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Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition

Thin solid films, 2004-12, Vol.469 (Complete), p.178-183

2004

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Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper

Thin solid films, 2000-12, Vol.377, p.592-596

2000

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Cognitive training to improve memory in individuals undergoing electroconvulsive therapy: Negative findings

Journal of psychiatric research, 2017-09, Vol.92, p.8-14

2017

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Application of high temperature deposited aluminum gate electrode to the fabrication of a-SI:H TFT

Surface & coatings technology, 1998-10, Vol.108 (1-3), p.588-593

1998

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A Randomized Controlled Study of the Use of Video Double Lumen Endobronchial Tubes versus Double Lumen Endobronchial Tubes in Thoracic Surgery

Journal of cardiothoracic and vascular anesthesia, 2018-02, Vol.32 (1), p.267-274

2018

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Dosimetric advantages of intensity-modulated proton therapy for oropharyngeal cancer compared with intensity-modulated radiation: A case-matched control analysis

Medical dosimetry : official journal of the American Association of Medical Dosimetrists, 2016, Vol.41 (3), p.189-194

2016

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Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

Materials chemistry and physics, 1996-02, Vol.43 (2), p.166-172

1996

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Lack of association between angiotensin-converting enzyme inhibitors and angiotensin receptor blockers and pain improvement in patients with oral cancer

Ecancermedicalscience, 2020-10, Vol.14, p.1121-1121

2020

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Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing

Materials chemistry and physics, 1999-10, Vol.61 (2), p.169-171

1999

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Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

Thin solid films, 2004-01, Vol.447, p.681-687

2004

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Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization

Materials chemistry and physics, 2004-01, Vol.83 (1), p.150-157

2004

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The Use of Saline-Linked Radiofrequency Dissecting Sealer for Liver Transection in Patients With Cirrhosis

The Journal of surgical research, 2008-09, Vol.149 (1), p.110-114

2008

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Study the impact of liner thickness on the 0.18 μm devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric

Thin solid films, 2000-12, Vol.377 (1-2), p.776-780

2000

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Growth of MgWO 4 phosphor by RF magnetron sputtering

Materials chemistry and physics, 1998, Vol.53 (2), p.172-178

1998

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Radiative recombination mechanisms of GaAs 1− xP x

Materials chemistry and physics, 1991, Vol.30 (2), p.139-142

1991

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Growth of MgWO4 phosphor by RF magnetron sputtering

Materials chemistry and physics, 1998-05, Vol.53 (2), p.172-178

1998

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Characterization of GaN epitaxial layers on SiC substrates with Al xGa 1− xN buffer layers

Materials science & engineering. B, Solid-state materials for advanced technology, 1997, Vol.50 (1), p.25-28

1997

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Reactive ion etching of GaN with BCl3/SF6 plasmas

Materials chemistry and physics, 1996-07, Vol.45 (1), p.80-83

1996

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Reactive ion etching of GaN with BCl 3/SF 6 plasmas

Materials chemistry and physics, 1996, Vol.45 (1), p.80-83

1996

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Improved ozone-tetraethoxysilane oxide reliability for deep submicron inter-metal dielectric applications by deposition of a silane-based oxide underlayer

Thin solid films, 1997-10, Vol.308, p.621-626

1997

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Organofluorosilicate Glass (OFSG): A Dense Low K Dielectric with Superior Materials Properties

MRS proceedings, 2003, Vol.766, Article E7.3

2003

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Bandgap shrinkage of degenerate p-type GaAs by photoluminescence spectroscopy

Materials chemistry and physics, 1995-11, Vol.42 (2), p.143-147

1995

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Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers

Materials science & engineering. B, Solid-state materials for advanced technology, 1997-12, Vol.50 (1-3), p.25-28

1997

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Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures

Materials chemistry and physics, 1996-05, Vol.44 (2), p.182-185

1996

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Radiative recombination mechanisms of GaAs1-xPx

Materials chemistry and physics, 1991-12, Vol.30 (2), p.139-142

1991

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Effect of carrier gas on the structure and electrical properties of low dielectric constant SiCOH film using trimethylsilane prepared by plasma enhanced chemical vapor deposition

Palladium seeding on the tantalum-insulated silicon oxide film by plasma immersion ion implantation for the growth of electroless Copper

Cognitive training to improve memory in individuals undergoing electroconvulsive therapy: Negative findings

Application of high temperature deposited aluminum gate electrode to the fabrication of a-SI:H TFT

A Randomized Controlled Study of the Use of Video Double Lumen Endobronchial Tubes versus Double Lumen Endobronchial Tubes in Thoracic Surgery

Dosimetric advantages of intensity-modulated proton therapy for oropharyngeal cancer compared with intensity-modulated radiation: A case-matched control analysis

Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

Lack of association between angiotensin-converting enzyme inhibitors and angiotensin receptor blockers and pain improvement in patients with oral cancer

Nitric acid-based slurry with citric acid as an inhibitor for copper chemical mechanical polishing

Moisture resistance and thermal stability of fluorine-incorporation siloxane-based low-dielectric-constant material

Integration of a stack of two fluorine doped silicon oxide film with ULSI interconnect metallization

The Use of Saline-Linked Radiofrequency Dissecting Sealer for Liver Transection in Patients With Cirrhosis

Study the impact of liner thickness on the 0.18 μm devices using low dielectric constant hydrogen silsesquioxane as the interlayer dielectric

Growth of MgWO 4 phosphor by RF magnetron sputtering

Radiative recombination mechanisms of GaAs 1− xP x

Growth of MgWO4 phosphor by RF magnetron sputtering

Characterization of GaN epitaxial layers on SiC substrates with Al xGa 1− xN buffer layers

Reactive ion etching of GaN with BCl3/SF6 plasmas

Reactive ion etching of GaN with BCl 3/SF 6 plasmas

Improved ozone-tetraethoxysilane oxide reliability for deep submicron inter-metal dielectric applications by deposition of a silane-based oxide underlayer

Organofluorosilicate Glass (OFSG): A Dense Low K Dielectric with Superior Materials Properties

Bandgap shrinkage of degenerate p-type GaAs by photoluminescence spectroscopy

Characterization of GaN epitaxial layers on SiC substrates with AlxGa1-xN buffer layers

Electrical properties of amorphous silicon films with different thicknesses in metal/insulator/semiconductor structures

Radiative recombination mechanisms of GaAs1-xPx

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