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Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

IEEE transactions on electron devices, 2008-01, Vol.55 (1), p.233-244

2008

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IEEE_Xplore

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

IEEE transactions on electron devices, 2021-11, Vol.68 (11), p.5701-5706

2021

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IEEE_Xplore

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

IEEE electron device letters, 2022-11, Vol.43 (11), p.1-1

2022

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IEEE_Xplore

TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

IEEE transactions on electron devices, 2022-02, Vol.69 (2), p.507-513

2022

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Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications

Solar energy materials and solar cells, 2015-03, Vol.134, p.407-416

2015

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Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

2022 IEEE International Reliability Physics Symposium (IRPS), 2022, p.10B.2-1-10B.2-6

2022

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IEEE_Xplore

Numerical simulation and modeling of thermal transient in silicon power devices

Solid-state electronics, 2013-10, Vol.88, p.69-72

2013

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Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

IEEE transactions on electron devices, 2005-12, Vol.52 (12), p.2736-2743

2005

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IEEE_Xplore

An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.802-808

2003

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IEEE_Xplore

Host-pathogen dynamics of squirrelpox virus infection in red squirrels (Sciurus vulgaris)

Veterinary microbiology, 2016-01, Vol.182, p.18-27

2016

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Simulation of self-heating effects in different SOI MOS architectures

Solid-state electronics, 2009-04, Vol.53 (4), p.445-451

2009

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Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

IEEE transactions on electron devices, 2001-12, Vol.48 (12), p.2842-2850

2001

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IEEE_Xplore

Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell

Journal of computational electronics, 2016-03, Vol.15 (1), p.260-268

2016

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Computational efficient RCWA method for simulation of thin film solar cells

Optical and quantum electronics, 2012-06, Vol.44 (3-5), p.149-154

2012

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Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias

IEEE journal of solid-state circuits, 2009-07, Vol.44 (7), p.1959-1967

2009

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IEEE_Xplore

Analysis of gate shot noise in MOSFETs with ultrathin gate oxides

IEEE electron device letters, 2003-02, Vol.24 (2), p.108-110

Fiegna, C.

2003

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IEEE_Xplore

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4829-4835

2019

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IEEE_Xplore

Epidemiological and postmortem findings 262 red squirrels (Sciurus vulgaris) in Scotland, 2005 to 2009

Veterinary record, 2010-08, Vol.167 (8), p.297-302

2010

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An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

Solid-state electronics, 2005-05, Vol.49 (5), p.727-732

2005

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P-GaN Gate HEMTs: a Solution to Improve the High-Temperature Gate Lifetime

IEEE electron device letters, 2024-07, p.1-1

2024

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Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1433-1442

2006

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IEEE_Xplore

Role of the GaN-on-Si Epi-Stack on Δ R ON Caused by Back-Gating Stress

IEEE transactions on electron devices, 2023-10, Vol.70 (10), p.5203-5209

2023

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Role of the GaN-on-Si Epi-Stack on \Delta \textit} Caused by Back-Gating Stress

IEEE transactions on electron devices, 2023-08, p.1-7

2023

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Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations

IEEE transactions on electron devices, 2006-06, Vol.53 (6), p.1443-1451

2006

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IEEE_Xplore

Reduced self-heating by strained silicon substrate engineering

Applied surface science, 2008-07, Vol.254 (19), p.6182-6185

2008

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Analysis of Self-Heating Effects in Ultrathin-Body SOI MOSFETs by Device Simulation

High-Temperature Time-Dependent Gate Breakdown of p-GaN HEMTs

The Role of Frequency and Duty Cycle on the Gate Reliability of p-GaN HEMTs

TCAD Modeling of the Dynamic V TH Hysteresis Under Fast Sweeping Characterization in p-GaN Gate HEMTs

Fabrication, characterization and modeling of a silicon solar cell optimized for concentrated photovoltaic applications

Gate Reliability of p-GaN Power HEMTs Under Pulsed Stress Condition

Numerical simulation and modeling of thermal transient in silicon power devices

Understanding quasi-ballistic transport in nano-MOSFETs: part II-Technology scaling along the ITRS

An experimental study of mobility enhancement in ultrathin SOI transistors operated in double-gate mode

Host-pathogen dynamics of squirrelpox virus infection in red squirrels (Sciurus vulgaris)

Simulation of self-heating effects in different SOI MOS architectures

Low field electron and hole mobility of SOI transistors fabricated on ultrathin silicon films for deep submicrometer technology application

Numerical simulation of the impact of design parameters on the performance of back-contact back-junction solar cell

Computational efficient RCWA method for simulation of thin film solar cells

Noise Reduction in CMOS Circuits Through Switched Gate and Forward Substrate Bias

Analysis of gate shot noise in MOSFETs with ultrathin gate oxides

Gate Reliability of p-GaN HEMT With Gate Metal Retraction

Epidemiological and postmortem findings 262 red squirrels (Sciurus vulgaris) in Scotland, 2005 to 2009

An improved semi-classical Monte-Carlo approach for nano-scale MOSFET simulation

P-GaN Gate HEMTs: a Solution to Improve the High-Temperature Gate Lifetime

Stability of self-consistent Monte Carlo Simulations: effects of the grid size and of the coupling scheme

Role of the GaN-on-Si Epi-Stack on Δ R ON Caused by Back-Gating Stress

Role of the GaN-on-Si Epi-Stack on \Delta \textit} Caused by Back-Gating Stress

Revised stability analysis of the nonlinear Poisson scheme in self-consistent Monte Carlo device simulations

Reduced self-heating by strained silicon substrate engineering

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