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Room temperature polariton lasing in a GaN ∕ AlGaN multiple quantum well microcavity

Applied physics letters, 2008-08, Vol.93 (5), p.051102-051102-3

2008

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Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

Physical review. B, Condensed matter and materials physics, 2010-03, Vol.81 (12), Article 125305

2010

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Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Applied physics letters, 2001-11, Vol.79 (20), p.3230-3232

2001

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Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Physical review. B, Condensed matter and materials physics, 2013-10, Vol.88 (16), Article 165312

2013

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Biexcitonic molecules survive excitons at the Mott transition

Nature communications, 2014-10, Vol.5 (1), Article 5251

2014

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High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Applied physics letters, 2009-11, Vol.95 (19), p.191102-191102-3

2009

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Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

IEEE transactions on electron devices, 2019-11, Vol.66 (11), p.4811-4816

2019

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IEEE_Xplore

High-speed and low-noise AlInN/GaN HEMTs on SiC

Physica status solidi. A, Applications and materials science, 2011-02, Vol.208 (2), p.429-433

2011

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Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

International journal of microwave and wireless technologies, 2010-02, Vol.2 (1), p.13-20

2010

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205-GHz (Al,In)N/GaN HEMTs

IEEE electron device letters, 2010-09, Vol.31 (9), p.957-959

2010

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IEEE_Xplore

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Electronics (Basel), 2020-06, Vol.9 (6), p.991

2020

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Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

Journal of the Society for Information Display, 2021-01, Vol.29 (1), p.3-16

2021

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Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

Journal of electronic materials, 2016-01, Vol.45 (1), p.682-687

2016

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Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO2 or HfO2

IEEE transactions on electron devices, 2008-03, Vol.55 (3), p.937-941

2008

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Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy

Japanese Journal of Applied Physics, 2001-01, Vol.40 (7B), p.L738-L740

2001

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102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

IEEE electron device letters, 2009-08, Vol.30 (8), p.796-798

2009

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IEEE_Xplore

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Journal of applied physics, 2014-06, Vol.115 (23)

2014

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Phase diagram of a polariton laser from cryogenic to room temperature

Physical review. B, Condensed matter and materials physics, 2009-12, Vol.80 (23), Article 233301

2009

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Biexcitonic molecules survive excitons at the Mott transition

Nature communications, 2014-10, Vol.5, p.5251-5251

2014

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Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

IEEE transactions on electron devices, 2010-09, Vol.57, p.2144-2154

2010

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHz

IEEE electron device letters, 2010-04, Vol.31 (4), p.293-295

2010

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Large- k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes

Physical review. B, Condensed matter and materials physics, 2013-02, Vol.87 (7), Article 075202

2013

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Low-Noise Microwave Performance of 0.1 μm Gate AlInN/GaN HEMTs on SiC

IEEE microwave and wireless components letters, 2010-08, Vol.20 (8), p.453-455

2010

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Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements

Physical review. B, Condensed matter and materials physics, 2008-03, Vol.77 (12), Article 125342

2008

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100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F rm T = hbox 144 Unknown character hbox GHz

IEEE electron device letters, 2010-04, Vol.31 (1-4), p.293-295

2010

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Room temperature polariton lasing in a GaN ∕ AlGaN multiple quantum well microcavity

Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory

Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy

Impact of saturation on the polariton renormalization in III-nitride based planar microcavities

Biexcitonic molecules survive excitons at the Mott transition

High reflectivity airgap distributed Bragg reflectors realized by wet etching of AlInN sacrificial layers

Current Spreading Length and Injection Efficiency in ZnO/GaN-Based Light-Emitting Diodes

High-speed and low-noise AlInN/GaN HEMTs on SiC

Exact determination of electrical properties of wurtzite Al1−xInxN/(AlN)/GaN heterostructures (0.07 ≤ x ≤ 0.21) by means of a detailed charge balance equation

205-GHz (Al,In)N/GaN HEMTs

Progress in Violet Light-Emitting Diodes Based on ZnO/GaN Heterojunction

Dimensioning a full color LED microdisplay for augmented reality headset in a very bright environment

Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

Technology and Performance of InAlN/AlN/GaN HEMTs With Gate Insulation and Current Collapse Suppression Using ZrO2 or HfO2

Green InGaN Light-Emitting Diodes Grown on Silicon (111) by Metalorganic Vapor Phase Epitaxy

102-GHz AlInN/GaN HEMTs on Silicon With 2.5-W/mm Output Power at 10 GHz

InGaN/GaN quantum wells for polariton laser diodes: Role of inhomogeneous broadening

Phase diagram of a polariton laser from cryogenic to room temperature

Biexcitonic molecules survive excitons at the Mott transition

Proposal and performance analysis of normally off n++ GaN/InAlN/AlN/GaN HEMTs with 1-nm-thick InAlN barrier

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With FT = 144 GHz

Large- k exciton dynamics in GaN epilayers: Nonthermal and thermal regimes

Low-Noise Microwave Performance of 0.1 μm Gate AlInN/GaN HEMTs on SiC

Biexciton kinetics in GaN quantum wells: Time-resolved and time-integrated photoluminescence measurements

100-nm-Gate (Al,In)N/GaN HEMTs Grown on SiC With F rm T = hbox 144 Unknown character hbox GHz

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