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Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Solid-state electronics, 2011-11, Vol.65-66, p.33-37

2011

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Transport spectroscopy of a single dopant in a gated silicon nanowire

Physical review letters, 2006-11, Vol.97 (20), p.206805-206805, Article 206805

2006

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Junctionless nanowire transistor (JNT): Properties and design guidelines

2010 Proceedings of the European Solid State Device Research Conference, 2010, p.357-360

2010

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Random telegraph-signal noise in junctionless transistors

Applied physics letters, 2011-02, Vol.98 (9), p.092111-092111-3

2011

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Junctionless 6T SRAM cell

Electronics letters, 2010-10, Vol.46 (22), p.1491-1493

2010

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Impact ionization induced dynamic floating body effect in junctionless transistors

Solid-state electronics, 2013-12, Vol.90, p.28-33

2013

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Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

Applied physics letters, 2007-02, Vol.90 (7)

2007

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Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks

IEEE electron device letters, 2008-12, Vol.29 (12), p.1360-1363

2008

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Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

Applied physics letters, 2011-08, Vol.99 (7), p.073502-073502-3

2011

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Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)

IEEE transactions on electron devices, 2008-12, Vol.55 (12), p.3414-3420

2008

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Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter?

IEEE transactions on electron devices, 2009-12, Vol.56 (12), p.3009-3017

2009

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High-Temperature Performance of Silicon Junctionless MOSFETs

IEEE transactions on electron devices, 2010-03, Vol.57 (3), p.620-625

2010

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Multi-gate devices for the 32 nm technology node and beyond

Solid-state electronics, 2008-09, Vol.52 (9), p.1291-1296

2008

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Junctionless Multiple-Gate Transistors for Analog Applications

IEEE transactions on electron devices, 2011-08, Vol.58 (8), p.2511-2519

2011

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On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON gate stacks

IEEE electron device letters, 2006-05, Vol.27 (5), p.332-334

2006

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Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

IEEE transactions on electron devices, 2012-12, Vol.59 (12), p.3510-3518

2012

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Reduction of the anomalous VT behavior in MOSFETs with high- κ/metal gate stacks

Microelectronic engineering, 2007-09, Vol.84 (9), p.1882-1885

2007

Volltextzugriff (PDF)

Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Solid-state electronics, 2009-07, Vol.53 (7), p.760-766

2009

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Performance assessment of (1 1 0) p-FET high- κ/MG: is it mobility or series resistance limited?

Microelectronic engineering, 2007-09, Vol.84 (9), p.2058-2062

2007

Volltextzugriff (PDF)

Analog operation of junctionless transistors at cryogenic temperatures

2010 IEEE International SOI Conference (SOI), 2010, p.1-2

2010

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Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN

Microelectronic engineering, 2007-09, Vol.84 (9-10), p.1878-1881

2007

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Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection

Microelectronic engineering, 2007-09, Vol.84 (9), p.1943-1946

2007

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Low temperature exfoliation process in hydrogen-implanted germanium layers

Journal of applied physics, 2010-03, Vol.107 (5), p.054315-054315-5

2010

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On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO/sub 2/ and poly-Si/TiN/HfSiON gate stacks

IEEE electron device letters, 2006-05, Vol.27 (5), p.332-334

2006

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Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs

2008 Symposium on VLSI Technology, 2008, p.14-15

2008

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Junctionless Nanowire Transistor (JNT): Properties and design guidelines

Transport spectroscopy of a single dopant in a gated silicon nanowire

Junctionless nanowire transistor (JNT): Properties and design guidelines

Random telegraph-signal noise in junctionless transistors

Junctionless 6T SRAM cell

Impact ionization induced dynamic floating body effect in junctionless transistors

Subthreshold channels at the edges of nanoscale triple-gate silicon transistors

Dominant Layer for Stress-Induced Positive Charges in Hf-Based Gate Stacks

Field-effect mobility extraction in nanowire field-effect transistors by combination of transfer characteristics and random telegraph noise measurements

Mobility and Dielectric Quality of 1-nm EOT HfSiON on Si(110) and (100)

Velocity and Mobility Investigation in 1-nm-EOT HfSiON on Si (110) and (100)-Does the Dielectric Quality Matter?

High-Temperature Performance of Silicon Junctionless MOSFETs

Multi-gate devices for the 32 nm technology node and beyond

Junctionless Multiple-Gate Transistors for Analog Applications

On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO2 and poly-Si/TiN/HfSiON gate stacks

Surface-Potential-Based Drain Current Analytical Model for Triple-Gate Junctionless Nanowire Transistors

Reduction of the anomalous VT behavior in MOSFETs with high- κ/metal gate stacks

Performance improvement in narrow MuGFETs by gate work function and source/drain implant engineering

Performance assessment of (1 1 0) p-FET high- κ/MG: is it mobility or series resistance limited?

Analog operation of junctionless transistors at cryogenic temperatures

Mobility extraction using RFCV for 80nm MOSFET with 1nm EOT HfSiON/TiN

Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection

Low temperature exfoliation process in hydrogen-implanted germanium layers

On the impact of TiN film thickness variations on the effective work function of poly-Si/TiN/SiO/sub 2/ and poly-Si/TiN/HfSiON gate stacks

Flexible and robust capping-metal gate integration technology enabling multiple-VT CMOS in MuGFETs

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