under electrical and thermal stress

Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Thermal conductivity of carbon doped GeTe thin films in amorphous and crystalline state measured by modulated photo thermal radiometry

The effect of Ge content on structural evolution of Ge-rich GeSbTe alloys at increasing temperature

Investigations of titanium nitride as metal gate material, elaborated by metal organic atomic layer deposition using TDMAT and NH3

Transient thermal conductivity in PECVD SiN x at high temperature: The thermal signature of an on-going irreversible modification

Surface diffusion of copper on tantalum substrates by Ostwald ripening

Quantification of SiGe layer composition using MCs+ and MCs2+ secondary ions in ToF-SIMS and magnetic SIMS

The effect of Ta interface on the crystallization of amorphous phase change material thin films

Growth of RuO2 thin films by liquid injection atomic layer deposition

Crystallization of Ge2Sb2Te5 nanometric phase change material clusters made by gas-phase condensation

Embedding of reduced pressure-chemical vapor deposition grown Ge nanocrystals in a high quality SiO2 matrix for non-volatile memory applications

Growth kinetics and boron doping of very high Ge content SiGe for source/drain engineering

Experimental study of the minimum metal gate thickness required to fix the effective work function in metal-oxide-semiconductor capacitors

GeTe phase change material and Ti based electrode: Study of thermal stability and adhesion

Impact of the H2 bake temperature on the structural properties of tensily strained Si layers on SiGe

Electrical and Chemical Properties of the HfO[sub 2]/SiO[sub 2]/Si Stack: Impact of HfO[sub 2] Thickness and Thermal Budget

Temperature driven structural evolution of Ge-rich GeSbTe alloys and role of N-doping

Transient thermal conductivity in PECVD SiNx at high temperature: The thermal signature of an on-going irreversible modification

Investigations of the interface stability in HfO2-metal electrodes

Influence of TiN metal gate on Si/SiO2 surface roughness in N and PMOSFETs

Multilayer Deposition in Phase-Change Memory for Best Endurance Performance and Reduced Bit Error Rate

Quantification of SiGe layer composition using MCs + and MCs 2 + secondary ions in ToF-SIMS and magnetic SIMS

Direct wafer bonding of amorphous or densified atomic layer deposited alumina thin films

Trade-off between SET and data retention performance thanks to innovative materials for phase-change memory

Suchergebnisse filtern