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Polarimetry of light scattered by surface roughness and textured films and periodic structures in nanotechnologies: a new challenge in instrumentation and modeling

EPJ Web of conferences, 2010-01, Vol.5, p.4001

2010

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Observation of HfO2 thin films by deep UV spectroscopic ellipsometry

Journal of non-crystalline solids, 2007-04, Vol.353 (5-7), p.658-662

2007

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Physical surface adsorption and Molecular Surface Fractal Analysis (MFSA) detected with Spectroscopic Ellipsometry

Applied surface science, 2009-11, Vol.256 (3), p.S96-S100

2009

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Analysis of textured films and periodic grating structures with Mueller matrices: A new challenge in instrumentation with the generation of angle-resolved SE polarimeters

Thin solid films, 2011-02, Vol.519 (9), p.2608-2612

2011

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Refined model for spectroscopic ellipsometry analysis of SixGe1−x/Si strained heterostructures

Applied physics letters, 2000-04, Vol.76 (15), p.2023-2025

Ferrieu, F.

2000

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Observation of a leaky wave guide resonance mode in polycrystalline silicon structures using infrared spectroscopic ellipsometry

Applied physics letters, 1998-10, Vol.73 (16), p.2316-2318

Ferrieu, F.

1998

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Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: Some applications in thin‐film characterization

Review of scientific instruments, 1989-10, Vol.60 (10), p.3212-3216

Ferrieu, F.

1989

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Growth mechanism investigation of SnO2 thin films deposited by aerosol pyrolysis for biosensor applications: Importance of the thickness

Thin solid films, 2012-03, Vol.520 (11), p.3878-3883

2012

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Spectroscopic ellipsometry of SixGe1-x/Si : a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

Thin solid films, 2000-09, Vol.373 (1-2), p.211-215

2000

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Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5–5 eV range

Solid state communications, 1992-10, Vol.84 (3), p.293-296

1992

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Optical characterization by spectroscopic ellipsometry of polycrystalline Si1-xGex of variable Ge composition up to 100% Ge

Thin solid films, 1998-03, Vol.315 (1-2), p.316-321

1998

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In situ spectroscopic ellipsometry of porous silicon layers annealed under ultrahigh vacuum

Applied physics letters, 1994-09, Vol.65 (12), p.1566-1568

1994

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Spectroscopic ellipsometry of optical transitions in thin strained Si1− xGex films

Solid state communications, 1992-05, Vol.82 (6), p.427-430

1992

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Real-time ultraviolet ellipsometry monitoring of gate patterning in a high-density plasma

Journal of vacuum science & technology. A, Vacuum, surfaces, and films, 1997-05, Vol.15 (3), p.865-870

1997

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Nondestructive characterization of silicon-on-insulator structures using infrared spectroscopic ellipsometry

Journal of applied physics, 1990-12, Vol.68 (11), p.5810-5813

1990

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Observation of HfO sub(2) thin films by deep UV spectroscopic ellipsometry

Journal of non-crystalline solids, 2007-04, Vol.353 (5-7), p.658-662

2007

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Observation of HfO 2 thin films by deep UV spectroscopic ellipsometry

Journal of non-crystalline solids, 2007, Vol.353 (5), p.658-662

2007

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Observation of HfO2 thin films by deep UV spectroscopic ellipsometry

Journal of non-crystalline solids, 2007, p.Issue: 5-7 (2007) 658-662

2007

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Spectroscopic Ellipsometry for the Characterization of Thin Films

Journal of the Electrochemical Society, 1990-07, Vol.137 (7), p.2203-2208

1990

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Growth and in situ ellipsometric analysis of Si1-xGex alloys deposited by chemical beam epitaxy

Journal of electronic materials, 1994-06, Vol.23 (6), p.565-568

1994

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Temperature evolutions in silicon induced by a scanned cw laser, pulsed laser, or an electron beam

Journal of applied physics, 1983-05, Vol.54 (5), p.2646-2649

1983

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Characterization of thin films and materials used in semiconductor technology by spectroscopic ellipsometry

Thin solid films, 1988-10, Vol.164, p.43-50

1988

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Spectroscopic ellipsometry of Si sub(x)Ge sub(1-x)/Si: A tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

Thin solid films, 2000-09, Vol.373 (1-2), p.211-215

2000

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Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry

Journal of applied physics, 1987-10, Vol.62 (8), p.3458-3461

1987

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Spectroscopic ellipsometry of Si xGe 1− x/Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

Thin solid films, 2000, Vol.373 (1), p.211-215

2000

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Polarimetry of light scattered by surface roughness and textured films and periodic structures in nanotechnologies: a new challenge in instrumentation and modeling

Observation of HfO2 thin films by deep UV spectroscopic ellipsometry

Physical surface adsorption and Molecular Surface Fractal Analysis (MFSA) detected with Spectroscopic Ellipsometry

Analysis of textured films and periodic grating structures with Mueller matrices: A new challenge in instrumentation with the generation of angle-resolved SE polarimeters

Refined model for spectroscopic ellipsometry analysis of SixGe1−x/Si strained heterostructures

Observation of a leaky wave guide resonance mode in polycrystalline silicon structures using infrared spectroscopic ellipsometry

Infrared spectroscopic ellipsometry using a Fourier transform infrared spectrometer: Some applications in thin‐film characterization

Growth mechanism investigation of SnO2 thin films deposited by aerosol pyrolysis for biosensor applications: Importance of the thickness

Spectroscopic ellipsometry of SixGe1-x/Si : a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

Optical characterisation of porous silicon layers by spectrometric ellipsometry in the 1.5–5 eV range

Optical characterization by spectroscopic ellipsometry of polycrystalline Si1-xGex of variable Ge composition up to 100% Ge

In situ spectroscopic ellipsometry of porous silicon layers annealed under ultrahigh vacuum

Spectroscopic ellipsometry of optical transitions in thin strained Si1− xGex films

Real-time ultraviolet ellipsometry monitoring of gate patterning in a high-density plasma

Nondestructive characterization of silicon-on-insulator structures using infrared spectroscopic ellipsometry

Observation of HfO sub(2) thin films by deep UV spectroscopic ellipsometry

Observation of HfO 2 thin films by deep UV spectroscopic ellipsometry

Observation of HfO2 thin films by deep UV spectroscopic ellipsometry

Spectroscopic Ellipsometry for the Characterization of Thin Films

Growth and in situ ellipsometric analysis of Si1-xGex alloys deposited by chemical beam epitaxy

Temperature evolutions in silicon induced by a scanned cw laser, pulsed laser, or an electron beam

Characterization of thin films and materials used in semiconductor technology by spectroscopic ellipsometry

Spectroscopic ellipsometry of Si sub(x)Ge sub(1-x)/Si: A tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

Characterization of the silicon-on-insulator material formed by high-dose oxygen implantation using spectroscopic ellipsometry

Spectroscopic ellipsometry of Si xGe 1− x/Si: a tool for composition and profile analysis in strained heterostructures used in the microelectronics industry

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