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Controlled synthesis of branched SnO2 nanowhiskers

Materials letters, 2005-06, Vol.59 (13), p.1670-1672

2005

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Hydrogen storage performance of Ti–V-based BCC phase alloys with various Fe content

Journal of alloys and compounds, 2005-05, Vol.393 (1), p.128-134

2005

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Whale Optimization Algorithm for Multiconstraint Second-Order Stochastic Dominance Portfolio Optimization

Computational intelligence and neuroscience, 2020, Vol.2020 (2020), p.1-19

2020

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Study on elemental features of Longquan celadon at Fengdongyan kiln site in Yuan and Ming Dynasties by EDXRF

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2012-12, Vol.292, p.25-29

2012

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Study on the property of the production for Fengdongyan kiln in Early Ming dynasty by INAA and EDXRF

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2016-08, Vol.381, p.52-57

2016

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Manifestation of the structural stability of Mg-doped Zn4Sb3 via atomic fine structure investigation

Solid state communications, 2017-08, Vol.261, p.26-31

2017

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Influence of Fe addition on hydrogen storage characteristics of Ti–V-based alloy

International journal of hydrogen energy, 2006-08, Vol.31 (9), p.1176-1181

2006

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Growth and characterization of Ta/Ti bi-layer films on glass and Si (111) substrates by direct current magnetron sputtering

Applied surface science, 2012-07, Vol.258 (19), p.7314-7321

2012

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Effects of Enzymatic Hydrolysis of Protein on the Pasting Properties of Different Types of Wheat Flour

Journal of food science, 2012-05, Vol.77 (5), p.C546-C550

2012

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InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy

Journal of crystal growth, 2010-11, Vol.312 (23), p.3451-3454

2010

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Thermally induced phase separation of Si–Sb–Te alloy

Journal of non-crystalline solids, 2010-04, Vol.356 (18), p.884-888

2010

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Quantum dot lasers grown by gas source molecular-beam epitaxy

Journal of crystal growth, 2011-05, Vol.323 (1), p.450-453

2011

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Switching reliability improvement of phase change memory with nanoscale damascene structure by Ge2Sb2Te5 CMP process

Electronics letters, 2008, Vol.44 (4), p.322-323

2008

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InAs/InP(100) quantum dot laser with high wavelength stability

Electronics letters, 2010, Vol.46 (2), p.158-159

2010

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Study on the provenance and elemental distribution in the glaze of Tang Sancai by proton microprobe

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2005-04, Vol.231 (1-4), p.553-556

2005

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Controlled synthesis of branched SnO 2 nanowhiskers

Materials letters, 2005, Vol.59 (13), p.1670-1672

2005

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PIXE study on ancient pottery from Chinese Shanghai area

Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 2006-08, Vol.249 (1-2), p.601-603

2006

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Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution

Journal of crystal growth, 2000-02, Vol.209 (4), p.630-636

2000

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Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 μm

Journal of crystal growth, 2005, Vol.274 (1), p.78-84

2005

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TEM investigation of hydrogen-implanted and annealed single-crystal SrTiO3

Current Applied Physics, 2006, 6(3), , pp.583-586

2006

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Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

Journal of crystal growth, 2000, Vol.208 (1), p.107-112

2000

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TEM investigation of hydrogen-implanted and annealed single-crystal SrTiO3

Current applied physics, 2006-06, Vol.6 (3), p.583-586

2006

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Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers

Solid state communications, 2004-11, Vol.132 (6), p.421-424

2004

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Effect of In xGa 1− xAs (0⩽ x⩽0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands

Journal of crystal growth, 2001, Vol.223 (3), p.363-368

2001

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1.35μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition

Journal of crystal growth, 2000-11, Vol.220 (1-2), p.16-22

2000

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Controlled synthesis of branched SnO2 nanowhiskers

Hydrogen storage performance of Ti–V-based BCC phase alloys with various Fe content

Whale Optimization Algorithm for Multiconstraint Second-Order Stochastic Dominance Portfolio Optimization

Study on elemental features of Longquan celadon at Fengdongyan kiln site in Yuan and Ming Dynasties by EDXRF

Study on the property of the production for Fengdongyan kiln in Early Ming dynasty by INAA and EDXRF

Manifestation of the structural stability of Mg-doped Zn4Sb3 via atomic fine structure investigation

Influence of Fe addition on hydrogen storage characteristics of Ti–V-based alloy

Growth and characterization of Ta/Ti bi-layer films on glass and Si (111) substrates by direct current magnetron sputtering

Effects of Enzymatic Hydrolysis of Protein on the Pasting Properties of Different Types of Wheat Flour

InAs/GaAs quantum dot lasers grown by gas-source molecular-beam epitaxy

Thermally induced phase separation of Si–Sb–Te alloy

Quantum dot lasers grown by gas source molecular-beam epitaxy

Switching reliability improvement of phase change memory with nanoscale damascene structure by Ge2Sb2Te5 CMP process

InAs/InP(100) quantum dot laser with high wavelength stability

Study on the provenance and elemental distribution in the glaze of Tang Sancai by proton microprobe

Controlled synthesis of branched SnO 2 nanowhiskers

PIXE study on ancient pottery from Chinese Shanghai area

Temperature dependence of the optical properties of InAs/GaAs self-organized quantum dots with bimodal size distribution

Structural and optical properties of InAs/GaAs quantum dots emitting at 1.5 μm

TEM investigation of hydrogen-implanted and annealed single-crystal SrTiO3

Electronic characteristics of InAs/GaAs self-assembled quantum dots by deep level transient spectroscopy

TEM investigation of hydrogen-implanted and annealed single-crystal SrTiO3

Optical characteristics of InAs quantum dots capped with short period GaAs/InAs superlattices and InGaAs combination layers

Effect of In xGa 1− xAs (0⩽ x⩽0.4) capping layer on self-assembled 1.3 μm wavelength InAs/GaAs quantum islands

1.35μm photoluminescence from In0.5Ga0.5As/GaAs islands grown by molecular beam epitaxy via cycled (InAs)1/(GaAs)1 monolayer deposition

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