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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

Nano letters, 2017-02, Vol.17 (2), p.1049-1055

2017

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GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

Journal of crystal growth, 2015-10, Vol.427 (C), p.67-71

2015

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Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions

Journal of crystal growth, 2017-04, Vol.464 (C), p.132-137

2017

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Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

Physica status solidi. A, Applications and materials science, 2014-04, Vol.211 (4), p.748-751

2014

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Intrinsic polarization control in rectangular GaN nanowire lasers

Nanoscale, 2016-03, Vol.8 (1), p.5682-5687

2016

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Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

Nanoscale, 2015-06, Vol.7 (21), p.9581-9588

2015

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Gold substrate-induced single-mode lasing of GaN nanowires

Applied physics letters, 2012-11, Vol.101 (22), p.221114

2012

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Gallium Nitride Based Logpile Photonic Crystals

Nano letters, 2011-11, Vol.11 (11), p.4591-4596

2011

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Polarization control in GaN nanowire lasers

Optics express, 2014-08, Vol.22 (16), p.19198-19203

2014

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Observations of gas-phase nanoparticles during InGaN metal-organic chemical vapor deposition

Applied physics letters, 2008-10, Vol.93 (17), p.171906-171906-3

2008

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Annular-Shaped Emission from Gallium Nitride Nanotube Lasers

ACS photonics, 2015-08, Vol.2 (8), p.1025-1029

2015

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Metal-Organic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN

Japanese Journal of Applied Physics, 2000, Vol.39 (4S), p.2372-2375

2000

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Single-mode lasing of GaN nanowire-pairs

Applied physics letters, 2012-09, Vol.101 (11)

2012

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Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres

Applied physics letters, 2009-06, Vol.94 (23)

2009

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Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire

Advanced materials (Weinheim), 2009-06, Vol.21 (23), p.2416-2420

2009

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Polarization switching in GaN nanowire lasers

Applied physics letters, 2013-12, Vol.103 (25)

2013

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Intrinsic polarization control in rectangular GaN nanowire lasers

Nanoscale, 2016-01, Vol.8 (10)

2016

Volltextzugriff (PDF)

Intrinsic polarization control in rectangular GaN nanowire lasers

Nanoscale, 2016-01, Vol.8 (10)

2016

Volltextzugriff (PDF)

Intrinsic polarization control in rectangular GaN nanowire lasers

Nanoscale, 2016-01, Vol.8 (10)

2016

Volltextzugriff (PDF)

GaN epitaxy on Cu(110) by metal organic chemical vapor deposition

Applied physics letters, 2012-05, Vol.100 (19), p.192110-192110-3

2012

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Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs: Fabrication and characterization of axial and radial III-nitride NW LEDs

Physica status solidi. A, Applications and materials science, 2014-02, Vol.211 (4)

2014

Volltextzugriff (PDF)

Gallium Nitride Based Logpile Photonic Crystal

Nano letters, 2011-11, Vol.11 (11)

2011

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Dislocation density reduction in GaN by dislocation filtering througha self-assembled monolayer of silica microspheres

Applied physics letters, 2009-06, Vol.94 (23), p.231105-231105-3

2009

Volltextzugriff (PDF)

Polarization control in GaN nanowire lasers

Optics express, 2014-01, Vol.22 (16)

2014

Volltextzugriff (PDF)

Gold substrate-induced single-mode lasing of GaN nanowires

Applied physics letters, 2012-11, Vol.101 (22)

2012

Volltextzugriff (PDF)

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Nonpolar InGaN/GaN Core–Shell Single Nanowire Lasers

GaN nanowires with pentagon shape cross-section by ammonia-source molecular beam epitaxy

Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions

Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs

Intrinsic polarization control in rectangular GaN nanowire lasers

Continuous and dynamic spectral tuning of single nanowire lasers with subnanometer resolution using hydrostatic pressure

Gold substrate-induced single-mode lasing of GaN nanowires

Gallium Nitride Based Logpile Photonic Crystals

Polarization control in GaN nanowire lasers

Observations of gas-phase nanoparticles during InGaN metal-organic chemical vapor deposition

Annular-Shaped Emission from Gallium Nitride Nanotube Lasers

Metal-Organic Vapor-Phase Epitaxial Growth and Characterization of Quaternary AlGaInN

Single-mode lasing of GaN nanowire-pairs

Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres

Nanowire-Templated Lateral Epitaxial Growth of Low-Dislocation Density Nonpolar a-Plane GaN on r-Plane Sapphire

Polarization switching in GaN nanowire lasers

Intrinsic polarization control in rectangular GaN nanowire lasers

Intrinsic polarization control in rectangular GaN nanowire lasers

Intrinsic polarization control in rectangular GaN nanowire lasers

GaN epitaxy on Cu(110) by metal organic chemical vapor deposition

Top-down fabrication and characterization of axial and radial III-nitride nanowire LEDs: Fabrication and characterization of axial and radial III-nitride NW LEDs

Gallium Nitride Based Logpile Photonic Crystal

Dislocation density reduction in GaN by dislocation filtering througha self-assembled monolayer of silica microspheres

Polarization control in GaN nanowire lasers

Gold substrate-induced single-mode lasing of GaN nanowires

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