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High-quality superconducting α-Ta film sputtered on the heated silicon substrate

Scientific reports, 2023-08, Vol.13 (1), p.12810-12810, Article 12810

2023

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Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2

Nano letters, 2018-07, Vol.18 (7), p.4493-4499

2018

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Charge modulation and structural transformation in TaTe2 studied by scanning tunneling microscopy/spectroscopy

Applied physics letters, 2016-07, Vol.109 (2)

2016

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Fabrication of Al/AlOx/Al junctions with high uniformity and stability on sapphire substrates

Scientific reports, 2023-07, Vol.13 (1), p.11874-11874, Article 11874

2023

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Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy

Scientific reports, 2019-11, Vol.9 (1), p.16969-7, Article 16969

2019

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Reconstructions on SrTiO3(111) surface tuned by Ti/Sr deposition

Surface science, 2013-08, Vol.614, p.38-45

2013

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Tunable superconductivity of epitaxial TiN films through oxygen doping

AIP advances, 2020-05, Vol.10 (5), p.055113-055113-6

2020

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Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering

AIP advances, 2021-10, Vol.11 (10), p.105107-105107-6

2021

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Harmonic balance simulation of the influence of component uniformity and reliability on the performance of a Josephson traveling wave parametric amplifier

Chinese physics B, 2024-03, Vol.33 (4), p.40401

2024

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Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES

APL materials, 2019-05, Vol.7 (5), p.051105-051105-8

2019

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Growth of SrTiO3(110) film by oxide molecular beam epitaxy with feedback control

AIP advances, 2012-12, Vol.2 (4), p.041407-041407-10

2012

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Stable Adsorption of Single Gold Atoms on the SrTiO 3 (111)-(9 × 9) Reconstructed Surface

Journal of physical chemistry. C, 2019-02, Vol.123 (8), p.4866-4870

2019

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Stable Adsorption of Single Gold Atoms on the SrTiO3(111)-(9 × 9) Reconstructed Surface

Journal of physical chemistry. C, 2019-02, Vol.123 (8), p.4866-4870

2019

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High-suppression-ratio and wide bandwidth four-stage Purcell filter for multiplexed superconducting qubit readout

Journal of applied physics, 2024-01, Vol.135 (2)

2024

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Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2024-03, Vol.42 (2)

2024

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Scaling superconducting quantum chip with highly integratable quantum building blocks

Superconductor science & technology, 2023-08, Vol.36 (8), p.85001

2023

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Investigation of the deposition of α-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit

Journal of vacuum science and technology. B, Nanotechnology & microelectronics, 2023-09, Vol.41 (5)

2023

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Epitaxial α-Ta (110) film on a-plane sapphire substrate for superconducting qubits on wafer scale

Japanese Journal of Applied Physics, 2023-10, Vol.62 (10), p.100901

2023

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Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (4), p.n/a

2021

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Growth of Metal Phthalocyanine on Deactivated Semiconducting Surfaces Steered by Selective Orbital Coupling

Physical review letters, 2015-08, Vol.115 (9), p.096101-096101, Article 096101

2015

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The effect of annealing on the Sn-doped (−201) β-Ga2O3 bulk

Materials science in semiconductor processing, 2022-08, Vol.147, p.106752, Article 106752

2022

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Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Scientific reports, 2015-06, Vol.5 (1), p.10310-10310, Article 10310

2015

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Bandgap Tailoring of Monoclinic Single‐Phase β‐(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2O3/Al2O3 Heterojunction at High Temperatures

Physica status solidi. A, Applications and materials science, 2021-05, Vol.218 (10), p.n/a

2021

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Investigation of β‐Ga 2 O 3 Film Growth Mechanism on c ‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Physica status solidi. A, Applications and materials science, 2021-02, Vol.218 (4)

2021

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Fabrication of Al/AlO x /Al junctions with high uniformity and stability on sapphire substrates

Scientific reports, 2023-07, Vol.13 (1), p.11874

2023

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High-quality superconducting α-Ta film sputtered on the heated silicon substrate

Electronic Structure and Enhanced Charge-Density Wave Order of Monolayer VSe2

Charge modulation and structural transformation in TaTe2 studied by scanning tunneling microscopy/spectroscopy

Fabrication of Al/AlOx/Al junctions with high uniformity and stability on sapphire substrates

Precise determination of surface band bending in Ga-polar n-GaN films by angular dependent X-Ray photoemission spectroscopy

Reconstructions on SrTiO3(111) surface tuned by Ti/Sr deposition

Tunable superconductivity of epitaxial TiN films through oxygen doping

Coherent epitaxy of trilayer nickelate (Nd0.8Sr0.2)4Ni3O10 films by high-pressure magnetron sputtering

Harmonic balance simulation of the influence of component uniformity and reliability on the performance of a Josephson traveling wave parametric amplifier

Visualizing Dirac nodal-line band structure of topological semimetal ZrGeSe by ARPES

Growth of SrTiO3(110) film by oxide molecular beam epitaxy with feedback control

Stable Adsorption of Single Gold Atoms on the SrTiO 3 (111)-(9 × 9) Reconstructed Surface

Stable Adsorption of Single Gold Atoms on the SrTiO3(111)-(9 × 9) Reconstructed Surface

High-suppression-ratio and wide bandwidth four-stage Purcell filter for multiplexed superconducting qubit readout

Stable and low loss oxide layer on α-Ta (110) film for superconducting qubits

Scaling superconducting quantum chip with highly integratable quantum building blocks

Investigation of the deposition of α-tantalum (110) films on a-plane sapphire substrate by molecular beam epitaxy for superconducting circuit

Epitaxial α-Ta (110) film on a-plane sapphire substrate for superconducting qubits on wafer scale

Investigation of β‐Ga2O3 Film Growth Mechanism on c‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Growth of Metal Phthalocyanine on Deactivated Semiconducting Surfaces Steered by Selective Orbital Coupling

The effect of annealing on the Sn-doped (−201) β-Ga2O3 bulk

Interfacial Coupling and Electronic Structure of Two-Dimensional Silicon Grown on the Ag(111) Surface at High Temperature

Bandgap Tailoring of Monoclinic Single‐Phase β‐(AlxGa1−x)2O3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga2O3/Al2O3 Heterojunction at High Temperatures

Investigation of β‐Ga 2 O 3 Film Growth Mechanism on c ‐Plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Fabrication of Al/AlO x /Al junctions with high uniformity and stability on sapphire substrates

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