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Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

Scientific reports, 2019-03, Vol.9 (1), p.3394-3394, Article 3394

2019

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Impact of bismuth incorporation into (Ga,Mn)As thin films on their structural and magnetic properties

17th International Conference on Extended Defects in Semiconductors (EDS),Göttingen, Germany,2014-09-14 - 2014-09-19, 2015-08, Vol.12 (8), p.1152-1155

2015

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Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

Journal of physics. Condensed matter, 2004-01, Vol.16 (2), p.S1-S8

2004

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The Puzzle of the 0.7 Anomaly in Conductance of Quantum Point Contact Reexamined

Acta physica Polonica, A, 2013-11, Vol.124 (5), p.841-842

Figielski, T.

2013

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Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctions

Journal of physics. Condensed matter, 2000-12, Vol.12 (49), p.10153-10160

2000

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Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs Superlattices

5th International Conference on Physics and Applications of Spin-Related Phenomena in Semiconductors,Foz do Iguacu, Brazil,2008-08-03 - 2008-08-06, 2010, Vol.23 (1), p.83-86

2010

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Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers

Journal of alloys and compounds, 2006-10, Vol.423 (1), p.248-251

2006

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Quantum-Interference Semiconductor Devices Revisited

Acta physica Polonica, A, 2001-06, Vol.99 (6), p.699-708

Figielski, T.

2001

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Magneto-conductance through submicron constriction in ferromagnetic (Ga,Mn)As film

Journal of alloys and compounds, 2006-10, Vol.423 (1), p.252-255

2006

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Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures

Physica. B, Condensed matter, 2001-12, Vol.308, p.757-760

2001

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Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures

Physica. E, Low-dimensional systems & nanostructures, 2003-04, Vol.17, p.561-563

2003

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Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer

Physica status solidi. A, Applications and materials science, 2007-02, Vol.204 (2), p.472-476

2007

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Electrostatic Aharonov–Bohm effect in solids revised

Journal of applied physics, 1999-02, Vol.85 (3), p.1984-1986

1999

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Dislocations as electrically active centres in semiconductors—half a century from the discovery

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.12665-12672

Figielski, Tadeusz

2002

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Possibility of electrostatic control of magnetic moments in ferromagnetic semiconductors

Physica. E, Low-dimensional systems & nanostructures, 2001-02, Vol.9 (2), p.295-299

2001

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Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures

Applied physics letters, 1995-08, Vol.67 (8), p.1131-1133

1995

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Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

Journal of superconductivity and novel magnetism, 2017-03, Vol.30 (3), p.825-829

2017

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Capture kinetics at dislocation-related deep levels in III-V heterostructures

European physical journal. Applied physics, 2004-07, Vol.27 (1-3), p.201-205

2004

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Quantum effects associated with misfit dislocations in GaAs-based heterostructures

Materials science & engineering. B, Solid-state materials for advanced technology, 2002-04, Vol.91, p.367-370

2002

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Mesoscopic Conductance Oscillations Associated with Dislocations in Semiconductors

Physica status solidi. B. Basic research, 2000-11, Vol.222 (1), p.151-158

2000

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Metallic and non-metallic longitudinal conductance of grain boundaries in bicrystalline and polycrystalline germanium doped with mercury and antimony

Journal of physics. Condensed matter, 2002-12, Vol.14 (48), p.13111-13117

2002

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Mechanism for the creation of antisite defects, during combined climb-glide motion of dislocations in sphalerite-structure crystals

Applied Physics A Solids and Surfaces, 1985-04, Vol.36 (4), p.217-219

Figielski, T.

1985

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New challenge: extended defects in ferromagnetic semiconductors

Physica status solidi. C, 2005-04, Vol.2 (6), p.1929-1932

2005

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Electron emission from extended defects: DLTS signal in case of dislocation traps

Physica status solidi. A, Applied research, 1990-09, Vol.121 (1), p.187-193

Figielski, T.

1990

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Recombination at dislocations

Solid-state electronics, 1978-11, Vol.21 (11-12), p.1403-1412

Figielski, T.

1978

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Evidence for the homogeneous ferromagnetic phase in (Ga,Mn)(Bi,As) epitaxial layers from muon spin relaxation spectroscopy

Impact of bismuth incorporation into (Ga,Mn)As thin films on their structural and magnetic properties

Misfit strain anisotropy in partially relaxed lattice-mismatched InGaAs/GaAs heterostructures

The Puzzle of the 0.7 Anomaly in Conductance of Quantum Point Contact Reexamined

Deep-level defects at lattice-mismatched interfaces in GaAs-based heterojunctions

Memory Behavior of the Planar Hall Effect in Ferromagnetic (Ga, Mn)As/GaAs Superlattices

Giant planar Hall effect in ferromagnetic (Ga,Mn)As layers

Quantum-Interference Semiconductor Devices Revisited

Magneto-conductance through submicron constriction in ferromagnetic (Ga,Mn)As film

Capture kinetics at deep-level defects in lattice-mismatched GaAs-based heterostructures

Misfit dislocations and surface morphology of lattice-mismatched GaAs/InGaAs heterostructures

Domain-wall contribution to magnetoresistance of a ferromagnetic (Ga,Mn)As layer

Electrostatic Aharonov–Bohm effect in solids revised

Dislocations as electrically active centres in semiconductors—half a century from the discovery

Possibility of electrostatic control of magnetic moments in ferromagnetic semiconductors

Deep levels caused by misfit dislocations in GaAsSb/GaAs heterostructures

Novel Quaternary Dilute Magnetic Semiconductor (Ga,Mn)(Bi,As): Magnetic and Magneto-Transport Investigations

Capture kinetics at dislocation-related deep levels in III-V heterostructures

Quantum effects associated with misfit dislocations in GaAs-based heterostructures

Mesoscopic Conductance Oscillations Associated with Dislocations in Semiconductors

Metallic and non-metallic longitudinal conductance of grain boundaries in bicrystalline and polycrystalline germanium doped with mercury and antimony

Mechanism for the creation of antisite defects, during combined climb-glide motion of dislocations in sphalerite-structure crystals

New challenge: extended defects in ferromagnetic semiconductors

Electron emission from extended defects: DLTS signal in case of dislocation traps

Recombination at dislocations

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