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New Developments in Semiconductor Physics: Proceedings of the International Summer School Held in Szeged, Hungary July 1–6, 1979

1980

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Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

Semiconductor science and technology, 2020-05, Vol.35 (5), p.54001

2020

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New Developments in Semiconductor Physics: Proceedings of the Third Summer School Held at Szeged, Hungary August 31 – September 4, 1987

1988

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Direct Self-Injurious Behavior (D-SIB) and Life Events among Vocational School and High School Students

International journal of environmental research and public health, 2018-05, Vol.15 (6), p.1068

2018

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Reducing the free-space group velocity of single photons by transverse structuring

2015 Conference on Lasers and Electro-Optics (CLEO), 2015, p.1-2

2015

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IEEE_Xplore

Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon

Journal of applied physics, 1988, Vol.63 (1), p.183-189

1988

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Degradation induced formation of extended defects in GaP:N LED's

IEEE transactions on electron devices, 1981-04, Vol.28 (4), p.421-424

Ferenczi, G.

1981

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IEEE_Xplore

Nitrogen related deep electron trap in GaP

Journal of applied physics, 1983-01, Vol.54 (7), p.3902-3912

1983

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Frequency and temperature dependence of the small signal capacitance of reverse biased if GaP/Zn,O/p-n junctions

Solid-state electronics, 1974-01, Vol.17 (9), p.897-902

Ferenczi, G.

1974

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Spectroscopy of impurity levels by measuring the microplasma turn on probabilities in GaP/Zn,O/diodes

Solid-state electronics, 1974-01, Vol.17 (9), p.903-911

Ferenczi, G.

1974

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Dispersive microwave transient spectroscopy of deep levels in semiconductors

Materials science & engineering. B, Solid-state materials for advanced technology, 1989-10, Vol.4 (1), p.489-492

1989

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Reliability of LED’s; Are the accelerated ageing tests reliable?

Acta physica Academiae Scientiarum Hungaricae, 1981-07, Vol.51 (4), p.437-440

Ferenczi, G.

1981

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Isothermal frequency scan DLTS

Physica status solidi. A, Applied research, 1986-04, Vol.94 (2), p.K119-K124

1986

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Extended defects in III-V semiconductor compounds

Kristall und Technik, 1981, Vol.16 (2), p.203-208

1981

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Identification of a deep electron trap in GaP:N

Physica B + C, 1983-02, Vol.116 (1-3), p.436-443

1983

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Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps

Materials science forum, 1991-01, Vol.38-41, p.803-808

1991

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Mechanical stress induced defect creation in GaP

Defect Complexes in Semiconductor Structures, 1983, p.301-307

1983

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Deep level studies on traps showing non-exponential kinetics in GaAsP and GaP

Acta physica Academiae Scientiarum Hungaricae, 1981-07, Vol.51 (4), p.449-457

1981

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Interpretation of the electric field dependent thermal emission data of deep traps

New Developments in Semiconductor Physics, 2005, p.211-215

2005

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Isothermal frequency scan DLTS

Physica status solidi. A, Applied research, 1986-04, Vol.94 (2), p.K119-K124

1986

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Surface corrosion as an apparent cause of degradation of GaP : N LED’s

Acta physica Academiae Scientiarum Hungaricae, 1981-07, Vol.51 (4), p.417-422

1981

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Remarks on space-charge spectroscopy; An analysis on the temperature dependence of the junction capacitance

Acta physica Academiae Scientiarum Hungaricae, 1978-01, Vol.44 (1), p.103-109

1978

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Injection level spectroscopy : a novel non-contact contamination analysis technique in silicon

Japanese Journal of Applied Physics, 1991, Vol.30 (12B), p.3630-3633

1991

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Transient Microwave Absorption Spectroscopy - Experimental Verification

Materials science forum, 1991-01, Vol.38-41, p.1277-1282

1991

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New developments in semiconductor physics: proceedings/3rd. Summer school of the Semiconductor Branch of the Hungarian Physical Society, Szeged, Hungary, August 31-September 4, 1987

Lecture notes in physics, 1988, Vol.301

1988

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New Developments in Semiconductor Physics: Proceedings of the International Summer School Held in Szeged, Hungary July 1–6, 1979

Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope

New Developments in Semiconductor Physics: Proceedings of the Third Summer School Held at Szeged, Hungary August 31 – September 4, 1987

Direct Self-Injurious Behavior (D-SIB) and Life Events among Vocational School and High School Students

Reducing the free-space group velocity of single photons by transverse structuring

Correlation of the concentration of the carbon-associated radiation damage levels with the total carbon concentration in silicon

Degradation induced formation of extended defects in GaP:N LED's

Nitrogen related deep electron trap in GaP

Frequency and temperature dependence of the small signal capacitance of reverse biased if GaP/Zn,O/p-n junctions

Spectroscopy of impurity levels by measuring the microplasma turn on probabilities in GaP/Zn,O/diodes

Dispersive microwave transient spectroscopy of deep levels in semiconductors

Reliability of LED’s; Are the accelerated ageing tests reliable?

Isothermal frequency scan DLTS

Extended defects in III-V semiconductor compounds

Identification of a deep electron trap in GaP:N

Interpretation of the Electric Field Dependent Thermal Emission Data of Deep Traps

Mechanical stress induced defect creation in GaP

Deep level studies on traps showing non-exponential kinetics in GaAsP and GaP

Interpretation of the electric field dependent thermal emission data of deep traps

Isothermal frequency scan DLTS

Surface corrosion as an apparent cause of degradation of GaP : N LED’s

Remarks on space-charge spectroscopy; An analysis on the temperature dependence of the junction capacitance

Injection level spectroscopy : a novel non-contact contamination analysis technique in silicon

Transient Microwave Absorption Spectroscopy - Experimental Verification

New developments in semiconductor physics: proceedings/3rd. Summer school of the Semiconductor Branch of the Hungarian Physical Society, Szeged, Hungary, August 31-September 4, 1987

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