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An investigation of the background potential in quantum constrictions using scanning gate microscopy and a swarming algorithm

Physica A, 2023-03, Vol.614, p.128550, Article 128550

2023

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A Wigner function-based quantum ensemble Monte Carlo study of a resonant tunneling diode

IEEE transactions on electron devices, 2003-03, Vol.50 (3), p.769-773

2003

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The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

IEEE electron device letters, 2008-04, Vol.29 (4), p.306-308

2008

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Physical scales in the Wigner–Boltzmann equation

Annals of physics, 2013-01, Vol.328 (C), p.220-237

2013

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Some Considerations on Nanowires in Nanoelectronics

IEEE transactions on electron devices, 2008-11, Vol.55 (11), p.2820-2826

2008

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Open quantum dots: Physics of the non-Hermitian Hamiltonian

Fortschritte der Physik, 2013-02, Vol.61 (2-3), p.291-304

2013

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A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations

IEEE electron device letters, 1999-09, Vol.20 (9), p.463-465

1999

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Ballistic Transport in InP-Based HEMTs

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.2935-2944

2009

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Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics

IEEE transactions on electron devices, 2000-10, Vol.47 (10), p.1831-1837

2000

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Vorticity and quantum interference in ultra-small SOI MOSFETs

IEEE transactions on nanotechnology, 2005-05, Vol.4 (3), p.355-359

2005

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Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer

IEEE transactions on electron devices, 2002-01, Vol.49 (1), p.125-132

2002

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Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET

IEEE transactions on electron devices, 2002-06, Vol.49 (6), p.1019-1026

2002

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Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

IEEE transactions on electron devices, 2010-01, Vol.57 (1), p.353-360

2010

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Quantum interference in fully depleted tri-gate quantum-wire transistors-the role of inelastic scattering

IEEE transactions on nanotechnology, 2005-09, Vol.4 (5), p.599-604

2005

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Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential

IEEE transactions on nanotechnology, 2003-06, Vol.2 (2), p.110-114

2003

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Kinetic lattice Monte Carlo simulations of silicon and germanium epitaxial growth on the silicon (100) surface

IEEE transactions on nanotechnology, 2005-05, Vol.4 (3), p.345-348

2005

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A new model for including discrete dopant ions into Monte Carlo simulations

IEEE transactions on nanotechnology, 2003-12, Vol.2 (4), p.193-197

2003

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Threshold voltage calculation in ultrathin-film SOI MOSFETs using the effective potential

IEEE transactions on nanotechnology, 2003-09, Vol.2 (3), p.121-125

2003

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Electron–phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure

Physica. E, Low-dimensional systems & nanostructures, 2003-07, Vol.19 (1-2), p.215-220

2003

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Monte Carlo simulation of hole transport in strained Si1 − xGex

Solid-state electronics, 1995-04, Vol.38 (4), p.881-890

1995

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Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors

IEEE transactions on electron devices, 1985-11, Vol.32 (11), p.2431-2437

1985

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Simulation of ultra-small GaAs MESFET using quantum moment equations

IEEE transactions on electron devices, 1992-03, Vol.39 (3), p.473-478

1992

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Kinetic Lattice Monte Carlo Simulations of Ad-Dimer Diffusion on the Silicon (100) Surface

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.497-500

2003

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Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices

Journal of computational electronics, 2003-12, Vol.2 (2-4), p.329-334

2003

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Transport in the surface channel of strained Si on a relaxed Si1−xGex substrate

Solid-state electronics, 1997-06, Vol.41 (6), p.879-885

1997

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An investigation of the background potential in quantum constrictions using scanning gate microscopy and a swarming algorithm

A Wigner function-based quantum ensemble Monte Carlo study of a resonant tunneling diode

The Upper Limit of the Cutoff Frequency in Ultrashort Gate-Length InGaAs/InAlAs HEMTs: A New Definition of Effective Gate Length

Physical scales in the Wigner–Boltzmann equation

Some Considerations on Nanowires in Nanoelectronics

Open quantum dots: Physics of the non-Hermitian Hamiltonian

A novel approach for introducing the electron-electron and electron-impurity interactions in particle-based simulations

Ballistic Transport in InP-Based HEMTs

Ultrasmall MOSFETs: the importance of the full Coulomb interaction on device characteristics

Vorticity and quantum interference in ultra-small SOI MOSFETs

Study of a 50 nm nMOSFET by ensemble Monte Carlo simulation including a new approach to surface roughness and impurity scattering in the Si inversion layer

Impact of strong quantum confinement on the performance of a highly asymmetric device structure: Monte Carlo particle-based simulation of a focused-ion-beam MOSFET

Effects of Threading Dislocations on AlGaN/GaN High-Electron Mobility Transistors

Quantum interference in fully depleted tri-gate quantum-wire transistors-the role of inelastic scattering

Implementation of surface roughness scattering in Monte Carlo modeling of thin SOI MOSFETs using the effective potential

Kinetic lattice Monte Carlo simulations of silicon and germanium epitaxial growth on the silicon (100) surface

A new model for including discrete dopant ions into Monte Carlo simulations

Threshold voltage calculation in ultrathin-film SOI MOSFETs using the effective potential

Electron–phonon interaction studies in an In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well structure

Monte Carlo simulation of hole transport in strained Si1 − xGex

Degeneracy in the ensemble Monte Carlo method for high-field transport in semiconductors

Simulation of ultra-small GaAs MESFET using quantum moment equations

Kinetic Lattice Monte Carlo Simulations of Ad-Dimer Diffusion on the Silicon (100) Surface

Modeling Fully Depleted SOI MOSFETs in 3D Using Recursive Scattering Matrices

Transport in the surface channel of strained Si on a relaxed Si1−xGex substrate

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